Semiconductor component with dielectric carrier and its manufacture

Claim 2

In a component assembly incorporating a flattened, integrated semiconductor circuit structure of the type having a plurality of discrete sites of doped, semiconductor material which discrete sites are interconnected together in a predetermined manner by thin layered paths of conductive material, the improvements which comprise:

Claim 3

(A) a dielectric carrier layer generally continuously overlying, and integrally bonded to, surface portions of such flattened integrated semiconductor circuit structure on one side thereof, said carrier layer being comprised of a polyimide resin, (B) a semiconductor wall member generally continuously perimetrically circumscribing such integrated semiconductor circuit and integrally associated therewith on the opposed side of such flattened integrated semiconductor circuit structure, (C) such flattened integrated semiconductor circuit structure having said layered paths of conductive material therein located in adjacent relationship to said dielectric carrier layer on said one side thereof, (D) such flattened integrated semiconductor circuit structure further having said discrete sites of doped semiconductor material located in laterally spaced relationship to said wall member, and (E) said carrier layer having a thickness at least sufficient to provide mechanical support for said circuit structure and said thin layered paths.

Claim 4

(A) a dielectric carrier layer generally continuously overlying, and integrally bonded to, surface portions of such flattened integrated semiconductor circuit structure on one side thereof, said carrier layer being comprised of a polyimide resin, (B) a semiconductor wall member generally continuously perimetrically circumscribing such integrated semiconductor circuit and integrally associated therewith on the opposed side of such flattened integrated semiconductor circuit structure, (C) such flattened integrated semiconductor circuit structure having said layered paths of conductive material therein located in adjacent relationship to said dielectric carrier layer on said one side thereof, (D) such flattened integrated semiconductor circuit structure further having said discrete sites of doped semiconductor material located in laterally spaced relationship to said wall member, and (E) said carrier layer having a thickness at least sufficient to provide mechanical support for said circuit structure and said thin layered paths.

Claim 5

The component assembly of claim 1, wherein a second dielectric carrier layer generally continuously overlies, and is integrally bonded to, surface portions of such flattened integrated semiconductor circuit on said opposed side thereof said second dielectric carrier layer extending between said wall member laterally, said wall member upstanding to a height in excess of the maximum thickness of such second dielectric carrier layer.

Claim 6

The component assembly of claim 1, further including soldering terminals which (A) are generally upstanding from said dielectric carrier layer, and (B) are conductively connected with terminal end contact portions of such layered paths through said dielectric carrier layer.

Claim 7

A plurality of component assemblies of claim 1 in laterally adjacent relationship to one another which are secured together substantially by said dielectric carrier layer.