US4546008A
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Method for forming a deposition film
Assignee: Canon Inc
•
Filing: 1984-11-02
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Granted: 1985-10-08
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Expires: 2004-11-02
Abstract
Abstract A method for forming a deposition film comprises applying an excitation energy to a silane compound (SiOA) in a gaseous state having at least one substituent (OA) of the formula of --OC a H b X c where b+c=2a+1, a is a positive integer, b and c are zero or a positive integer, provided that b and c are not simultaneously zero and X is halogen atom to form a deposition film containing silicon atom on a substrate. A method for forming a deposition film comprises applying an excitation energy to a silane compound (SiA) in a gaseous state having 2-6 silicon atoms, having at least one substituent (A) of the formula of --C a H b X c where b+c=2a+1, a is a positive integer, b and c are zero or a positive integer, and X is halogen atom, containing at least one species selected from hydrogen atom and halogen atom, and further at least one of the silicon atoms present at the both ends bonding to only one species selected from hydrogen atom and halogen atom except for bonding to another silicon atom, to form a deposition film containing silicon atom on a substrate.
Inventors
- 👤 Keishi Saitoh
- 👤 Wataru Ando
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 17:55
CPC Classifications
B; B05; B05D; B05D1/00; B05D1/60; B05D1/62; C; C09; C09D; C09D4/00; C23; C23C; C23C16/00; C23C16/22; C23C16/24; G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08278; B05D3/00; B05D3/02; B05D3/06
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
91 words
A method for forming a deposition film on a substrate, which comprises applying an excitation energy to a silane compound (SiOA) in a gaseous state having at least 2 silicon atoms and at least one substituent (OA) of the formula of --OC a H b X c , where b+c=2a+1, a is a positive integer, b and c are zero or a positive integer, provided that b and c are not simultaneously zero, and x is a halogen atom, to form a deposition film compound containing silicon atoms on the substrate.
Claim 2
Independent Claim
91 words
A method for forming a deposition film on a substrate, which comprises applying an excitation energy to a silane compound (SiOA) in a gaseous state having at least 2 silicon atoms and at least one substituent (OA) of the formula of --OC a H b X c , where b+c=2a+1, a is a positive integer, b and c are zero or a positive integer, provided that b and c are not simultaneously zero, and x is a halogen atom, to form a deposition film compound containing silicon atoms on the substrate.
Claim 3
Dependent Claim
14 words
The method according to claim 1 in which the substituent (OA) is unsubstituted alkoxyl.
Claim 4
Dependent Claim
15 words
The method according to claim 2 in which the unsubstituted alkoxyl has 1-10 carbon atoms.
Claim 5
Dependent Claim
17 words
The method according to claim 1 in which the silane compound has 2 to 6 silicon atoms.
Claim 6
Dependent Claim
19 words
The method according to claim 1 in which X is at least one member selected from F and Cl.
Claim 7
Dependent Claim
17 words
The method according to claim 1 in which the silane compound (SiOA) has alkyl as a substituent.
Claim 8
Dependent Claim
14 words
The method according to claim 6 in which the alkyl has 1-9 carbon atoms.
Claim 9
Dependent Claim
21 words
The method according to claim 1 in which the silane compound (SiOA) is a member selected from the following compounds: ##STR8##
Claim 10
Independent Claim
117 words
A method for forming a deposition film which comprises applying an excitation energy to a silane compound (SiA) in a gaseous state having 2-6 silicon atoms, having at least one substituent (A) of the formula of --C a H b X c where b+c=2a+1, a is a positive integer, b and c are zero or a positive integer, and X is halogen atom, containing at least one species selected from hydrogen atom and halogen atom, and further at least one of the silicon atoms present at the both ends bonding to only hydrogen atom or halogen atom or both, except for bonding to another silicon atom, to form a deposition film containing silicon atom on a substrate.
Claim 11
Independent Claim
117 words
A method for forming a deposition film which comprises applying an excitation energy to a silane compound (SiA) in a gaseous state having 2-6 silicon atoms, having at least one substituent (A) of the formula of --C a H b X c where b+c=2a+1, a is a positive integer, b and c are zero or a positive integer, and X is halogen atom, containing at least one species selected from hydrogen atom and halogen atom, and further at least one of the silicon atoms present at the both ends bonding to only hydrogen atom or halogen atom or both, except for bonding to another silicon atom, to form a deposition film containing silicon atom on a substrate.
Claim 12
Dependent Claim
17 words
The method according to claim 9 in which the substituent (A) is a member selected from ##STR9##
Claim 13
Dependent Claim
93 words
The method according to claim 9 in which the silane compound (SiA) is selected from the following compounds: ______________________________________
H.sub.3 SiSiH.sub.2 (CH.sub.3)
(No. 1A)
H.sub.3 SiSiH(CH.sub.3).sub.2
(No. 2A)
H.sub.3 SiSi(CH.sub.3).sub.3
(No. 3A)
H.sub.3 SiSiH.sub.2 SiH.sub.2 (CH.sub.3)
(No. 4A)
H.sub.3 SiSiH.sub.2 SiH(CH.sub.3).sub.2
(No. 5A)
H.sub.3 SiSiH.sub.2 Si(CH.sub.3).sub.3
(No. 6A)
H.sub.3 SiSiH(CH.sub.3)Si(CH.sub.3).sub.3
(No. 7A)
H.sub.3 SiSi(CH.sub.3).sub.2 Si(CH.sub.3).sub.3
(No. 8A)
H.sub.3 SiSiH(CH.sub.3)SiH.sub.2 (CH.sub.3)
(No. 9A)
H.sub.3 SiSiH(CH.sub.3)SiH(CH.sub.3).sub.2
(No. 10A)
H.sub.3 SiSiH.sub.2 SiH.sub.2 SiH.sub.2 (CH.sub.3)
(No. 11A)
H.sub.3 SiSiH.sub.2 SiH.sub.2 SiH(CH.sub.3).sub.2
(No. 12A)
H.sub.3 SiSiH.sub.2 SiH.sub.2 Si(CH.sub.3).sub.3
(No. 13A)
and H.sub.3 SiSi(CH.sub.3).sub.2 Si(CH.sub.3).sub.2 Si(CH.sub.3).sub.3
(No. 14A)
______________________________________
Claim 14
Dependent Claim
14 words
The method according to claim 1 in which the excitation energy is electric energy.
Claim 15
Dependent Claim
14 words
The method according to claim 1 in which the excitation energy is heat energy.
Claim 16
Dependent Claim
14 words
The method according to claim 1 in which the excitation energy is light energy.
Claim 17
Dependent Claim
14 words
The method according to claim 9 in which the excitation energy is electric energy.
Claim 18
Dependent Claim
14 words
The method according to claim 9 in which the excitation energy is heat energy.
Claim 19
Dependent Claim
14 words
The method according to claim 9 in which the excitation energy is light energy.
References Cited (Backward Citations)
US4260647A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1988-10-07 | 1989-04-08 | 1989-10-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-10-07 | 1993-04-08 | 1993-10-08 | $3760.00 | Window Closed / Lapsed |
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