Patent US3916034A successfully refreshed from Google Patents.
US3916034A
Expired / Lapsed
US
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Method of transporting substances in a plasma stream to and depositing it on a target
Assignee: Hitachi Ltd
•
Filing: 1972-05-19
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Granted: 1975-10-28
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Expires: 1992-05-19
Abstract
Abstract A method of transporting substances in plasma streams to and depositing them on a target in which the vapors of two or more selected materials are turned into separate ionized plasmas in separate plasma generating chambers, the plasmas are effused from their respective chambers due to the difference in plasma density between the inside and outside of the chamber to form separate plasma streams and the plasma streams are joined to form a single stream which is conducted to the surface of a substrate by means of axial magnetic fields which also serve to converge the plasma streams. In another embodiment, a single stream is branched by a magnetic field to form plural streams which are conducted to different substrates or different points on the same substrate.
Inventors
- 👤 Takashi Tsuchimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 13:56
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32623; C; C23; C23C; C23C14/00; C23C14/04; C23C14/048; C23C14/22; C23C14/24; C23C14/32; C30; C30B; C30B23/00; C30B23/02; C30B23/08; H01J37/32009; H01J37/32357; H01J37/3266; Y; Y10; Y10S; Y10S148/00; Y10S148/006; Y10S148/169; Y10S438/00; Y10S438/935
Claims Analysis
Total Claims: 64
Claim 1
Independent Claim
113 words
A METHOD OF TRANSPORTING MATERIAL TO AND DEPOSITING IT ON A TARGET, COMPRISING THE STEPS OF: TURNING A FIRST MATERIAL AND A SECOND MATERIAL DIFFERENT FROM SAID FIRST MATERIAL INTORESPECTIVE PLASMAS IN RESPECTIVE FIRST AND SECOND PLASMA GENERATOR CHAMBERS, EACH HAVING A SMALL OPENING, EFFUSING SAD PLASMAS FROM SAID FIRST AND SECOND CHAMBERS, FORMING PLASMAS INTO FIRST AND SECOND PLASMAS BEAMS BY MEANS OF AXIAL MAGNETIC FIELDS, DEFLECTING AT LEAST AONE OF SAID FIRST AND SECOND PLASMA BEAMS TO JOIN ONE TO THE OTHER, CONDUCTING THE THUS JOINED PLASMA BEAM TO A DESIRED PORTION OF THE SUFACE OF SAID TARGET TO MAKE THE MATERIAL IN SAID JOINED PLASMA BEAM DEPOSIT ON SAID TARGET.
Claim 2
Independent Claim
113 words
A METHOD OF TRANSPORTING MATERIAL TO AND DEPOSITING IT ON A TARGET, COMPRISING THE STEPS OF: TURNING A FIRST MATERIAL AND A SECOND MATERIAL DIFFERENT FROM SAID FIRST MATERIAL INTORESPECTIVE PLASMAS IN RESPECTIVE FIRST AND SECOND PLASMA GENERATOR CHAMBERS, EACH HAVING A SMALL OPENING, EFFUSING SAD PLASMAS FROM SAID FIRST AND SECOND CHAMBERS, FORMING PLASMAS INTO FIRST AND SECOND PLASMAS BEAMS BY MEANS OF AXIAL MAGNETIC FIELDS, DEFLECTING AT LEAST AONE OF SAID FIRST AND SECOND PLASMA BEAMS TO JOIN ONE TO THE OTHER, CONDUCTING THE THUS JOINED PLASMA BEAM TO A DESIRED PORTION OF THE SUFACE OF SAID TARGET TO MAKE THE MATERIAL IN SAID JOINED PLASMA BEAM DEPOSIT ON SAID TARGET.
Claim 3
Dependent Claim
26 words
A method according to claim 1, wherein the diameter of said joined plasma beam is increased at the immediate front of said surface of said target.
Claim 4
Dependent Claim
45 words
A method according to claim 2, wherein a mask having at least one opening is provided near the surface of said target and the material transported in said joined plasma beam is selectively deposited only on the surface of said target corresponding to said opening.
Claim 5
Dependent Claim
27 words
A method according to claim 1, wherein said target is subjected to heat treatment at deposition of said material in said joined plasma beam on said target.
