US4921778A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Photoresist pattern fabrication employing chemically amplified metalized material
Assignee: Shipley Co Inc
•
Filing: 1988-07-29
•
Granted: 1990-05-01
•
Expires: 2008-07-29
Abstract
Abstract The present invention is directed to a method for the formation and dry development of photoresists treated only in a thin layer (i.e., approx. 2000 Angstroms thick) so as to be treated with an organometallic material. Treatment of this thin layer of the resist formulation in the process of the present invention is preferably accomplished by the vapor phase exposure of the resist formulation to an organometallic material such as a silylating compound capable of reacting with the resist formulation. The resist formulation also contains a photoacid generator, capable of releasing an acid which either causes the hydrolysis of the exposed portions of the resist that were created with organometallic vapor, or prevents the reaction of the organometallic vapor with the exposed portion of the resist.
Inventors
- 👤 James W. Thackeray
- 👤 Stephen A. Fine
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 16:26
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/022; G03F7/0041; G03F7/075; G03F7/0755; G03F7/09; G03F7/26; G03F7/265
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
109 words
A method of forming a patterned layer on a substrate comprising: (a) coating the substrate with a polymeric photoresist composition containing one or more photoacid generating agents or photoacid components; (b) drying the coating to form a resist film; (c) coating the resist film with a thin layer of an organometallic reagent; (d) exposing selected portions of the coated film with a source of radiation, thereby producing strong acids which convert the organometallic reagent to a hydrolyzed by-product product; (e) baking the exposed film to drive off the hydrolzed organometallic reagent; and (f) dry developing the film to remove the remaining reactive portions by etching in an oxygen plasma.
Claim 2
Independent Claim
109 words
A method of forming a patterned layer on a substrate comprising: (a) coating the substrate with a polymeric photoresist composition containing one or more photoacid generating agents or photoacid components; (b) drying the coating to form a resist film; (c) coating the resist film with a thin layer of an organometallic reagent; (d) exposing selected portions of the coated film with a source of radiation, thereby producing strong acids which convert the organometallic reagent to a hydrolyzed by-product product; (e) baking the exposed film to drive off the hydrolzed organometallic reagent; and (f) dry developing the film to remove the remaining reactive portions by etching in an oxygen plasma.
Claim 3
Dependent Claim
31 words
The method of claim 1 or 2, wherein the polymeric materials in the photoresist composition are selected from the group consisting of poly(p-vinyl)-phenols, the novolak resins, polyvinyl pyrollidones, and mixtures thereof.
Claim 4
Dependent Claim
69 words
The method of claim 1 or wherein the photoacid generator is selected from the group consisting of halogenated aromatic compounds of the formula: ##STR4## wherein: X=Cl, Br, F, or I; n is an integer from 1 to 10 inclusive; m is an integer from 1 to 10 inclusive; and the organic substituents R 1 -R 3 are each independently selected from the group consisting of alkyl or aryl groups.
Claim 5
Dependent Claim
23 words
The method of claim 3, wherein the the organic substituents R 1 -R 3 are each independently C 1 -C 16 alkyl groups.
Claim 6
Dependent Claim
22 words
The method of claim 4, wherein the the organic substituents R 1 -R 3 are each independently C 1 -C 10 groups.
Claim 7
Dependent Claim
22 words
The method of claim 3, wherein the the organic substituents R 1 -R 3 are each independently C 1 -C 6 groups.
Claim 8
Dependent Claim
22 words
The method of claim 3, wherein the the organic substituents R 1 -R 3 are each independently phenyl or alkyl substituted phenyl.
Claim 9
Dependent Claim
49 words
The method of claim 1, wherein the photoacid generator is selected from the group consisting of halogenated aromatic compounds of the formula: ##STR5## wherein: the substituents R 1 14 R 3 are each independently selected from the group consisting of hydrogen, and halogenated (F, Br, Cl, I) alkyl groups.
Claim 10
Dependent Claim
20 words
The method of claim 8, wherein the the halogenated alkyl groups are each independently C 1 -C 16 alkyl groups.
Claim 11
Dependent Claim
19 words
The method of claim 8, wherein the the halogenated alkyl groups are each independently C 1 -C 10 groups.
Claim 12
Dependent Claim
19 words
The method of claim 9, wherein the the halogenated alkyl groups are each independently C 1 -C 6 groups.
