US3683306A
Expired / Lapsed
US
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Temperature compensated semiconductor resistor containing neutral inactive impurities
Assignee: US Philips Corp
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Filing: 1969-10-28
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Granted: 1972-08-08
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Expires: 1989-10-28
Abstract
Abstract A temperature compensated semiconductor resistor is described wherein electrically inactive neutral impurities are included in the semiconductor. The neutral impurities do not contribute free carriers to offset mobility reduction due to lattice scattering, but instead provide an impurity scattering dependence that temperature compensates.
Inventors
- 👤 Kornelis Bulthuis
- 👤 John Martin Shannon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-22 19:36
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/43; H10D84/00; H10D84/201; H10D84/204; H10D84/209; Y; Y10; Y10S; Y10S148/00; Y10S148/049; Y10S438/00; Y10S438/914; Y10S438/934
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
75 words
A semiconductor device having a semiconductor body containing a resistance element, said resistance element comprising a semiconductor region and spaced connections to the region, said semiconductor region containing electrically active impurities determining its conductivity type and producing free charge carriers therein whereby said resistance element has a given temperature coefficient of resistance, said semiconductor region also containing electrically inactive neutral impurities in an amount producing a significant reduction of the said temperature coefficient of resistance.
Claim 2
Dependent Claim
75 words
A semiconductor device having a semiconductor body containing a resistance element, said resistance element comprising a semiconductor region and spaced connections to the region, said semiconductor region containing electrically active impurities determining its conductivity type and producing free charge carriers therein whereby said resistance element has a given temperature coefficient of resistance, said semiconductor region also containing electrically inactive neutral impurities in an amount producing a significant reduction of the said temperature coefficient of resistance.
Claim 3
Dependent Claim
43 words
A semiconductor device as set forth in claim 1 wherein the semiconductor region is a substance selected from the group consisting of silicon, germanium and mixed crystals thereof, and the neutral impurities are elements selected from the group consisting of tin and lead.
Claim 4
Dependent Claim
18 words
A semiconductor device as set forTh in claim 2 wherein the electrically active impurities are donors or acceptors.
Claim 5
Dependent Claim
90 words
A semiconductor device having a semiconductor body containing a resistance element, said resistance element comprising a semiconductor region and spaced connections to the region, said semiconductor region containing electrically active impurities determining its conductivity type and producing free charge carriers therein whereby said resistance elements has a given temperature coefficient of resistance, said semiconductor region also containing an additional concentration of said impurities in considerable excess of the free charge carrier concentration present such that neutral impurities are formed producing a significant reduction of the said temperature coefficient of resistance.
Claim 6
Dependent Claim
90 words
A semiconductor device having a semiconductor body containing a resistance element, said resistance element comprising a semiconductor region and spaced connections to the region, said semiconductor region containing electrically active impurities determining its conductivity type and producing free charge carriers therein whereby said resistance elements has a given temperature coefficient of resistance, said semiconductor region also containing an additional concentration of said impurities in considerable excess of the free charge carrier concentration present such that neutral impurities are formed producing a significant reduction of the said temperature coefficient of resistance.
Claim 7
Dependent Claim
33 words
A semiconductor device as set forth in claim 4 wherein the semiconductor region is of silicon, and the impurities are elements selected from the group consisting of gallium, boron, aluminum, indium and antimony.
Claim 8
Dependent Claim
16 words
A semiconductor device as set forth in claim 5 wherein the additional concentration is ion implanted.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-08-08 | 1976-02-07 | 1976-08-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-08-08 | 1980-02-07 | 1980-08-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-08-08 | 1984-02-07 | 1984-08-08 | $7700.00 | Window Closed / Lapsed |