Semiconductor device and manufacturing process thereof

Claim 2

A semiconductor device manufacturing process comprising the steps of: forming a resist pattern on the surface of a semiconductor substrate; cutting a groove in an exposed area of the semiconductor substrate which is not covered with the resist pattern, through a dry etching technique with directionality using the resist pattern as a mask; converting a first gas into a plasma under an electron cyclotron resonance condition, by using microwaves, in a divergent magnetic field the intensity of which diminishes toward a specimen table in a specimen chamber, and in a plasma generating chamber, leading the plasma-converted first gas along the magnetic field into the specimen chamber adjacent the plasma generating chamber, converting a second gas introduced into the specimen chamber into a plasma by the plasma-converted first gas and applying the plasma-converted first and second gases along the magnetic field to the semiconductor substrate on the specimen table in a direct direction substantially perpendicular thereto, thereby to form a high-density insulating film of excellent directionality in the groove and on the resist pattern to a thickness substantially equal to the depth of the groove, without heating the semiconductor substrate from the outside; and removing the resist pattern and the insulating film formed thereon to thereby obtain a structure in which only the groove is filled with the insulating film.

Claim 3

A semiconductor device manufacturing process according to claim 1, wherein the first gas is O 2 gas, the second gas is SiH 4 gas and the insulating film is a silicon oxide film.

Claim 4

A semiconductor device manufacturing process according to claim 1, further including a step of removing the insulating film deposited on the side wall of the resist pattern, by an isotropic etching technique, after the insulating film forming step but before the resist pattern removing step.

Claim 5

A semiconductor device manufacturing process comprising the steps of; (a) forming a first interconnection layer to be connected to a predetermined region of a cell on a substrate; (b) forming a first resist pattern on the first interconnection layer; (c) cutting a first groove in the exposed area of the first interconnection layer which is not covered with the first resist pattern, by a dry etching technique with directionality using the first resist pattern as a mask; (d) converting a first gas into a plasma under an electron cyclotron resonance condition, through using microwaves, in a divergent magnetic field the intensity of which diminishes toward a specimen table in a specimen chamber, and in a plasma generating chamber, leading the plasma-converted first gas along the magnetic field into the specimen chamber adjacent the plasma generating chamber, converting a second gas introduced into the specimen chamber into a plasma by the plasma-converted first gas and applying the plasma-converted first and second gases along the magnetic field to the substrate on the specimen table in a direction substantially perpendicular therto, thereby to form a high-density first insulating film of excellent directionality in the first groove and on the first resist pattern to a thickness substantially equal to the depth of the first groove, without heating the substrate from the outside; (e) removing the first resist pattern and the overlying first insulating film to thereby obtain a structure in which only the first groove is filled with the first insulating film; (f) forming a second insulating film on the first insulating film filled in the first groove and on the first interconnection layer; (g) forming a second resist pattern on the second insulating film; (h) cutting a second groove in the exposed area of the second insulating film which is not covered with the second resist pattern, by a dry etching technique with directionality using the second resist pattern as a mask, to thereby partly expose the first interconnection layer; (i) converting a third gas into a plasma under an electron cyclotron resonance condition, through using microwaves, in a divergent magnetic field, the intensity of which diminishes toward a specimen in a specimen chamber, and in a plasma generating chamber, leading the plasma-converted third gas along the magnetic field into the specimen chamber adjacent the plasma generating chamber, converting a fourth gas introduced into the specimen chamber into a plasma by the plasma-converted third gas and applying the plasma-converted third and fourth gases along the magnetic field to the substrate on the specimen table in a direction substantially perpendicular thereto, thereby to form a high-density conductive material in the second groove and on the second resist pattern to a thickness substantially equal to the depth of the second groove, without heating the substrate from the outside; (j) removing the second resist pattern and the overlying conductive material to thereby obtain a structure in which only the second groove is filled with the conductive material; and (k) forming a second interconnection layer on the conductive material filled in the second groove and on the second insulating film.

Claim 6

A semiconductor device manufacturing process comprising the steps of; (a) forming a first interconnection layer to be connected to a predetermined region of a cell on a substrate; (b) forming a first resist pattern on the first interconnection layer; (c) cutting a first groove in the exposed area of the first interconnection layer which is not covered with the first resist pattern, by a dry etching technique with directionality using the first resist pattern as a mask; (d) converting a first gas into a plasma under an electron cyclotron resonance condition, through using microwaves, in a divergent magnetic field the intensity of which diminishes toward a specimen table in a specimen chamber, and in a plasma generating chamber, leading the plasma-converted first gas along the magnetic field into the specimen chamber adjacent the plasma generating chamber, converting a second gas introduced into the specimen chamber into a plasma by the plasma-converted first gas and applying the plasma-converted first and second gases along the magnetic field to the substrate on the specimen table in a direction substantially perpendicular therto, thereby to form a high-density first insulating film of excellent directionality in the first groove and on the first resist pattern to a thickness substantially equal to the depth of the first groove, without heating the substrate from the outside; (e) removing the first resist pattern and the overlying first insulating film to thereby obtain a structure in which only the first groove is filled with the first insulating film; (f) forming a second insulating film on the first insulating film filled in the first groove and on the first interconnection layer; (g) forming a second resist pattern on the second insulating film; (h) cutting a second groove in the exposed area of the second insulating film which is not covered with the second resist pattern, by a dry etching technique with directionality using the second resist pattern as a mask, to thereby partly expose the first interconnection layer; (i) converting a third gas into a plasma under an electron cyclotron resonance condition, through using microwaves, in a divergent magnetic field, the intensity of which diminishes toward a specimen in a specimen chamber, and in a plasma generating chamber, leading the plasma-converted third gas along the magnetic field into the specimen chamber adjacent the plasma generating chamber, converting a fourth gas introduced into the specimen chamber into a plasma by the plasma-converted third gas and applying the plasma-converted third and fourth gases along the magnetic field to the substrate on the specimen table in a direction substantially perpendicular thereto, thereby to form a high-density conductive material in the second groove and on the second resist pattern to a thickness substantially equal to the depth of the second groove, without heating the substrate from the outside; (j) removing the second resist pattern and the overlying conductive material to thereby obtain a structure in which only the second groove is filled with the conductive material; and (k) forming a second interconnection layer on the conductive material filled in the second groove and on the second insulating film.

Claim 7

A semiconductor device manufacturing process according to claim 4 further including a step of forming a first spacer layer between the steps (a) and (c) and a step of side-etching the first spacer layer by an isotropic etching technique between the steps (c) and (d), and wherein the step (c) is a step of dry-etching the first spacer layer and the first interconnection layer using the first resist pattern as a mask to thereby form the first groove and the step (e) is a step of removing the first spacer layer and the overlying first resist layer and the first insulating film.

Claim 8

A semiconductor device manufacturing process according to claim 4, wherein the first and second resist patterns are each formed by a lower resist layer, an intermediate layer and an upper resist layer laminated in this order.