Claim 6
Dependent Claim
37 words
A method according to claim 1, wherein a voltage is applied between said material in said plasma and said target in such a manner that said plasma is kept positive in potential with respect to said target.
Claim 7
Dependent Claim
38 words
A method according to claim 1, wherein said first material is zinc, said second material is magnesium and said target is an iron plate, and a thin film of zinc and magnesium is formed on said iron plate.
Claim 8
Dependent Claim
41 words
A method according to claim 1, wherein said first material is silicon, said second material is oxygen and said target is a semiconductor plate, and a compound layer of silicon and oxygen is formed on the surface of said semiconductor plate.
Claim 9
Dependent Claim
41 words
A method according to claim 1, wherein said first material is silicon, said second material is nitrogen and said target is a semiconductor plate, and a compound layer of silicon and nitrogen is formed on the surface of said semiconductor plate.
Claim 10
Dependent Claim
80 words
A method according to claim 7, which includes subsequent steps of: turning a metal into plasma in a third plasma generator chamber, effusing the plasma from said third chamber, forming the plasma from said third chamber into a third plasma beam by means of an axial magnetic field, and deflecting said third plasma beam toward said compound layer of silicon and oxygen formed on said semiconductor plate; whereby a thin layer of said metal is formed on said compound layer.
Claim 11
Dependent Claim
40 words
A method according to claim 9, wherein after said metal thin layer is formed, a compound beam of silicon and oxygen is again directed to said metal thin layer to form a further compound layer of silicon and oxygen thereon.
Claim 12
Dependent Claim
38 words
A method according to claim 1, wherein said target is a semiconductor plate, said first material is a metal and said second material is oxygen, whereby a thin layer of metal oxide is formed on said semiconductor plate.
Claim 13
Independent Claim
98 words
A method of transporting material to and depositing it on a target comprising the steps of: turning silicon, oxygen and phosphorus into respective plasmas in respective plasma generating chambers, effusing said respective plasmas from said respective chambers, forming the effused plasmas into plasma beams respectively by means of axial magnetic fields, deflecting at least two of said three plasma beams to join said three beams into a single beam, and conducting the joined plasma beam to the target which is a semiconductor plate; whereby a compound layer of silicon, oxygen and phosphorus is formed on said semiconductor plate.
Claim 14
Independent Claim
98 words
A method of transporting material to and depositing it on a target comprising the steps of: turning silicon, oxygen and phosphorus into respective plasmas in respective plasma generating chambers, effusing said respective plasmas from said respective chambers, forming the effused plasmas into plasma beams respectively by means of axial magnetic fields, deflecting at least two of said three plasma beams to join said three beams into a single beam, and conducting the joined plasma beam to the target which is a semiconductor plate; whereby a compound layer of silicon, oxygen and phosphorus is formed on said semiconductor plate.
Claim 15
Independent Claim
98 words
A method of transporting material to and depositing it on a target comprising the steps of: turning silicon, oxygen and boron into respective plasmas in respective plasma generating chambers, effusing said respective plasmas from said respective chambers, forming the effused plasmas into plasma beams respectively by means of axial magnetic fields, deflectinG at least two of said three plasma beams to join said three beams into a single beam, and conducting the joined plasma beam to the target which is a semiconductor plate; whereby a compound layer of silicon, oxygen and boron is formed on said semiconductor plate.
Claim 16
Independent Claim
98 words
A method of transporting material to and depositing it on a target comprising the steps of: turning silicon, oxygen and boron into respective plasmas in respective plasma generating chambers, effusing said respective plasmas from said respective chambers, forming the effused plasmas into plasma beams respectively by means of axial magnetic fields, deflectinG at least two of said three plasma beams to join said three beams into a single beam, and conducting the joined plasma beam to the target which is a semiconductor plate; whereby a compound layer of silicon, oxygen and boron is formed on said semiconductor plate.
Claim 17
Independent Claim
122 words
A method of transporting material to and depositing it on a target of a semiconductor plate, comprising the steps of: turning silicon, oxygen and an inert gas into respective plasmas in respective plasma generating chambers, effusing said respective plasmas from said respective chambers, forming the effused plasmas into plasma beams respectively by means of axial magnetic fields, directing the plasma beam of said inert gas to a spot on the surface of said semiconductor plate to thereby clean the surface at the spot, and subsequently directing plasmas of silicon and oxygen, after joining both plasma beams into a single beam, to said cleaned spot; whereby a compound layer of silicon and oxygen is formed on the cleaned surface of said semiconductor plate.
