US5643364A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plasma chamber with fixed RF matching
Assignee: Applied Materials Inc
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Filing: 1996-05-02
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Granted: 1997-07-01
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Expires: 2016-05-02
Abstract
Abstract A plasma chamber RF excitation system includes a high frequency RF power source having a fixed RF match circuit at its output and sensing and control apparatus for sensing the amount of RF power delivered by the RF power source and for regulating the output power level of the RF power source so as to maintain the RF power delivered by the RF power source at a desired level, and an RF plasma chamber including an RF radiator. The power source is mounted proximate or directly on the plasma chamber so that the distance between them is much less than an eighth of a wavelength at thr frequency of the RF source. The system may further include an endpoint detector for a plasma etch process or a chamber cleaning process which halts the process when the VSWR or reflected power ceases to change in response to the progress of the etch process.
Inventors
- 👤 Jun Zhao
- 👤 Stefan Wolff
- 👤 Kenneth Smyth
- 👤 William Nixon Taylor, Jr.
- 👤 Gerald McNutt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 16:36
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/32091; H01J37/32174; H01J37/32183; H01J37/32431; H01J37/32798; H01J37/32853; H01J37/32862; H01J37/32917; H01J37/32935; H01J37/32963; H01J37/3299; H05; H05H; H05H1/00; H05H1/24; H05H1/46; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; H10P72/0418; H10P72/0421
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
200 words
A high frequency RF plasma system for processing a semiconductor substrate, comprising: a plasma chamber adapted to receive a semiconductor substrate and a process gas therein; a coupling device for coupling RF energy to the process gas inside the chamber; an RF power generator mounted adjacent to the plasma chamber, including an RF power source for producing RF energy having a frequency of at least 1 MHz, the power source having an output located at a distance from the coupling device of substantially less than an eighth of a wavelength at said frequency; a fixed RF impedance matching circuit, having a fixed impedance, connected between the RF power source and the coupling device; a power sensing coupler connected in series with the match circuit between the RF power source and the coupling device, said power sensing coupler having a measurement output indicating the amount of RF power delivered through the coupler; and a control circuit coupled to said measurement output of said power sensing coupler and connected to said RF power circuit to govern the amount of RF power produced by said RF power circuit so as to maintain the delivered power measured by the coupler at a predetermined level.
Claim 2
Dependent Claim
200 words
A high frequency RF plasma system for processing a semiconductor substrate, comprising: a plasma chamber adapted to receive a semiconductor substrate and a process gas therein; a coupling device for coupling RF energy to the process gas inside the chamber; an RF power generator mounted adjacent to the plasma chamber, including an RF power source for producing RF energy having a frequency of at least 1 MHz, the power source having an output located at a distance from the coupling device of substantially less than an eighth of a wavelength at said frequency; a fixed RF impedance matching circuit, having a fixed impedance, connected between the RF power source and the coupling device; a power sensing coupler connected in series with the match circuit between the RF power source and the coupling device, said power sensing coupler having a measurement output indicating the amount of RF power delivered through the coupler; and a control circuit coupled to said measurement output of said power sensing coupler and connected to said RF power circuit to govern the amount of RF power produced by said RF power circuit so as to maintain the delivered power measured by the coupler at a predetermined level.
Claim 3
Dependent Claim
70 words
The reactor system of claim 1 wherein said power sensing coupler comprises a dual directional coupler whose measurement output includes a forward signal output indicating the amount of power transmitted forward through the coupler, and a reflected signal output indicating the amount of power reflected back through the coupler, so that the difference between the forward and reflected signal outputs indicates the amount of RF power delivered through the coupler.
Claim 4
Dependent Claim
43 words
The reactor system of claim 1 wherein said power sensing coupler is connected in series between the power source and the matching circuit, whereby the measurement output of the coupler indicates the total RF power delivered to the matching circuit and the chamber.
Claim 5
Dependent Claim
37 words
The reactor system of claim 1 wherein said power sensing coupler is connected in series between the matching circuit and the chamber, whereby the measurement output of the coupler indicates the RF power delivered the the chamber.
Claim 6
Dependent Claim
51 words
The reactor system of claim 3 further comprising an output stage connected between said RF power circuit and said dual directional coupler, said RF power circuit, said output stage and said dual directional coupler being within an RF generator, said fixed RF match circuit being mounted directly on said RF generator.
