Method of making a non-single-crystalline semi-conductor layer on a substrate

Claim 1

A multi-layer semiconductor manufacturing method which employs a plurality n of sequentially arranged, adjacent reaction chambers C 1 , C 2 . . . C n , a plurality (n-1) of normally closed shutter means G 12 , G 23 . . . G.sub.(n-1)n separating the reaction chamber C 1 and C 2 , C 2 and C 3 . . . C.sub.(n-1) and C n , respectively, an inserting chamber C 0 adjacent the reaction chamber C 1 and separated therefrom by a shutter means G 01 and a taking-out chamber C n+1 adjacent the reaction chamber C n and separated therefrom by a shutter means G n (n+1), the reaction chambers C 1 to C n being each provided with a gas inlet and a gas outlet, the inserting chamber C 0 and the taking-out chamber C n+1 being each provided with another gas outlet, the inserting chamber C 0 and the reaction chamber C 1 , C 2 . . . C n having positioned therein (n+1) substrates B n+1 , B n . . . B 2 , B 1 respectively, the method comprising the steps of: depositing n semiconductors on the substrates B n , B n-1 . . . B 1 to form thereon n semiconductor layers L 1 , L 2 . . . L n , respectively, by introducing at least n semiconductor compound gases into the reaction chambers C 1 , C 2 . . . C n through the gas inlets thereof in such a state that gases in the reaction chambers C 1 , C 2 . . . C n are exhausted therefrom through the gas outlets thereof and by applying n ionizing electromagnetic fields to the semiconductor compound gases to ionize them into semiconductor compound gas plasmas while at the same time passing semiconductor gas plasmas into the reaction chambers C 1 , C 2 . . . C n by discharging therefrom the gases, respectively; displacing the shutter means G 01 , G 12 , G 23 . . . G.sub.(n-1)n, G n (n+1) and moving the substrates B n+1 , B n . . . B 2 , B 1 from the inserting chamber C 0 and the reaction chambers C 1 , C 2 . . . C n to the reaction chambers C 1 , C 2 . . . C n and taking out chamber C n+1 , respectively, while at the same time evacuating entirely the inserting chamber C 0 , the reaction chamber C 1 to C n and the taking-out chamber C n+1 or passing therethrough only carrier gases and then closing the shutter means G 01 , G 12 . . . G n (n+1) ; and positioning a substrate B n+2 in the inserting chamber C 0 while at the same time taking out the substrate B 1 from the taking-out chamber C n+1 , whereby to fabricate the multi-layer semiconductor having the n semiconductor layers L 1 , L 2 . . . L n sequentially laminated in this order.