Claim 18
Independent Claim
122 words
A method of transporting material to and depositing it on a target of a semiconductor plate, comprising the steps of: turning silicon, oxygen and an inert gas into respective plasmas in respective plasma generating chambers, effusing said respective plasmas from said respective chambers, forming the effused plasmas into plasma beams respectively by means of axial magnetic fields, directing the plasma beam of said inert gas to a spot on the surface of said semiconductor plate to thereby clean the surface at the spot, and subsequently directing plasmas of silicon and oxygen, after joining both plasma beams into a single beam, to said cleaned spot; whereby a compound layer of silicon and oxygen is formed on the cleaned surface of said semiconductor plate.
Claim 19
Independent Claim
119 words
A method of transporting material to and depositing it on a target of a semiconductor plate, comprising the steps of: turning silicon, oxygen and an inert gas into respective plasmas in respective plasma generating chambers, effusing said respective plasmas from said respective chambers, forming the effused plasmas into plasma beams respectively by means of axial magnetic fields, joining the plasma beams of silicon and oxygen into a single beam, directing the joined beam to the semiconductor plate to form a compound layer of silicon and oxygen on said semiconductor plate, and subsequently directing the plasma beam of said inert gas to a part of the deposited compound layer to thereby remove said part of the compound layer by sputtering.
Claim 20
Independent Claim
119 words
A method of transporting material to and depositing it on a target of a semiconductor plate, comprising the steps of: turning silicon, oxygen and an inert gas into respective plasmas in respective plasma generating chambers, effusing said respective plasmas from said respective chambers, forming the effused plasmas into plasma beams respectively by means of axial magnetic fields, joining the plasma beams of silicon and oxygen into a single beam, directing the joined beam to the semiconductor plate to form a compound layer of silicon and oxygen on said semiconductor plate, and subsequently directing the plasma beam of said inert gas to a part of the deposited compound layer to thereby remove said part of the compound layer by sputtering.
Claim 21
Dependent Claim
82 words
A method according to claim 15, which includes subsequent steps of: turning a metal into a plasma in a further plasma generating chamber, effusing the plasma of said metal from the chamber, forming the effused plasma into a plasma beam by means of an axial magnetic field, and directing the plasma beam of said metal to an opening made in said compound layer by said sputtering with the plasma beam of the inert gas to thereby deposit said metal in said opening.
Claim 22
Independent Claim
74 words
A method of transporting material to and depositing it on a substrate comprising the steps of: generating at least two plasma beams of at least one substance; joining together said generated plasma beams to form a joined plasma beam; guiding said joined plasma beam to at least a part of one surface of said substrate; and forming a layer of said at least one substance on said part of one surface of said substrate.
Claim 23
Independent Claim
74 words
A method of transporting material to and depositing it on a substrate comprising the steps of: generating at least two plasma beams of at least one substance; joining together said generated plasma beams to form a joined plasma beam; guiding said joined plasma beam to at least a part of one surface of said substrate; and forming a layer of said at least one substance on said part of one surface of said substrate.
Claim 24
Dependent Claim
18 words
A method according to claim 17, wherein each of said plasma beams is formed of an identical substance.
Claim 25
Dependent Claim
18 words
A method according to claim 17, wherein each of said plasma beams is formed of a different substance.
Claim 26
Dependent Claim
16 words
A method according to claim 19, wherein said layer is a compound of said different substances.
Claim 27
Dependent Claim
13 words
A method according to claim 20, wherein said substrate is a single crystal.
Claim 28
Dependent Claim
20 words
A method according to claim 21, wherein said layer of said compound is a single crystal layer of said compound.
Claim 29
Dependent Claim
15 words
A method according to claim 21, wherein said single crystal substrate is a semiconductor material.
Claim 30
Dependent Claim
38 words
A method according to claim 23, wherein said at least two plasma beams consist of a first and second plasma beams, each of said first and second plasma beams being formed of a respective first and second material.
