Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
75 words
A method of making an improved photoresponsive amorphous alloy, said method comprising depositing on a substrate a material including at least silicon and incorporating in said material at least one density of states reducing element, said element being fluorine, and introducing at least one band gap adjusting element into said material without substantially increasing the states in the band gap to produce an alloy having a band gap adjusted for a specified photoresponse wavelength threshold.
Claim 2
Independent Claim
75 words
A method of making an improved photoresponsive amorphous alloy, said method comprising depositing on a substrate a material including at least silicon and incorporating in said material at least one density of states reducing element, said element being fluorine, and introducing at least one band gap adjusting element into said material without substantially increasing the states in the band gap to produce an alloy having a band gap adjusted for a specified photoresponse wavelength threshold.
Claim 3
Dependent Claim
13 words
The method as defined in claim 1 wherein said adjusting element is germanium.
Claim 4
Dependent Claim
29 words
The method as defined in claim 1 wherein said alloy is glow discharge deposited from at least a mixture of SiF 4 , H 2 and GeH 4 .
Claim 5
Dependent Claim
18 words
The method as defined in claim 3 wherein said mixture includes up to one percent GeH 4 .
Claim 6
Dependent Claim
27 words
The method as defined in claim 4 wherein said mixture of SiF 4 and H 2 has a ratio of 4 to 1 to 10 to 1.
Claim 7
Dependent Claim
30 words
An amorphous alloy made by the process of claim 4 wherein said mixture of SiF 4 and H 2 has a ratio of 4 to 1 to 10 to 1.
Claim 8
Dependent Claim
21 words
An amorphous alloy made by the process of claim 3 wherein said mixture includes up to one percent GeH 4 .
Claim 9
Dependent Claim
29 words
The method as defined in claim 1 wherein said alloy is deposited with an active photoresponsive region therein and said adjusting element is introduced at least in said region.
Claim 10
Dependent Claim
86 words
The method as defined in claim 1 wherein said method forms one step in a multi-step process for forming successively deposited alloy layers of opposite (p and n) conductivity type, the n-type layer being formed by introducing during the deposition of the layer an n-dopant element which is deposited with the deposited layer to produce an n-type layer and the p-type layer being formed by introducing during deposition of the layer of p-dopant element which is deposited with the deposited layer to produce a p-type layer.
Claim 11
Dependent Claim
44 words
The method as defined in claim 9 wherein there is deposited between said p and n doped layers an intrinsic amorphous alloy layer without a p or n dopant element present therein, at least a portion of said intrinsic layer containing said adjusting element.
Claim 12
Dependent Claim
22 words
The method as defined in claim 1 further including introducing a second density of states reducing element, said second element being hydrogen.
Claim 13
Dependent Claim
29 words
The method as defined in claim 11 wherein both said density of states reducing elements are incorporated into said depositing alloy substantially simultaneously with said band gap adjusting element.
Claim 14
Dependent Claim
19 words
The method as defined in claim 1 wherein said reducing element is incorporated into said alloy after deposition thereof.
Claim 15
Dependent Claim
20 words
The method as defined in claim 1 wherein said adjusting element is introduced into said alloy in substantially discrete layers.
Claim 16
Dependent Claim
19 words
The method as defined in claim 1 wherein said adjusting element is introduced into said alloy in varying amounts.
Claim 17
Dependent Claim
19 words
The method as defined in claim 1 including evaporating said adjusting element prior to introducing it into said alloy.
Claim 18
Dependent Claim
21 words
The method as defined in claim 16 including plasma activating said adjusting element as it is being introduced into said alloy.
Claim 19
Dependent Claim
17 words
The method as defined in claim 17 including activating said adjusting element by plasma activated vapor deposition.
Claim 20
Dependent Claim
20 words
An amorphous alloy made by the process of claim 17 including activating said adjusting element by plasma activated vapor deposition.
Claim 21
Dependent Claim
24 words
An amorphous alloy made by the process of claim 16 including plasma activating said adjusting element as it is being introduced into said alloy.
Claim 22
Dependent Claim
38 words
The method as defined in claim 1 wherein said method includes depositing at least a portion of said alloy with one of a p or n dopant element therein to form a p or n conductivity type alloy.
Claim 23
Dependent Claim
16 words
An amorphous alloy made by the process of claim 1 wherein said adjusting element is germanium.
Claim 24
Dependent Claim
32 words
An amorphous alloy made by the process of claim 1 wherein said alloy is glow discharge deposited from at least a mixture of SiF 4 , H 2 and GeH 4 .
Claim 25
Dependent Claim
22 words
An amorphous alloy made by the process of claim 1 wherein said adjusting element is introduced into said alloy in varying amounts.
Claim 26
Dependent Claim
22 words
An amorphous alloy made by the process of claim 1 including evaporating said adjusting element prior to introducing it into said alloy.