US3710205A
Expired / Lapsed
US
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Electronic components having improved ionic stability
Assignee: Westinghouse Electric Corp
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Filing: 1971-04-09
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Granted: 1973-01-09
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Expires: 1991-04-09
Abstract
Abstract This disclosure is concerned with electronic components having improved ionic stability. The improved stability is achieved by the doping of silicon oxide films and layers in the component. Suitable doping materials are selected from a group of material having divalent large ionic radii atoms.
Inventors
- 👤 J Swanson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 15:28
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/43; H10D; H10D99/00; Y; Y10; Y10S; Y10S148/00; Y10S148/049; Y10S148/053; Y10S148/118; Y10S148/12; Y10S148/15
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
25 words
The device of claim 1 in which the doping material comprises from 0.5 percent to 5 percent, by volume, of the body of silicon oxide.
Claim 2
Dependent Claim
131 words
A field effect transistor comprising a source contact and a drain contact spaced apart and disposed on a substrate, a layer of a semiconductor material disposed between said source and drain contacts and in physical contact therewith, a layer of a doped silicon oxide disposed over at least a portion of said layer of semiconductor material and a gate contact disposed on said layer of doped silicon oxide between said source and drain electrodes, said silicon oxide layer being doped with at least one divalent material, said divalent material being selected from the group consisting of barium, lead, strontium, calcium and oxides thereof, and having an atomic radii of at least 0.9 A said divalent material comprising from 0.1 percent to 20 percent, by volume, of said layer of silicon dioxide.
Claim 3
Dependent Claim
27 words
The field effect transistor of claim 3 in which the doping material comprises from 0.5 percent to 5 percent, by volume, of the body of silicon oxide.
Claim 4
Dependent Claim
15 words
The field effect transistor of claim 4 in which the doping material is barium oxide.
Claim 5
Dependent Claim
109 words
A semiconductor device comprising a body of semiconductor material having at least two adjacent regions of opposite type semiconductivity, a p-n junction between said two adjacent regions, said p-n junction extending to at least one surface of said body of semiconductor material, a layer of doped silicon oxide disposed over at least that portion of the surface where the p-n junction terminates, said silicon oxide layer being doped with from 0.1 percent to 20 percent, by volume, with at least one divalent material selected from the group consisting of barium, lead, strontium, calcium and oxides thereof and said divalent material having an atomic radii of at least 0.9 A.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-01-09 | 1976-07-10 | 1977-01-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-01-09 | 1980-07-10 | 1981-01-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-01-09 | 1984-07-10 | 1985-01-09 | $7700.00 | Window Closed / Lapsed |