Claim 7
Dependent Claim
54 words
The reactor system of claim 5 wherein said output stage provides a predetermined output impedance and wherein said fixed RF match circuit has a reactance providing an RF match between said predetermined output impedance and an expected load impedance lying in a range of load impedances presented by a plasma in said reactor chamber.
Claim 8
Dependent Claim
48 words
The reactor system of claim 4 wherein said fixed RF match circuit has a reactance providing an RF match between an output impedance of said RF power circuit and an expected load impedance lying in a range of load impedances presented by a plasma in said reactor chamber.
Claim 9
Dependent Claim
43 words
The reactor system of claim 1 further comprising a sensor connected to said control circuit for sensing during a chamber cleaning operation whether said power reflected back has reached a stable level, indicative of a complete removal of contamination from said reactor chamber.
Claim 10
Dependent Claim
108 words
A plasma reactor system, comprising: an RF plasma chamber including an RF coupling device for coupling RF power into the chamber; a high frequency RF power source on said RF plasma chamber, comprising: an RF power circuit providing an RF signal of a high frequency greater than 1 MHz; a fixed RF match circuit cablelessly connected between said RF power circuit and said RF coupling device; and sensing and control means for sensing the amount of RF power delivered by said RF power source and for regulating the output power level of said RF power circuit so as to maintain said RF power delivered at a desired level.
Claim 11
Dependent Claim
108 words
A plasma reactor system, comprising: an RF plasma chamber including an RF coupling device for coupling RF power into the chamber; a high frequency RF power source on said RF plasma chamber, comprising: an RF power circuit providing an RF signal of a high frequency greater than 1 MHz; a fixed RF match circuit cablelessly connected between said RF power circuit and said RF coupling device; and sensing and control means for sensing the amount of RF power delivered by said RF power source and for regulating the output power level of said RF power circuit so as to maintain said RF power delivered at a desired level.
Claim 12
Dependent Claim
19 words
The plasma reactor system of claim 9 wherein said high frequency is on the order of about 13 MHz.
Claim 13
Dependent Claim
79 words
The plasma reactor system of claim 9 wherein said sensing and control means comprises: means for sensing forward power and reflected power at said fixed RF match circuit; means for computing delivered RF power as a difference between said forward power and reflected power; means for comparing said delivered RF power to a desired power level to produce an error signal and for changing the power produced by said RF power source so as to null said error signal.
Claim 14
Dependent Claim
24 words
The plasma reactor system of claim 11 wherein said means for sensing is connected to an RF input of said fixed RF match circuit.
Claim 15
Dependent Claim
24 words
The plasma reactor system of claim 11 wherein said means for sensing is connected to an RF output of said fixed RF match circuit.
Claim 16
Dependent Claim
39 words
The plasma reactor of claim 9 wherein said fixed RF match circuit provides an approximate RF match between an output impedance of said RF power source and a nominal impedance encountered at said RF radiator of said reactor chamber.
Claim 17
Dependent Claim
42 words
The plasma reactor of claim 14 wherein said nominal impedance is a load impedance presented by a plasma within said reactor chamber and lies in a range of load impedances presented by said plasma under different operating conditions of said reactor chamber.
Claim 18
Dependent Claim
25 words
The plasma reactor of claim 15 wherein said range corresponds to a voltage standing wave ratio between forward and reflected power not exceeding about 3:1.
Claim 19
Dependent Claim
43 words
The reactor system of claim 11 further comprising a sensor connected to said control circuit for sensing during a chamber cleaning operation whether said power reflected back has reached a stable level, indicative of a complete removal of contamination from said reactor chamber.
References Cited (Backward Citations)
US3860507A
Cited
EP0058820A1
Cited
JPS5873848A
Cited
US4557819A
Cited
US4824546A
Cited
US5140223A
Cited
US5108569A
Cited
DE4037698A1
Cited
US5241152A
Cited
EP0451514A2
Cited
US5147493A
Cited
US5288971A
Cited
US5478429A
Cited
US5473291A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-06-30 | 2000-12-30 | 2001-07-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-06-30 | 2004-12-30 | 2005-07-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-06-30 | 2008-12-30 | 2009-07-01 | $7700.00 | Window Closed / Lapsed |