Non-single-crystalline semiconductor layer on a substrate and method of making same

Claim 2

A non-single-crystalline semiconductor layer on a substrate, wherein the non-single-crystalline semiconductor layer has at least a non-single-crystalline compound semiconductor layer, which consists principally of silicon and tin and is expressed by Si x Sn 1-x (0<x<1) and which has a sufficiently smaller energy band gap than a non-single-crystalline semiconductor of silicon so that the layer is sensitive to light of a long wavelength such as infrared rays and where said non-single crystalline compound semiconductor layer also contains hydrogen as a dangling bond neutralizer.

Claim 3

A non-single-crystalline semiconductor layer on a substrate according to claim 1, the non-single-crystalline compound semiconductor layer is doped with an N or P type impurity and has N or P type conductivity.

Claim 4

A non-single-crystalline semiconductor layer on a substrate according to claim 1, the non-single-crystalline compound semiconductor layer is non-doped with N and P type impurity and has I type conductivity.

Claim 5

A non-single-crystalline semiconductor layer manufacturing method which employs a reaction chamber provided with a gas inlet and a gas outlet; wherein a substrate is disposed in the reaction chamber, and a mixture gas containing at least a semiconductor material gas consisting principally of silicon hydride and an additional semiconductor material gas consisting of tin hydroxide or halide is introduced into the reaction chamber through the gas inlet thereof in such a state in which a gas in the reaction chamber is exhausted therefrom through the gas outlet; wherein in the reaction chamber, an ionizing, high-frequency electromagnetic field is applied to the mixture gas to ionize into a mixture gas plasma; wherein the mixture gas plasma is passed into the reaction chamber by discharging the gas in the reaction chamber; and wherein in the reaction chamber, a semiconductor material consisting principally of silicon and tin is deposited on the substrate as a result of the flowing of the mixture gas plasma into the reaction chamber, and in this case, the atmospheric pressure in the reaction chamber is held below 1 atm and the temperature of the substrate is maintained below 700° C. which is lower than the temperature of single-crystallizing the semiconductor material deposited on the substrate, thereby to form on the substrate a non-single-crystalline compound semiconductor layer consisting principally of silicon and tin and expressed by Si x Sn 1-x (0<x<1) and which has a sufficiently smaller energy band gap than a non-single-crystalline semiconductor of silicon so that the layer is sensitive to light of a long wavelength such as infrared rays and where said non-single-crystalline compound semiconductor layer also contains hydrogen as a dangling bond neutralizer.

Claim 6

A non-single-crystalline semiconductor layer manufacturing method which employs a reaction chamber provided with a gas inlet and a gas outlet; wherein a substrate is disposed in the reaction chamber, and a mixture gas containing at least a semiconductor material gas consisting principally of silicon hydride and an additional semiconductor material gas consisting of tin hydroxide or halide is introduced into the reaction chamber through the gas inlet thereof in such a state in which a gas in the reaction chamber is exhausted therefrom through the gas outlet; wherein in the reaction chamber, an ionizing, high-frequency electromagnetic field is applied to the mixture gas to ionize into a mixture gas plasma; wherein the mixture gas plasma is passed into the reaction chamber by discharging the gas in the reaction chamber; and wherein in the reaction chamber, a semiconductor material consisting principally of silicon and tin is deposited on the substrate as a result of the flowing of the mixture gas plasma into the reaction chamber, and in this case, the atmospheric pressure in the reaction chamber is held below 1 atm and the temperature of the substrate is maintained below 700° C. which is lower than the temperature of single-crystallizing the semiconductor material deposited on the substrate, thereby to form on the substrate a non-single-crystalline compound semiconductor layer consisting principally of silicon and tin and expressed by Si x Sn 1-x (0<x<1) and which has a sufficiently smaller energy band gap than a non-single-crystalline semiconductor of silicon so that the layer is sensitive to light of a long wavelength such as infrared rays and where said non-single-crystalline compound semiconductor layer also contains hydrogen as a dangling bond neutralizer.

Claim 7

A non-single-crystalline semiconductor layer manufacturing method according to claim 4, wherein the mixture gas plasma flowing into the semiconductor depositing region of the reaction chamber is orientated and accelerated by a high-frequency or DC electric field towards the substrate.

Claim 8

A non-single-crystalline semiconductor layer manufacturing method according to claim 4, wherein the ionizing, high frequency electromagnetic field is a microwave, electromagnetic field.

Claim 9

A non-single-crystalline semiconductor layer manufcaturing method according to claim 4, wherein the mixture gas contains a compound gas of an impurity imparting an N type conductivity to the non-single-crystalline semiconductor layer, thereby to form the non-single-crystalline semiconductor layer as an N type, non-single-crystalline semiconductor layer.

Claim 10

A non-single-crystalline semiconductor layer manufacturing method according to claim 7, wherein the impurity compound gas is a compound gas of nitrogen, phosphorus, arsenic, antimony or tellurium.

Claim 11

A non-single-crystalline semiconductor layer manufacturing method according to claim 4, wherein the mixture gas contains a compound gas of an impurity imparting a P type conductivity to the non-single-crystalline semiconductor layer, thereby to form the non-single-crystalline semiconductor layer as a P type, non-single-crystalline semiconductor layer.

Claim 12

A non-single-crystalline semiconductor layer manufacturing method according to claim 9, wherein the impurity compound gas is a compound gas of boron, aluminum, gallium or indium.

Claim 13

A non-single-crystalline semiconductor layer manufacturing method according to claim 4, wherein the semiconductor material gas is SiH 4 , SiH 2 Cl 2 or SiHCl 3 .

Claim 14

A non-single-crystalline semiconductor layer manufacturing method according to claim 4, wherein the additional semiconductor material gas is SnCl 2 , SnCl 4 , Sn(OH) 2 or Sn(OH) 4 .