Plurality of precise temperature resistors formed in monolithic integrated circuits

Claim 1

A monolithic integrated circuit sensistor provided in a semiconductor material of a selected total resistance having a selected temperature coefficient of resistance and having a voltage coefficient of resistance which is less than a selected value, said sensistor comprising: a set of n isolated regions in said semiconductor material, each of a first conductivity type; a set of n resistor regions, each of a second conductivity type which is determined by ions implanted therein in a selected dose to provide said temperature coefficient of resistance, each of said resistor regions being located in a corresponding one of said isolated regions with a semiconductor junction occurring between each said resistor region and its corresponding isolated region and each of said resistor regions having a first end and a second end; and an interconnection network means electrically connecting each of said resistor regions in series with one another at said first and second ends in a resistor string and further adapted to electrically connect said resistor string into a circuit, said interconnection network means directly electrically connecting said first end of each said resistor region to its corresponding isolated region, a value for n being selected of two or more to be sufficiently large to reduce said voltage coefficient of resistance to being less than said selected value.