US7670530B2
Active / In Force
US
⏱️ 0.2 years remaining
Patterning substrates employing multiple chucks
Assignee: Canon Nanotechnologies Inc
•
Filing: 2007-01-19
•
Granted: 2010-03-02
•
Expires: 2027-01-19
Abstract
Abstract The present invention is directed towards a method for patterning first and second substrates in a nanoimprint lithography system, the method including, inter alia, positioning the first substrate on a first substrate chuck; positioning a nanoimprint material on the first substrate; obtaining a spatial relationship between the first substrate and a nanoimprint mold assembly and imprinting a pattern in the nanoimprint material on the first substrate with the nanoimprint mold assembly while concurrently positioning the second substrate on a second substrate chuck; separating the nanoimprint mold assembly from the nanoimprint material on the first substrate; positioning a nanoimprint material on the second substrate; removing the first substrate from the first substrate chuck while concurrently obtaining a spatial relationship between the second substrate and the nanoimprint mold assembly and imprinting a pattern in the nanoimprint material on the second substrate with the nanoimprint mold assembly; and separating the nanoimprint mold assembly from the nanoimprint material on the second substrate, with the first and second substrates being subjected to substantially the same process conditions.
Inventors
- 👤 Byung-Jin Choi
- 👤 Sidlgata V. Sreenivasan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 14:10
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/0002; B; B29; B29C; B29C59/00; B29C59/02; B29C59/022; B82; B82Y; B82Y10/00; B82Y40/00; H; H10; H10P; H10P72/00; H10P72/70; H10P72/76; Y; Y10; Y10S; Y10S977/00; Y10S977/84; Y10S977/887
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
247 words
A method for patterning first and second substrates in a nanoimprint lithography system, said method comprising: positioning said first substrate on a first substrate chuck having a cavity, a first side of said first substrate positioned toward a nanoimprint mold assembly, and a second side of said first substrate positioned toward said first substrate chuck; positioning a nanoimprint material on said first side of said first substrate; obtaining a spatial relationship between said first substrate and said nanoimprint mold assembly and imprinting a pattern in said nanoimprint material on said first side of said first substrate with said nanoimprint mold assembly while concurrently positioning said second substrate on a second substrate chuck; separating said nanoimprint mold assembly from said nanoimprint material on said first substrate; positioning a nanoimprint material on said second substrate; removing said first substrate from said first substrate chuck while concurrently obtaining a spatial relationship between said second substrate and said nanoimprint mold assembly and imprinting a pattern in said nanoimprint material on said second substrate with said nanoimprint mold assembly; separating said nanoimprint mold assembly from said nanoimprint material on said second substrate; and with said first and second substrates being subjected to substantially the same process conditions wherein the step of removing said first substrate further comprises a step of flipping said first substrate 180 degrees with respect to said nanoimprint mold assembly such that said nanoimprint material on said first substrate is positioned within said cavity of said first substrate chuck.
Claim 2
Independent Claim
247 words
A method for patterning first and second substrates in a nanoimprint lithography system, said method comprising: positioning said first substrate on a first substrate chuck having a cavity, a first side of said first substrate positioned toward a nanoimprint mold assembly, and a second side of said first substrate positioned toward said first substrate chuck; positioning a nanoimprint material on said first side of said first substrate; obtaining a spatial relationship between said first substrate and said nanoimprint mold assembly and imprinting a pattern in said nanoimprint material on said first side of said first substrate with said nanoimprint mold assembly while concurrently positioning said second substrate on a second substrate chuck; separating said nanoimprint mold assembly from said nanoimprint material on said first substrate; positioning a nanoimprint material on said second substrate; removing said first substrate from said first substrate chuck while concurrently obtaining a spatial relationship between said second substrate and said nanoimprint mold assembly and imprinting a pattern in said nanoimprint material on said second substrate with said nanoimprint mold assembly; separating said nanoimprint mold assembly from said nanoimprint material on said second substrate; and with said first and second substrates being subjected to substantially the same process conditions wherein the step of removing said first substrate further comprises a step of flipping said first substrate 180 degrees with respect to said nanoimprint mold assembly such that said nanoimprint material on said first substrate is positioned within said cavity of said first substrate chuck.
Claim 3
Dependent Claim
21 words
The method as recited in claim 1 further including the step of removing said second substrate from said second substrate chuck.
Claim 4
Dependent Claim
33 words
The method as recited in claim 2 wherein the step of removing said second substrate further comprises a step of flipping said second substrate 180 degrees with respect to said nanoimprint mold assembly.
