US3436549A
Expired / Lapsed
US
⏱️ 0.0 years remaining
P-n photocell epitaxially deposited on transparent substrate and method for making same
Assignee: Texas Instruments Inc
•
Filing: 1964-11-06
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Granted: 1969-04-01
•
Expires: 1984-11-06
Abstract
No abstract record available.
Inventors
- 👤 George R Pruett
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 11:10
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/221; H10F30/2215; H10F19/00; H10F99/00; Y; Y10; Y10S; Y10S148/00; Y10S148/005; Y10S148/056; Y10S148/064; Y10S148/067; Y10S148/072; Y10S148/12; Y10S148/122; Y10S148/15
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
65 words
THE COMBINATION COMPRISING: (A) A CRYSTALLINE SUBSTRATE SUBSTANTIALLY TRANSPARENT TO A SELECTED WAVELENGTH OF RADIATION; (B) A CRYSTALLINE PHOTOSENSITIVE DEVICE CONTIGUOUS WITH AT LEAST PART OF ONE SURFACE OF SAID SUBSTRATE AND FORMING A MONOCRYSTALLINE EXTENSION OF THE LATTICE OF SAID PART OF SAID SUBSTRATE, SAID PHOTOSENSITIVE DEVICE BEING RESPONSIVE TO SAID SELECTED WAVELENGTH OF RADIATION, AND (C) ELECTRODES ELECTRICALLY CONNECTED WITH SAID PHOTOSENSITIVE DEVICE.
Claim 2
Dependent Claim
65 words
THE COMBINATION COMPRISING: (A) A CRYSTALLINE SUBSTRATE SUBSTANTIALLY TRANSPARENT TO A SELECTED WAVELENGTH OF RADIATION; (B) A CRYSTALLINE PHOTOSENSITIVE DEVICE CONTIGUOUS WITH AT LEAST PART OF ONE SURFACE OF SAID SUBSTRATE AND FORMING A MONOCRYSTALLINE EXTENSION OF THE LATTICE OF SAID PART OF SAID SUBSTRATE, SAID PHOTOSENSITIVE DEVICE BEING RESPONSIVE TO SAID SELECTED WAVELENGTH OF RADIATION, AND (C) ELECTRODES ELECTRICALLY CONNECTED WITH SAID PHOTOSENSITIVE DEVICE.
Claim 3
Independent Claim
95 words
THE METHOD OF MAKING A PHOTOSENSITIVE DEVICE COMPRISING THE STEPS OF: (A) EPITAXIALLY DEPOSITING A MONOCRYSTALLINE LAYER OF SEMICONDUCTOR MATERIAL OF A FIRST CONDUCTIVITY-TYPE ON ONE SURFACE OF A CRYSTALLINE SEMICONDUCTOR SUBSTRATE TO FORM A MONOCRYSTALLINE EXTENSION OF THE LATTICE OF SAID SUBSTRATE, SAID SUBSTRATE HAVING A GREATER BAND GAP THAN SAID LAYER, (B) DIFFUSING CONDUCTIVITY-DETERMINING IMPURITIES OF A SECOND CONDUCTIVITY-TYPE INTO THE EXPOSED SURFACE OF SAID LAYER TO FORM A P-N JUNCTION WITHIN SAID LAYER, AND (C) ATTACHING AN ELECTRODE TO EACH OF THE P-TYPE PORTIONS AND TO THE N-TYPE PORTION OF SAID LAYER.
Claim 4
Independent Claim
95 words
THE METHOD OF MAKING A PHOTOSENSITIVE DEVICE COMPRISING THE STEPS OF: (A) EPITAXIALLY DEPOSITING A MONOCRYSTALLINE LAYER OF SEMICONDUCTOR MATERIAL OF A FIRST CONDUCTIVITY-TYPE ON ONE SURFACE OF A CRYSTALLINE SEMICONDUCTOR SUBSTRATE TO FORM A MONOCRYSTALLINE EXTENSION OF THE LATTICE OF SAID SUBSTRATE, SAID SUBSTRATE HAVING A GREATER BAND GAP THAN SAID LAYER, (B) DIFFUSING CONDUCTIVITY-DETERMINING IMPURITIES OF A SECOND CONDUCTIVITY-TYPE INTO THE EXPOSED SURFACE OF SAID LAYER TO FORM A P-N JUNCTION WITHIN SAID LAYER, AND (C) ATTACHING AN ELECTRODE TO EACH OF THE P-TYPE PORTIONS AND TO THE N-TYPE PORTION OF SAID LAYER.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1972-03-31 | 1972-09-30 | 1973-04-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1976-03-31 | 1976-09-30 | 1977-04-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1980-03-31 | 1980-09-30 | 1981-04-01 | $7700.00 | Window Closed / Lapsed |