Claim 31
Dependent Claim
33 words
A method according to claim 24, wherein said first material is the same semiconductor material as said single crystal substrate and said second material is a conductivity determining material for said semiconductor material.
Claim 32
Dependent Claim
17 words
A method according to claim 17, wherein said plasma beams are guided by means of magnetic pipes.
Claim 33
Dependent Claim
26 words
A method according to claim 26, wherein saiD magnetic pipes include at least one bend such that neutral particles existing in said plasma beams are removed.
Claim 34
Dependent Claim
21 words
A method according to claim 17, wherein said joined plasma beam is at a positive potential with respect to said surface.
Claim 35
Dependent Claim
15 words
A method according to claim 28, wherein said positive potential is 400 eV or less.
Claim 36
Dependent Claim
24 words
A method according to claim 17, wherein said step of guiding further includes branching said joined plasma beam into a plurality of plasma beams.
Claim 37
Dependent Claim
42 words
A method according to claim 30, wherein said at least a part of one surface includes a plurality of different surface portions, each of said plurality of plasma beams being guided to a respective one of said plurality of different surface portions.
Claim 38
Dependent Claim
26 words
A method according to claim 30, wherein each of said plurality of plasma beams is further guided to a respective different location at said one surface.
Claim 39
Dependent Claim
18 words
A method according to claim 17, wherein said surface is heated during the step of forming said layer.
Claim 40
Dependent Claim
17 words
A method according to claim 33, wherein said surface is heated to a temperature of about 500*C.
Claim 41
Dependent Claim
20 words
A method according to claim 33, wherein said surface is heated to a temperature of between about 1000* to 1200*C.
Claim 42
Independent Claim
70 words
A method of transporting material to and depositing it on a substrate comprising the steps of: generating at least one plasma beam of at least one substance; guiding said at least one plasma beam to at least one substrate including branching said at least one plasma beam into a plurality of plasma beams; and forming a layer of said at least one substance at each of a plurality of locations.
Claim 43
Independent Claim
70 words
A method of transporting material to and depositing it on a substrate comprising the steps of: generating at least one plasma beam of at least one substance; guiding said at least one plasma beam to at least one substrate including branching said at least one plasma beam into a plurality of plasma beams; and forming a layer of said at least one substance at each of a plurality of locations.
Claim 44
Dependent Claim
38 words
A method according to claim 36, wherein said at least one substrate includes a plurality of different substrates, each of said plurality of plasma beams being further guided to a respective one of said plurality of different substrates.
Claim 45
Dependent Claim
27 words
A method according to claim 36, wherein each of said plurality of plasma beams is guided to a respective different location at said at least one substrate.
Claim 46
Independent Claim
151 words
A method of transporting material to and depositing it on a substrate comprising the steps of: generating a first material into a first plasma in a first plasma generating chamber having a small opening; generating a second material into a second plasma in a second plasma generating chamber having a small opening; effusing each of said generated plasmas through each of said small openings by force of a difference in plasma density; forming each of said effused plasmas into respective plasma beams by means of magnetic pipes provided by axial magnetic fields; transporting said respective plasma beams through said magnetic pipes; joining together said transported plasma beams to form a joined plasma beam; directing said joined plasma beam to at least one part of one surface of said substrate; and forming a layer of said first and second materials on said at least one part of one surface of said substrate.
Claim 47
Independent Claim
151 words
A method of transporting material to and depositing it on a substrate comprising the steps of: generating a first material into a first plasma in a first plasma generating chamber having a small opening; generating a second material into a second plasma in a second plasma generating chamber having a small opening; effusing each of said generated plasmas through each of said small openings by force of a difference in plasma density; forming each of said effused plasmas into respective plasma beams by means of magnetic pipes provided by axial magnetic fields; transporting said respective plasma beams through said magnetic pipes; joining together said transported plasma beams to form a joined plasma beam; directing said joined plasma beam to at least one part of one surface of said substrate; and forming a layer of said first and second materials on said at least one part of one surface of said substrate.
Claim 48
Dependent Claim
16 words
A method according to claim 39, further comprising the step of widening said joined plasma beam.
Claim 49
Dependent Claim
22 words
A method according to claim 40, wherein said step of widening said joined plasma beam includes adjusting the corresponding axial magnetic field.