Claim 5
Dependent Claim
55 words
The method as recited in claim 1 wherein the step of positioning said first substrate further comprises a step of obtaining a spatial relationship between a third substrate and said nanoimprint mold assembly and forming a pattern in a nanoimprint material on said third substrate, said third substrate being positioned on said second substrate chuck.
Claim 6
Dependent Claim
39 words
The method as recited in claim 1 wherein the step of obtaining a spatial relationship between said first substrate and said nanoimprint mold assembly further comprises a step of concurrently removing a third substrate from said second substrate chuck.
Claim 7
Dependent Claim
35 words
The method as recited in claim 1 wherein the step of removing said first substrate from said first substrate chuck further comprises a step of concurrently positioning a third substrate on said first substrate chuck.
Claim 8
Dependent Claim
26 words
The method as recited in claim 1 further including translating said first and second substrate chucks about an axis parallel to said first and second substrates.
Claim 9
Dependent Claim
26 words
The method as recited in claim 1 further including rotating said first and second substrate chucks about an axis perpendicular to said first and second substrates.
Claim 10
Independent Claim
146 words
A method for processing first and second substrates in a nanoimprint lithography system, said method comprising the steps of: obtaining a first spatial relationship between a first substrate chuck having a cavity and a nanoimprint mold assembly and a second spatial relationship, differing from said first spatial relationship, between a second substrate chuck and said nanoimprint mold assembly such that a pattern may be imprinted in a nanoimprint material on said first substrate, positioned on said first substrate chuck, with said nanoimprint mold assembly while concurrently obtaining a desired spatial relationship between said second substrate and said second substrate chuck; separating said nanoimprint mold assembly from said nanoimprint material on said first substrate; and, flipping said first substrate 180 degrees with respect to said nanoimprint mold assembly such that said nanoimprint material on said first substrate is positioned within said cavity of said first substrate chuck.
Claim 11
Independent Claim
146 words
A method for processing first and second substrates in a nanoimprint lithography system, said method comprising the steps of: obtaining a first spatial relationship between a first substrate chuck having a cavity and a nanoimprint mold assembly and a second spatial relationship, differing from said first spatial relationship, between a second substrate chuck and said nanoimprint mold assembly such that a pattern may be imprinted in a nanoimprint material on said first substrate, positioned on said first substrate chuck, with said nanoimprint mold assembly while concurrently obtaining a desired spatial relationship between said second substrate and said second substrate chuck; separating said nanoimprint mold assembly from said nanoimprint material on said first substrate; and, flipping said first substrate 180 degrees with respect to said nanoimprint mold assembly such that said nanoimprint material on said first substrate is positioned within said cavity of said first substrate chuck.
Claim 12
Dependent Claim
21 words
The method as recited in claim 9 wherein said first and second substrates are subjected to substantially the same process conditions.
Claim 13
Dependent Claim
36 words
The method as recited in claim 9 wherein the step of obtaining a desired spatial relationship between said second substrate and said second substrate chuck further includes positioning said second substrate on said second substrate chuck.
Claim 14
Dependent Claim
39 words
The method as recited in claim 9 wherein the step of obtaining a desired spatial relationship between said second substrate and said second substrate chuck further includes removing said second substrate from being positioned on said second substrate chuck.
Claim 15
Dependent Claim
33 words
The method as recited in claim 12 wherein the step of removing said second substrate further comprises a step of flipping said second substrate 180 degrees with respect to said nanoimprint mold assembly.
Claim 16
Dependent Claim
18 words
The method as recited in claim 9 further including positioning said first substrate on said first substrate chuck.
Claim 17
Dependent Claim
17 words
The method as recited in claim 9 further including positioning said nanoimprint material on said first substrate.
Claim 18
Independent Claim
212 words
A method for patterning first and second substrates, said method comprising: positioning said first substrate on a first substrate chuck having a cavity, a first side of said first substrate positioned toward a mold assembly, and a second side of said first substrate positioned toward said first substrate chuck; positioning a material on said first substrate; obtaining a spatial relationship between said first substrate and said mold assembly and forming a pattern in said material on said first substrate with said mold assembly while concurrently positioning said second substrate on a second substrate chuck; separating said mold assembly from said material on said first substrate; positioning a material on said second substrate; removing said first substrate from said first substrate chuck while concurrently obtaining a spatial relationship between said second substrate and said mold assembly and forming a pattern in said material on said second substrate with said mold assembly, wherein removing said first substrate includes flipping said first substrate 180 degrees with respect to said mold assembly such that said material on said first substrate is positioned within said cavity of said first substrate chuck; separating said mold assembly from said material on said second substrate; and with said first and second substrates being subjected to substantially the same process conditions.
