US4439463A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plasma assisted deposition system
Assignee: Atlantic Richfield Co
•
Filing: 1982-02-18
•
Granted: 1984-03-27
•
Expires: 2002-02-18
Abstract
Abstract Process for use in the deposition of a semiconductor film involves: producing a stream of reactive gaseous species within a first chamber, the reactive species containing a substance to be included within the film; passing the reactive species to a work environment distinct from the first chamber; and incorporating the substance from the reactive species into a film deposited within the work environment.
Inventors
- 👤 Stephen C. Miller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 13:31
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/0021; C23C14/22; C23C14/24; C23C14/32; C23C16/00; C23C16/44; C23C16/50; C23C16/517; H; H01; H01J; H01J37/00; H01J37/30; H01J37/305; H01J37/3053; H01J37/32
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
82 words
A process for use in the deposition of a semiconductor film, comprising: producing a stream of reactive gaseous species within a first chamber by exposing a flow of a gaseous material to an electrical discharge, the reactive species containing a semiconductor material; passing the reactive species to a work environment which is distinct from the first chamber and is maintained at substantially atmospheric pressure; and continuously depositing the semiconductor material from the reactive species onto a substrate passed through the work environment.
Claim 2
Dependent Claim
82 words
A process for use in the deposition of a semiconductor film, comprising: producing a stream of reactive gaseous species within a first chamber by exposing a flow of a gaseous material to an electrical discharge, the reactive species containing a semiconductor material; passing the reactive species to a work environment which is distinct from the first chamber and is maintained at substantially atmospheric pressure; and continuously depositing the semiconductor material from the reactive species onto a substrate passed through the work environment.
Claim 3
Dependent Claim
104 words
A process for use in the deposition of a semiconductor film, comprising: producing a stream of reactive gaseous species within a first chamber by exposing a flow of a gaseous material to an electrical discharge, the reactive species containing a substance to be included within a film; producing a flow of a gas past an output opening of the first chamber to aspirate the species from the first chamber and carry them to a work environment distinct from and maintained at a higher pressure than the first chamber; and incorporating the substance from the reactive species into a film deposited within the work environment.
Claim 4
Dependent Claim
104 words
A process for use in the deposition of a semiconductor film, comprising: producing a stream of reactive gaseous species within a first chamber by exposing a flow of a gaseous material to an electrical discharge, the reactive species containing a substance to be included within a film; producing a flow of a gas past an output opening of the first chamber to aspirate the species from the first chamber and carry them to a work environment distinct from and maintained at a higher pressure than the first chamber; and incorporating the substance from the reactive species into a film deposited within the work environment.
References Cited (Backward Citations)
US3961103A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-03-27 | 1987-09-26 | 1988-03-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-03-27 | 1991-09-26 | 1992-03-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-03-27 | 1995-09-26 | 1996-03-27 | $7700.00 | Window Closed / Lapsed |