US3890169A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming stable native oxide on gallium arsenide based compound semiconductors by combined drying and annealing
Assignee: AT&T Inc
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Filing: 1973-03-26
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Granted: 1975-06-17
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Expires: 1993-03-26
Abstract
Abstract A method of forming a highly stable oxide on gallium arsenide containing compound semiconductors. A native oxide is grown on the surface of the semiconductor and dried during a suitable baking cycle. The oxide is then annealed at a temperature which is significantly higher than that of the baking cycle. This annealing step densifies the oxide and renders it particularly stable and impervious to impurities. In a particular embodiment, a diffusion mask is formed in accordance with the invention to permit selective area diffusion of impurities into a gallium arsenide containing compound semiconductor.
Inventors
- 👤 Bertram Schwartz
- 👤 Stuart Marshall Spitzer
- 👤 Gregory Dyett Weigle
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 13:47
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6312; Y; Y10; Y10S; Y10S148/00; Y10S148/056; Y10S148/065; Y10S148/118; Y10S252/00; Y10S252/95; Y10S252/951
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
99 words
IN A PROCESS FOR FABRICING A COMPOUND SEMICONDUCTOR DEVICE, THE METHOD OF FORMING A STABLE OXIDE ON THE SURFACE OF A SEMICONDUCTOR PORTION COMPRISNG A MATERIAL SELECTED FROM THE GROUP CONSISTING OF GASA, GAAIAS AND GAPAS, COMPRISING THE STEPS OF GROWING AN OXIDE ON THE SURFACE OF THE SAID SEMCONDUCTOR PORTION, DRYING SAID OXIDE BY HEATING TO A TEMPERTURE OOF APPROXIMATELY 150-300*C FOR APPROXIMATELY 1/2 HOUR TO 5 HOURS IN A NONOXIDIZING AMBEINT AND SUBSQUENTLY ANNEALING THE OXIDE BY HEATING TO A TEMPERATURE OF APPROXIMATELY 450*-700* FOR APERIOD OF APPROXIMATELY 15 MINUTES TO 12 HOURS IN A NONOXIDIZING AMBIENT.
Claim 2
Dependent Claim
99 words
IN A PROCESS FOR FABRICING A COMPOUND SEMICONDUCTOR DEVICE, THE METHOD OF FORMING A STABLE OXIDE ON THE SURFACE OF A SEMICONDUCTOR PORTION COMPRISNG A MATERIAL SELECTED FROM THE GROUP CONSISTING OF GASA, GAAIAS AND GAPAS, COMPRISING THE STEPS OF GROWING AN OXIDE ON THE SURFACE OF THE SAID SEMCONDUCTOR PORTION, DRYING SAID OXIDE BY HEATING TO A TEMPERTURE OOF APPROXIMATELY 150-300*C FOR APPROXIMATELY 1/2 HOUR TO 5 HOURS IN A NONOXIDIZING AMBEINT AND SUBSQUENTLY ANNEALING THE OXIDE BY HEATING TO A TEMPERATURE OF APPROXIMATELY 450*-700* FOR APERIOD OF APPROXIMATELY 15 MINUTES TO 12 HOURS IN A NONOXIDIZING AMBIENT.
Claim 3
Dependent Claim
29 words
The method according to claim 1 wherein the oxide is annealed by heating to a temperature of approximately 500*-700*C for a period of approximately 15 minutes to 4 hours.
Claim 4
Dependent Claim
12 words
The method according to claim 1 wherein the nonoxidizing ambient is nitrogen.
Claim 5
Dependent Claim
12 words
The method according to claim 1 wherein the compound semiconductor is GaAs.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-06-16 | 1978-12-16 | 1979-06-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-06-16 | 1982-12-16 | 1983-06-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-06-16 | 1986-12-16 | 1987-06-17 | $7700.00 | Window Closed / Lapsed |