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US4034395A Expired / Lapsed US ⏱️ 0.0 years remaining

Monolithic integrated circuit having a plurality of resistor regions electrically connected in series

Assignee: Samsung Electronics Co Ltd
•
Filing: 1976-09-29
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Granted: 1977-07-05
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Expires: 1996-09-29
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Abstract

Abstract A precision sensistor structure is disclosed for use in a monolithic integrated circuit.

Inventors

  • 👤 Mona M. Abdelrahman

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-22 19:35
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/201; H10D84/204; H10D84/209; H10N; H10N19/00; Y; Y10; Y10S; Y10S148/00; Y10S148/136

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 182 words
A monolithic integrated circuit resistor provided in a semiconductor material having a voltage coefficient of resistance which is less than a selected value, said resistor comprising: a set of n isolated regions in said semiconductor material, each of a first conductivity type; a set of n resistor regions, each of a second conductivity type and each being located in a corresponding one of said isolated regions, there being a semiconductor junction occurring between each said resistor region and its corresponding isolated region, each of said resistor regions having a first end and a second end; and an interconnection network means electrically connecting each of said resistor regions in series with one another at said first and second ends in a resistor string and further adapted to electrically connect said resistor string into a circuit, said interconnection network means directly electrically connecting said first end of each said resistor region to its corresponding isolated region, a value for n being selected of two or more to be sufficiently large to reduce said voltage coefficient of resistance to being less than said selected value.
Claim 2
Dependent Claim 182 words
A monolithic integrated circuit resistor provided in a semiconductor material having a voltage coefficient of resistance which is less than a selected value, said resistor comprising: a set of n isolated regions in said semiconductor material, each of a first conductivity type; a set of n resistor regions, each of a second conductivity type and each being located in a corresponding one of said isolated regions, there being a semiconductor junction occurring between each said resistor region and its corresponding isolated region, each of said resistor regions having a first end and a second end; and an interconnection network means electrically connecting each of said resistor regions in series with one another at said first and second ends in a resistor string and further adapted to electrically connect said resistor string into a circuit, said interconnection network means directly electrically connecting said first end of each said resistor region to its corresponding isolated region, a value for n being selected of two or more to be sufficiently large to reduce said voltage coefficient of resistance to being less than said selected value.
Claim 3
Dependent Claim 46 words
The apparatus of claim 1 wherein said network interconnection means is of aluminum, said direct electrical contact in each of said isolated regions being made through a contact region therein of said first conductivity type but of a higher conductivity than that of said isolated regions.
Claim 4
Dependent Claim 30 words
The apparatus of claim 2 wherein each said resistor region has a resistance value between said first and second ends substantially equal to that of every other said resistor region.
Claim 5
Dependent Claim 39 words
The apparatus of claim 2 wherein each of said isolated regions has a buried layer region provided between it and a substrate on which said isolated regions are formed, said buried layer region being of said first conductivity type.
Claim 6
Dependent Claim 19 words
The apparatus of claim 4 wherein said isolated regions are formed in an epitaxial layer grown on said substrate.
Claim 7
Dependent Claim 46 words
The apparatus of claim 4 wherein said network interconnection means is of aluminum, said direct electrical contact in each of said isolated regions being made through a contact region therein of said first conductivity type but of a higher conductivity than that of said isolated regions.

References Cited (Backward Citations)

US3341754A Cited
US3491325A Cited
US3655457A Cited
US3683306A Cited
US3548269A Cited
US3947866A Cited
US3902926A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1980-07-04 1981-01-03 1981-07-05 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1984-07-04 1985-01-03 1985-07-05 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1988-07-04 1989-01-03 1989-07-05 $7700.00 Window Closed / Lapsed

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