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US3725136A
Expired / Lapsed
US
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Junction field effect transistor and method of fabrication
Assignee: Texas Instruments Inc
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Filing: 1971-06-01
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Granted: 1973-04-03
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Expires: 1991-06-01
Abstract
Abstract A JUNCTION FIELD EFFECT TRANSISTOR IS FABRICATED IN AN INTRINSIC SILICON SUBSTRATE. USING ION IMPLANTATION IS UTILIZED TO CONTROL THE IMPURITY PROFILE OF THE CHANNEL AND ELECTRON BEAM PATTERN DEFINITION PROVIDES AN EXTREMELY NARROW GATE REGION PROVIDING A JEET HAVING NEAR OPTIMUM CHARACTERISTICS.
Inventors
- 👤 I Morgan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 01:15
CPC Classifications
H; H10; H10D; H10D99/00; H10D30/00; H10D30/01; H10D30/051; H10D30/80; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/053; Y10S148/157
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-04-02 | 1976-10-02 | 1977-04-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-04-02 | 1980-10-02 | 1981-04-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-04-02 | 1984-10-02 | 1985-04-03 | $7700.00 | Window Closed / Lapsed |