Claim 19
Independent Claim
212 words
A method for patterning first and second substrates, said method comprising: positioning said first substrate on a first substrate chuck having a cavity, a first side of said first substrate positioned toward a mold assembly, and a second side of said first substrate positioned toward said first substrate chuck; positioning a material on said first substrate; obtaining a spatial relationship between said first substrate and said mold assembly and forming a pattern in said material on said first substrate with said mold assembly while concurrently positioning said second substrate on a second substrate chuck; separating said mold assembly from said material on said first substrate; positioning a material on said second substrate; removing said first substrate from said first substrate chuck while concurrently obtaining a spatial relationship between said second substrate and said mold assembly and forming a pattern in said material on said second substrate with said mold assembly, wherein removing said first substrate includes flipping said first substrate 180 degrees with respect to said mold assembly such that said material on said first substrate is positioned within said cavity of said first substrate chuck; separating said mold assembly from said material on said second substrate; and with said first and second substrates being subjected to substantially the same process conditions.
Claim 20
Dependent Claim
21 words
The method as recited in claim 16 further including the step of removing said second substrate from said second substrate chuck.
Claim 21
Dependent Claim
32 words
The method as recited in claim 17 wherein the step of removing said second substrate further comprises a step of flipping said second substrate 180 degrees with respect to said mold assembly.
Claim 22
Dependent Claim
53 words
The method as recited in claim 16 wherein the step of positioning said first substrate further comprises a step of obtaining a spatial relationship between a third substrate and said mold assembly and forming a pattern in a material on said third substrate, said third substrate being positioned on said second substrate chuck.
Claim 23
Dependent Claim
38 words
The method as recited in claim 16 wherein the step of obtaining a spatial relationship between said first substrate and said mold assembly further comprises a step of concurrently removing a third substrate from said second substrate chuck.
Claim 24
Dependent Claim
35 words
The method as recited in claim 16 wherein the step of removing said first substrate from said first substrate chuck further comprises a step of concurrently positioning a third substrate on said first substrate chuck.
References Cited (Backward Citations)
US3503538A
Cited
US4022855A
Cited
US4070116A
Cited
US4233261A
Cited
US4208240A
Cited
US4364971A
Cited
US4576900A
Cited
US4552832A
Cited
US4440804A
Cited
US4521445A
Cited
US4551192A
Cited
US4637904A
Cited
US4506184A
Cited
US4512848A
Cited
US4559717A
Cited
US4908298A
Cited
US5468542A
Cited
US4957663A
Cited
US4676868A
Cited
US4737425A
Cited
US4848911A
Cited
US4857477A
Cited
US4959252A
Cited
US4707218A
Cited
US4909151A
Cited
US5124089A
Cited
US6048799A
Cited
US6391798B1
Cited
US5736424A
Cited
US4731155A
Cited
US5028361A
Cited
US4936465A
Cited
US5028366A
Cited
US4866307A
Cited
US4862019A
Cited
US4980316A
Cited
US4921778A
Cited
US5148037A
Cited
US4964945A
Cited
US5110514A
Cited
US5053318A
Cited
EP0398589B1
Cited
US4932358A
Cited
US5330881A
Cited
US4919748A
Cited
US5151754A
Cited
US5362606A
Cited
US5073230A
Cited
US5003062A
Cited
US5328810A
Cited
US5451435A
Cited
US5240550A
Cited
US5331371A
Cited
US5126006A
Cited
US5288436A
Cited
US5362940A
Cited
US5240878A
Cited
US5212147A
Cited
FR2677043A1
Cited
US5324012A
Cited
US5366851A
Cited
US5357122A
Cited
US5259926A
Cited
US5277749A
Cited
US5424549A
Cited
US5364222A
Cited
US5244818A
Cited
US5545367A
Cited
US5246880A
Cited
US5374327A
Cited
US5371822A
Cited
US5232874A
Cited
US5376810A
Cited
US5445195A
Cited
US5601641A
Cited
US5250472A
Cited
US5534073A
Cited
US5431777A
Cited
US5422295A
Cited
US5425848A
Cited
US5324683A
Cited
US5480047A
Cited
US5449117A
Cited
US5512131A
Cited
US6180239B1
Cited
US5900160A
Cited
US6776094B1
Cited
US5776748A
Cited
US5753014A
Cited
US5434107A
Cited
US5612068A
Cited
US5737064A
Cited
US5542605A
Cited
US5453157A
Cited
US5515167A
Cited
US6495907B1
Cited
US5563684A
Cited
US5643364A
Cited
US5458520A
Cited
EP0795016A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2013-03-01 | 2013-08-31 | 2014-03-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2017-03-01 | 2017-08-31 | 2018-03-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2021-03-01 | 2021-08-31 | 2022-03-02 | $7700.00 | Window Closed / Lapsed |