US4564533A
Expired / Lapsed
US
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Method for depositing silicon carbide non-single crystal semiconductor films
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1985-01-22
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Granted: 1986-01-14
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Expires: 2005-01-22
Abstract
Abstract A method of forming a silicon carbide non-single crystal semiconductor, characterized in that said method comprises the step of: applying electric or light energy to a methylsilane expressed by the formula of SiH4-n(CH3)n (where n=1 to 3) or Si2(CH3)nH6-n (where n=1 to 5) and a silane hydride (of SimH2m+2, where m=1 to 3), thereby forming a silicon carbide non-single crystal semiconductor film layer containing SixC1-x (where 0<x<1) as a major component thereof.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 05:57
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/32; C23C16/325; H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F71/00; H10F71/10; H10F71/103; H10F71/1035; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
90 words
A method of forming a silicon carbide non-single crystal semiconductor, characterized in that said method comprises the step of: applying electric or light energy to a methylsilane expressed by the formula of SiH 4-n (CH 3 ) n (where n=1 to 3) or Si 2 (CH 3 ) n H 6-n (where n=1 to 5) and a silane hydride (of Si m H 2m+2 , where m=1 to 3); thereby forming a silicon carbide non-singe crystal semi-conductor layer containing Si x C 1-x (where 0<x<1) as a major component thereof.
Claim 2
Independent Claim
90 words
A method of forming a silicon carbide non-single crystal semiconductor, characterized in that said method comprises the step of: applying electric or light energy to a methylsilane expressed by the formula of SiH 4-n (CH 3 ) n (where n=1 to 3) or Si 2 (CH 3 ) n H 6-n (where n=1 to 5) and a silane hydride (of Si m H 2m+2 , where m=1 to 3); thereby forming a silicon carbide non-singe crystal semi-conductor layer containing Si x C 1-x (where 0<x<1) as a major component thereof.
Claim 3
Independent Claim
93 words
A method of forming a silicon carbide non-single crystal semiconductor, characterized in that said method comprises the step of: applying electric or light energy to a methylsilane expressed by the formula of SiH 4-n (CH 3 ) n (where n=1 to 3) or Si 2 (CH 3 ) n H 6-n (where n=1 to 5) and a silicon fluoride (of H m SiF n where m=0 to 3 and n=1 to 4); thereby forming a silicon carbide non-singe crystal semi-conductor layer containing Si x C 1-x (where 0<x<1) as a major component thereof.
Claim 4
Independent Claim
93 words
A method of forming a silicon carbide non-single crystal semiconductor, characterized in that said method comprises the step of: applying electric or light energy to a methylsilane expressed by the formula of SiH 4-n (CH 3 ) n (where n=1 to 3) or Si 2 (CH 3 ) n H 6-n (where n=1 to 5) and a silicon fluoride (of H m SiF n where m=0 to 3 and n=1 to 4); thereby forming a silicon carbide non-singe crystal semi-conductor layer containing Si x C 1-x (where 0<x<1) as a major component thereof.
Claim 5
Dependent Claim
33 words
The method of claim 1, comprising adding diborane to said methylsilane and silane hydride to form a p-type silicon carbide non-single crystal semiconductor containing Si x C 1-x as a major component thereof.
Claim 6
Dependent Claim
27 words
The method of claim 2, comprising adding diborane or phosphine to said methylsilane and silicon fluoride to form a p- or n-type silicon carbide non-single crystal semiconductor.
Claim 7
Dependent Claim
35 words
The method of claim 3, comprising forming, on a conductive transparent film on a substrate, a hydrogen-containing p-type non-single crystal semiconductor with C/Si=0.01 to 0.5 and an electro-conductivity higher than 1×10 -6 (Ωcm) -1 .
Claim 8
Dependent Claim
33 words
The method of claim 4, comprising forming a hydrogen- or fluorine-containing p- or n-type silicon carbide non-single crystal semiconductor with S/Si=0.01 to 0.5 and an electro-conductivity higher than 1×10 -6 (Ωcm) -1 .
Claim 9
Dependent Claim
23 words
The method of claim 1 or 2, wherein said methylsilane is SiH 2 (CH 3 ) 2 or SiH 3 CH 3 .
Claim 10
Dependent Claim
18 words
The method of claim 1, wherein said silane hydride is SiH 4 or Si 2 H 6 .
Claim 11
Dependent Claim
18 words
The method of claim 2, wherein said silicon fluoride is SiF 2 or Si 2 F 6 .
Claim 12
Dependent Claim
19 words
The method of claim 1 or 2, wherein said electric energy is applied by plasma CVD using glow discharge.
Claim 13
Dependent Claim
31 words
The method of claim 1 or 2, wherein said light energy is applied by irradiation of an ultraviolet ray of a wavelength smaller than 300 nm or an Excimer laser beam.
Claim 14
Dependent Claim
25 words
A p-type non-single crystal semiconductor produced by the method of claim 3, for use in the manufacture of a photo-voltaic converter having a PIN junction.
Claim 15
Dependent Claim
27 words
A p- or n-type non-single crystal semiconductor produced by the method of claim 4, for use in the manufacture of a photo-voltaic converter having a PIN junction.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-01-13 | 1989-07-15 | 1990-01-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-01-13 | 1993-07-15 | 1994-01-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-01-13 | 1997-07-15 | 1998-01-14 | $7700.00 | Window Closed / Lapsed |