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US3982265A
Expired / Lapsed
US
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Devices containing aluminum-V semiconductor and method for making
Assignee: AT&T Inc
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Filing: 1975-09-19
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Granted: 1976-09-21
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Expires: 1995-09-19
Abstract
Abstract A high efficiency solar cell having n-type aluminum arsenide grown on a p-type gallium arsenide substrate and protected by a layer of anodic oxide. The aluminum arsenide is deposited by vapor phase epitaxy by reacting high purity arsine, hydrogen chloride and aluminum at approximately 1000°C in an all-alumina reactor tube system. The aluminum arsenide layer is protected from deterioration by first anodizing it in pure water and phosphoric acid at pH 2.0 with a current density of 2-8 milliamperes per square centimeter at room temperature. Second, the anodic oxide so formed is annealed at about 450°C for at least twenty minutes in dry nitrogen. The oxide layer also acts as an antireflective coating. A portion of the oxide layer is etched away to expose a region of the aluminum arsenide to which an electrical contact is applied. The other contact is made to the substrate.
Inventors
- 👤 Wilbur Dexter Johnston, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 17:16
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/163; H04; H04B; H04B10/00; H04B10/40; H04B10/43; H10F55/00; H10F55/18; H10F77/00; H10F77/30; H10F77/306; H10F77/311; H10F77/315; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6324; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544; Y10; Y10S; Y10S205/00; Y10S205/923
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
28 words
A p-n junction device comprising: a first layer including III-V semiconductor; a second layer including aluminum-V semiconductor; and a layer of aluminum-V oxide located on said second layer.
Claim 2
Dependent Claim
28 words
A p-n junction device comprising: a first layer including III-V semiconductor; a second layer including aluminum-V semiconductor; and a layer of aluminum-V oxide located on said second layer.
Claim 3
Dependent Claim
28 words
A device as claimed in claim 1 wherein said aluminum-V semiconductor has a Group V constituent comprising arsenic and said first and second layers are substantially lattice matched.
Claim 4
Dependent Claim
15 words
A device as claimed in claim 1 wherein said first layer includes gallium arsenide semiconductor.
Claim 5
Dependent Claim
15 words
A device as claimed in claim 1 wherein said second layer includes aluminum arsenide semiconductor.
Claim 6
Dependent Claim
36 words
A device as claimed in claim 4 wherein said second layer includes aluminum arsenide having an n-type carrier concentration and said first layer has a p-type carrier concentration in a portion adjacent to said second layer.
Claim 7
Dependent Claim
31 words
A device as claimed in claim 5 wherein the carrier concentration in said n-type aluminum arsenide exceeds in magnitude one-half the carrier concentration in the adjacent portion of said first layer.
Claim 8
Dependent Claim
39 words
A photovoltaic device comprising: a first layer including a III-V semiconductor; a second layer of aluminum-V semiconductor of conductivity type opposite to said first layer and disposed adjacent thereto; and a transparent protective coating located on said second layer.
Claim 9
Dependent Claim
39 words
A photovoltaic device comprising: a first layer including a III-V semiconductor; a second layer of aluminum-V semiconductor of conductivity type opposite to said first layer and disposed adjacent thereto; and a transparent protective coating located on said second layer.
Claim 10
Dependent Claim
21 words
A photovoltaic device as claimed in claim 7 wherein said coating is a layer of anodic oxide of said second layer.
Claim 11
Dependent Claim
26 words
A photovoltaic device as claimed in claim 7 wherein said second layer includes aluminum arsenide and said coating is an antireflective layer of anodized aluminum arsenide.
Claim 12
Dependent Claim
59 words
A photovoltaic device as claimed in claim 7 wherein said III-V semiconductor is gallium arsenide having a p-type carrier concentration; said aluminum-V semiconductor is aluminum arsenide having an n-type carrier concentration exceeding 5 × 10 17 and exceeding one half said p-type carrier concentration in magnitude; and said coating is a layer of anodic oxide of said second layer.
Claim 13
Dependent Claim
50 words
In a method of applying a protective coating to a device having an exposed layer of aluminum-V compound the steps of anodically oxidizing said aluminum-V compound in essentially pure water adjusted in pH with phosphoric acid and annealing the anodic oxide so formed at a temperature between 350°C and 520°C.
Claim 14
Dependent Claim
50 words
In a method of applying a protective coating to a device having an exposed layer of aluminum-V compound the steps of anodically oxidizing said aluminum-V compound in essentially pure water adjusted in pH with phosphoric acid and annealing the anodic oxide so formed at a temperature between 350°C and 520°C.
Claim 15
Dependent Claim
39 words
The method of claim 11 wherein said pH is between 1 and 4 and said oxidizing occurs in liquid having a temperature not greater than 70°C and said annealing occurs in an atmosphere inert relative to said anodic oxide.
Claim 16
Dependent Claim
59 words
The method of claim 11 wherein said compound is aluminum arsenide; said pH is between 1.5 and 2.5; said oxidizing occurs at room temperature at a current density between 2 and 8 milliamperes per square centimeter; and said annealing occurs at a temperature between 400° and 450°C for a period between 20 minutes and 2 hours in dry nitrogen.
Claim 17
Dependent Claim
26 words
A device capable of converting radiant energy into electrical energy constructed to include aluminum-V semiconductor having a protective coating produced by the method of claim 11.
References Cited (Backward Citations)
US3322575A
Cited
US3364084A
Cited
US3249473A
Cited
US3218205A
Cited
US3436549A
Cited
US3914465A
Cited
US3890169A
Cited
US3882000A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-09-21 | 1980-03-22 | 1980-09-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-09-21 | 1984-03-22 | 1984-09-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-09-21 | 1988-03-22 | 1988-09-21 | $7700.00 | Window Closed / Lapsed |