Claim 50
Dependent Claim
60 words
A method according to claim 39, further comprising the step of branching said joined plasma beam during said step of directing by adjusting the corresponding axial magnetic field, thereby causing widening of the cross-section of said joined plasma beam to allow divergence of separate branches of said plasma beam to be formed by components of the corresponding axial magnetic fields.
Claim 51
Dependent Claim
25 words
A method according to claim 39, further comprising the step of branching at least one of said plasma beams prior to said step of transporting.
Claim 52
Independent Claim
115 words
A method of transporting material to and depositing it on a substrate comprising the steps of: turning a first and a second material into respective plasmas respectively in a first and a sEcond chamber, each of said chambers having a small opening; effusing each of said respective plasmas through each of said small openings; forming each of said respective plasmas into respective plasma beams by means of axial magnetic fields; joining together said respective plasma beams to form a joined plasma beam; directing said joined plasma beam to the surface of a single crystal substrate; and forming a single crystal of a compound consisting of said first and second materials on said single crystal substrate.
Claim 53
Independent Claim
115 words
A method of transporting material to and depositing it on a substrate comprising the steps of: turning a first and a second material into respective plasmas respectively in a first and a sEcond chamber, each of said chambers having a small opening; effusing each of said respective plasmas through each of said small openings; forming each of said respective plasmas into respective plasma beams by means of axial magnetic fields; joining together said respective plasma beams to form a joined plasma beam; directing said joined plasma beam to the surface of a single crystal substrate; and forming a single crystal of a compound consisting of said first and second materials on said single crystal substrate.
Claim 54
Dependent Claim
24 words
A method according to claim 44, wherein said single crystal substrate is GaAs, said first material is gallium and said second material is arsenic.
Claim 55
Dependent Claim
41 words
A method according to claim 44, wherein said single crystal substrate is a semiconductor, said first material being the same semiconductor material as said substrate, and said second material being one for determining the conductivity of said semiconductor when added thereto.
Claim 56
Dependent Claim
32 words
A method according to claim 44, wherein said substrate is subjected to heat treatment at a temperature higher than 500* when a single crystal of said materials is grown on said substrate.
Claim 57
Dependent Claim
38 words
A method according to claim 44, wherein a predetermined voltage is applied between each of said plasmas and said substrate in such a manner that each of said plasmas is kept more positive than said substrate in potential.
Claim 58
Dependent Claim
28 words
A method according to claim 44, wherein a mask having at least one opening of a desired pattern is disposed between said joined plasma beam and said substrate.
Claim 59
Dependent Claim
21 words
A method according to claim 49, wherein said mask is a SiO2 layer formed directly on the surface of said substrate.
Claim 60
Independent Claim
113 words
A method of transporting material to and depositing it on a substrate comprising the steps of: turning silicon, oxygen and an impurity material into respective plasmas respectively in first, second and third plasma generating chambers, each of said chambers having a small opening; effusing each of said respective plasmas through each of said small openings; forming each of said respectively effused plasmas into respective plasma beams by means of axial magnetic fields; joining together said plasma beams to form a joined plasma beam; directing said joined plasma beam to the surface of the substrate; and forming a compound layer of silicon and oxygen containing said impurity material on said surface of the substrate.
Claim 61
Independent Claim
113 words
A method of transporting material to and depositing it on a substrate comprising the steps of: turning silicon, oxygen and an impurity material into respective plasmas respectively in first, second and third plasma generating chambers, each of said chambers having a small opening; effusing each of said respective plasmas through each of said small openings; forming each of said respectively effused plasmas into respective plasma beams by means of axial magnetic fields; joining together said plasma beams to form a joined plasma beam; directing said joined plasma beam to the surface of the substrate; and forming a compound layer of silicon and oxygen containing said impurity material on said surface of the substrate.
Claim 62
Dependent Claim
14 words
A method according to claim 51, wherein said substrate is subjected to heat treatment.
Claim 63
Dependent Claim
22 words
A method according to claim 51, wherein said compound layer is a single crystal of silicon and oxygen containing said impurity material.
Claim 64
Dependent Claim
16 words
A method according to claim 51, wherein said compound layer is formed to a predetermined thickness.
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