Patent US4759947A successfully refreshed from Google Patents.
US4759947A
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Method for forming deposition film using Si compound and active species from carbon and halogen compound
Assignee: Canon Inc
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Filing: 1985-10-07
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Granted: 1988-07-26
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Expires: 2005-10-07
Abstract
Abstract A method for forming a deposition film comprises introducing, into a film forming chamber for forming a deposition film on a substrate, a silicon compound as a material for film formation and an active species generated from a compound containing carbon and halogen and capable of chemical interaction with said silicon compound, and applying thereto at least an energy selected from optical, thermal and discharge energies to excite said silicon compound and to cause a reaction thereof, thus forming a deposition film on said substrate.
Inventors
- 👤 Shunichi Ishihara
- 👤 Masaaki Hirooka
- 👤 Shigeru Ohno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 14:10
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/24
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
191 words
A method for forming a deposition film comprising introducing, into a film forming chamber for forming a deposition film on a substrate, a substrate, a gaseous or gasified silicon compound as a material for film formation and a gaseous or gasified active species containing carbon and halogen generated by decomposition of a compound containing carbon and halogen and capable of chemical interaction with said silicon compound, and applying to said silicon compound at least an energy selected from the group consisting of optical, thermal and discharge energies to excite said silicon compound and cause a reaction thereof, thus forming a deposition film on said substrate; said compound containing carbon and halogen being selected from the group consisting of linear carbon halides having the formula C u Y 2u+2 , cyclic carbon halides having the formula C u Y 2v , and linear or cyclic compounds having the formula C u H x Y y , wherein u is an integer greater than or equal to 1, Y is F, Cl, Br or I, v is an integer greater than or equal to 3, and x+y is equal to 2u or 2u+2.
Claim 2
Independent Claim
191 words
A method for forming a deposition film comprising introducing, into a film forming chamber for forming a deposition film on a substrate, a substrate, a gaseous or gasified silicon compound as a material for film formation and a gaseous or gasified active species containing carbon and halogen generated by decomposition of a compound containing carbon and halogen and capable of chemical interaction with said silicon compound, and applying to said silicon compound at least an energy selected from the group consisting of optical, thermal and discharge energies to excite said silicon compound and cause a reaction thereof, thus forming a deposition film on said substrate; said compound containing carbon and halogen being selected from the group consisting of linear carbon halides having the formula C u Y 2u+2 , cyclic carbon halides having the formula C u Y 2v , and linear or cyclic compounds having the formula C u H x Y y , wherein u is an integer greater than or equal to 1, Y is F, Cl, Br or I, v is an integer greater than or equal to 3, and x+y is equal to 2u or 2u+2.
Claim 3
Dependent Claim
15 words
A method according to claim 1, wherein said silicon compound is a linear silane compound.
Claim 4
Dependent Claim
15 words
A method according to claim 1, wherein said silicon compound is a cyclic silane compound.
Claim 5
Dependent Claim
18 words
A method according to claim 1, wherein said compound containing carbon and halogen is a linear carbon halide.
Claim 6
Dependent Claim
18 words
A method according to claim 1, wherein said compound containing carbon and halogen is a cyclic carbon halide.
Claim 7
Dependent Claim
22 words
A method according to claim 1, further comprising the use of an active species generated from a compound containing silicon and halogen.
Claim 8
Dependent Claim
34 words
A method according to claim 1, wherein the generation of said active species is conducted by means of at least an exciting energy selected from the group consisting of discharge, thermal and optical energies.
Claim 9
Dependent Claim
34 words
A method according to claim 1, wherein the ratio of said silicon compound and said active species introduced into said chamber is in a range from 10:1 to 1:10 in the introduced flow rates.
Claim 10
Dependent Claim
16 words
A method according to claim 1, which further comprises introducing a compound containing an impurity element.
Claim 11
Dependent Claim
19 words
A method according to claim 9, wherein the impurity element belongs to the group IIIA of the periodic table.
Claim 12
Dependent Claim
19 words
A method according to claim 9, wherein the impurity element belongs to the group VA of the periodic table.
References Cited (Backward Citations)
US3473978A
Cited
US3916034A
Cited
US3825439A
Cited
US4077818A
Cited
US4084024A
Cited
US4220488A
Cited
US4217374A
Cited
US4471042A
Cited
GB2038086A
Cited
US4543267A
Cited
US4461783A
Cited
US4282267A
Cited
US4430185A
Cited
US4448801A
Cited
US4522663A
Cited
JPS5766625A
Cited
US4410559A
Cited
US4468443A
Cited
US4450185A
Cited
US4564997A
Cited
US4402762A
Cited
EP0074212A1
Cited
US4434188A
Cited
US4419381A
Cited
US4468413A
Cited
US4439463A
Cited
US4485125A
Cited
EP0090586A1
Cited
US4466992A
Cited
US4517223A
Cited
US4664937A
Cited
US4504518A
Cited
US4615905A
Cited
US4526805A
Cited
US4521447A
Cited
US4582560A
Cited
US4532199A
Cited
JPS59199035A
Cited
US4554180A
Cited
GB2148328A
Cited
US4569697A
Cited
US4567127A
Cited
US4546008A
Cited
US4564533A
Cited
US4544423A
Cited
US4514437A
Cited
US4657777A
Cited
US4689093A
Cited
US4702934A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-07-26 | 1992-01-25 | 1992-07-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-07-26 | 1996-01-25 | 1996-07-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-07-26 | 2000-01-25 | 2000-07-26 | $7700.00 | Window Closed / Lapsed |