US3947866A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ion implanted resistor having controlled temperature coefficient and method
Assignee: Signetics Corp
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Filing: 1974-05-31
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Granted: 1976-03-30
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Expires: 1994-05-31
Abstract
Abstract Ion implanted resistor having a semiconductor body of one conductivity type and having a planar surface with a region of opposite conductivity type formed in the semiconductor body which is defined by a PN junction extending to the surface. One portion of the region of opposite conductivity type in cross-section has a greater depth than the remaining portion whereby there is provided a resistance whose effective value is the value given by the parallel resistance of said one portion and the remaining portion to thereby provide a resistor having a controlled temperature coefficient.
Inventors
- 👤 Hans H. Stellrecht
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-22 19:37
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/43; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/106; Y10S148/136; Y10S148/145; Y10S438/00; Y10S438/965
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
106 words
In a semiconductor structure having an ion implanted resistor formed therein with controlled temperature coefficient, a semiconductor body of one conductivity type and having a planar surface, a region of opposite conductivity type formed in the body by ion implantation and being defined by a PN junction extending to the surface and serving as a resistor, one portion of said region in cross-section having a greater depth than the remaining portion of the region whereby there is provided a resistor having a resistance whose effective value is given by the parallel resistance of said one portion and the remaining portion which has a controlled temperature coefficient.
Claim 2
Dependent Claim
106 words
In a semiconductor structure having an ion implanted resistor formed therein with controlled temperature coefficient, a semiconductor body of one conductivity type and having a planar surface, a region of opposite conductivity type formed in the body by ion implantation and being defined by a PN junction extending to the surface and serving as a resistor, one portion of said region in cross-section having a greater depth than the remaining portion of the region whereby there is provided a resistor having a resistance whose effective value is given by the parallel resistance of said one portion and the remaining portion which has a controlled temperature coefficient.
Claim 3
Dependent Claim
46 words
A structure as in claim 1 together with a layer of insulating material on said surface of said body, and leads carried by said layer of insulating material and extending through said layer of insulating material and in contact with said region of opposite conductivity type.
Claim 4
Dependent Claim
45 words
A semiconductor structure as in claim 1 wherein said other portion of said region of opposite conductivity type has a width which is greater than the width of the deeper one portion so that said region of opposite conductivity type has a negative temperature coefficient.
Claim 5
Dependent Claim
46 words
A semiconductor structure as in claim 1 wherein said other portion of said region of opposite conductivity type has a width which is substantially greater than the width of the deeper one portion so that said region of opposite conductivity tpe has a positive temperature coefficient.
Claim 6
Dependent Claim
31 words
A semiconductor structure as in claim 1 wherein said PN junction has curved portions extending to the surface which extend over a relatively wide region to provide greater voltage breakdown capabilities.
Claim 7
Dependent Claim
14 words
A semiconductor structure as in claim 5 where said curved portion has steps therein.
Claim 8
Dependent Claim
50 words
A semiconductor structure as in claim 2 together with contact regions formed in said semiconductor body and being of the same conductivity type as said region of opposite conductivity type and making contact with said region of opposite conductivity type and wherein said leads make contact with said contact regions.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-03-30 | 1979-09-29 | 1980-03-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-03-30 | 1983-09-29 | 1984-03-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-03-30 | 1987-09-29 | 1988-03-30 | $7700.00 | Window Closed / Lapsed |