US3829890A
Expired / Lapsed
US
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Ion implanted resistor and method
Assignee: Signetics Corp
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Filing: 1971-11-01
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Granted: 1974-08-13
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Expires: 1991-11-01
Abstract
Abstract Ion implanted resistor formed in a body of crystalline semiconductor material of a first conductivity type and a known bulk resistivity with at least one region of implanted ions in the body having a conductivity opposite that of the body. The resistance changes no more than 3 percent from the room temperature value between -50 and 125*C. Between 0* and 70*C., the change is only 0.3 percent. In the method, ion implanted resistors having the desired sheet resistivity are formed by varying the implantation energy and/or the thickness of a stopping layer. In addition, the resistor is annealed at a temperature ranging from 550*C. to 650*C.
Inventors
- 👤 D Perloff
- 👤 J Kerr
- 👤 J Marley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-22 22:06
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/43; H01; H01C; H01C17/00; H01C17/06; H01C17/075; H10D99/00; H10P; H10P95/00
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
132 words
An ion implanted resistor comprising a body of crystalline silicon semiconductor material of N conductivity type and a known bulk resistivity, said body having a planar surface, at least one region of implanted boron ions implanted at room temperature in said body having an impurity concentration ranging from 1014 to 5 X 1015 boron ions per square centimeter and being defined by a PN junction extending to said surface, said body having said region being annealed at a temperature of 500*C to 700*C, said region having a predetermined sheet resistivity ranging from 870 to 3,000 ohms per square centimeter with a temperature variability of less than 3 percent within the temperature range of -50*C. to 125*C, and conductive lead means carried by said body and coupled to said region of implanted ions.
Claim 2
Dependent Claim
132 words
An ion implanted resistor comprising a body of crystalline silicon semiconductor material of N conductivity type and a known bulk resistivity, said body having a planar surface, at least one region of implanted boron ions implanted at room temperature in said body having an impurity concentration ranging from 1014 to 5 X 1015 boron ions per square centimeter and being defined by a PN junction extending to said surface, said body having said region being annealed at a temperature of 500*C to 700*C, said region having a predetermined sheet resistivity ranging from 870 to 3,000 ohms per square centimeter with a temperature variability of less than 3 percent within the temperature range of -50*C. to 125*C, and conductive lead means carried by said body and coupled to said region of implanted ions.
Claim 3
Dependent Claim
26 words
A resistor as in claim 1 wherein said resistor has a temperature variability of less than 0.3 percent in the temperature range of 0*C. to 70*C.
Claim 4
Dependent Claim
50 words
A resistor as in claim 1 together with a layer of insulating material overlying said surface and having a thickness of approximately 1 micron, said layer being formed with a thinner portion which overlies said region of opposite conductivity type and has a thickness ranging from 1,000 to 3,000 Angstroms.
Claim 5
Dependent Claim
58 words
A resistor as in claim 1 together with highly doped regions of opposite conductivity type in said body and engaging said region of implanted ions at spaced points and wherein said lead means includes leads adherent to the surface of said insulating layer and extending therethrough to make contact with said highly doped regions of opposite conductivity type.
References Cited (Backward Citations)
US3683306A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-08-12 | 1978-02-11 | 1978-08-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-08-12 | 1982-02-11 | 1982-08-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-08-12 | 1986-02-11 | 1986-08-13 | $7700.00 | Window Closed / Lapsed |