Claim 13
Dependent Claim
73 words
The method of claim 1, wherein the organometallic compound is selected from the compounds having the formula: R.sub.1 R.sub.2 R.sub.3 R.sub.4 --M wherein; M is selected from the group consisting of Si, Sn, Ti, P, Ge, and Zr; and the organic substituents R 1 -R 4 are each independently selected from the group consisting of alkyl, aryl, and a suitable leaving group, with the proviso that one such substituent is a leaving group.
Claim 14
Dependent Claim
9 words
The method of claim 12, wherein M is Si.
Claim 15
Dependent Claim
31 words
The method of claim 12, wherein up to three of the organic substituents R 1 -R 4 are each independently selected from the group consisting of C 1 -C 16 alkyl.
Claim 16
Dependent Claim
31 words
The method of claim 12, wherein up to three of the organic substituents R 1 -R 4 are each independently selected from the group consisting of C 1 -C 10 alkyl.
Claim 17
Dependent Claim
31 words
The method of claim 12, wherein up to three of the organic substituents R 1 -R 4 are each independently selected from the group consisting of C 1 -C 6 alkyl.
Claim 18
Dependent Claim
31 words
The method of claim 12, wherein up to three of the organic substituents R 1 -R 4 are each independently selected from the group consisting of phenyl or alkyl substituted phenyl.
Claim 19
Dependent Claim
27 words
The method of claim 12, wherein at least one of the leaving groups is a halogen selected from the group consisting of F, Cl, Br, or I.
Claim 20
Dependent Claim
25 words
The method of claim 12, wherein at least one of the leaving groups is an amino group of the formula NR 1 R 2 .
Claim 21
Dependent Claim
23 words
The method of claim 12, wherein at least one of the leaving groups is an alkoxy group of the formula OR 1 .
Claim 22
Dependent Claim
60 words
The method of claim 1, wherein the organometallic compound is selected from the compounds having the formula: (R.sub.1 R.sub.2 R.sub.3 --M).sub.2+x --NH.sub.1-x wherein; x=0 or 1; M is selected from the group consisting of Si, Sn, Ti, Ge, and Zr; and the organic substituents R 1 -R 3 are each independently selected from the group consisting of alkyl and aryl.
Claim 23
Dependent Claim
9 words
The method of claim 21, wherein M is Si.
Claim 24
Dependent Claim
27 words
The method of claim 21, wherein the organic substituents R 1 -R 3 are each independently selected from the group consisting of C 1 -C 16 alkyl.
Claim 25
Dependent Claim
27 words
The method of claim 21, wherein the organic substituents R 1 -R 3 are each independently selected from the group consisting of C 1 -C 10 alkyl.
Claim 26
Dependent Claim
27 words
The method of claim 21, wherein the organic substituents R 1 -R 3 are each independently selected from the group consisting of C 1 -C 6 alkyl.
Claim 27
Dependent Claim
27 words
The method of claim 21, wherein the organic substituents R 1 -R 3 are each independently selected from the group consisting of phenyl and alkyl substituted phenyl.
Claim 28
Dependent Claim
44 words
The method of claim 1, wherein the photoactive compound is selected from compounds having the formula: ##STR6## wherein Y is selected from the group consisting of O, S, N, and C; and R is selected from the group consisting of alkyl and aryl substituents.
Claim 29
Dependent Claim
19 words
The method of claim 27, wherein R is selected from the group consisting of C 1 -C 16 alkyl.
Claim 30
Dependent Claim
19 words
The method of claim 27, wherein R is selected from the group consisting of C 1 -C 10 alkyl.
Claim 31
Dependent Claim
19 words
The method of claim 27, wherein R is selected from the group consisting of C 1 -C 6 alkyl.
Claim 32
Dependent Claim
19 words
The method of claim 27, wherein R is selected from the group consisting of phenyl and alkyl substituted phenyl.
Claim 33
Dependent Claim
21 words
The method of claim 1, wherein the photo-acid generator is selected from the triaryl sulfonium salts and the diaryl iodonium salts.
References Cited (Backward Citations)
JPS5723937A
Cited
US4396704A
Cited
US4357369A
Cited
US4426247A
Cited
US4433044A
Cited
US4430153A
Cited
US4552833A
Cited
JPS6144715A
Cited
US4613389A
Cited
US4613398A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-04-30 | 1993-10-30 | 1994-05-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-04-30 | 1997-10-30 | 1998-05-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-04-30 | 2001-10-30 | 2002-05-01 | $7700.00 | Window Closed / Lapsed |