Patent US3340601A successfully refreshed from Google Patents.
US3340601A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Alloy diffused transistor
Assignee: RTX Corp
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Filing: 1963-07-17
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Granted: 1967-09-12
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Expires: 1983-07-17
Abstract
No abstract record available.
Inventors
- 👤 Domenick J Garibotti
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 12:54
CPC Classifications
H; H10; H10P; H10P50/00; H10D; H10D10/00; H10P32/00; H10P32/10; H10P32/16; H10P34/00; H10P95/00; H10P95/50; Y; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904; Y10S117/905
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
163 words
A METHOD OF FABRICATING A SEMICONDUCTOR DEVICE COMPRISING: DIRECTING AN INTENSE BEAM OF CHARGED PARTICLES AT A DISCRETE AREA ON THE SURFACE OF A BODY OF HOST SEMICONDUCTOR MATERIAL RICH IN AN IMPURITY OF A FIRST CONDUCTIVE TYPE, ADJUSTING THE POWER DENSITY OF THE BEAM OF CHARGED PARTICLES TO A VALUE THAT WILL PERMIT THE PARTICLES TO PENTRATE INTO THE HOST MATERIAL AND CAUSE FUSION THEREOF IN A ZONE HAVING A DEPTH GREATER THAN ITS WIDTH, DEFLECTING THE BEAM OF CHARGED PARTICLES ACROSS THE BODY OF HOST MATERIAL IN ACCORDANCE WITH A DESIRED PATTERN TO FORM A FUSION AREA HAVING THE DESIRED SURFACE PATTERN, ADDING AN IMPURITY OF A SECOND CONDUCTIVE TYPE TO THE FUSED ZONE UNTIL IT BECOMES DEGENERATE, AND HEATING THE BODY OF SEMICONDUCTOR MATERIAL TO CAUSE SECOND TYPE IMPURITY ATOMS TO DIFFUSE OUT OF THE FUSION ZONE INTO THE HOST MATERIAL UNTIL A DIFFUSION JUNCTION HAS BEEN ACHIEVED IN A LIMITED REGION OF THE HOST MATERIAL SURROUNDING THE FUSION ZONE.
Claim 2
Independent Claim
163 words
A METHOD OF FABRICATING A SEMICONDUCTOR DEVICE COMPRISING: DIRECTING AN INTENSE BEAM OF CHARGED PARTICLES AT A DISCRETE AREA ON THE SURFACE OF A BODY OF HOST SEMICONDUCTOR MATERIAL RICH IN AN IMPURITY OF A FIRST CONDUCTIVE TYPE, ADJUSTING THE POWER DENSITY OF THE BEAM OF CHARGED PARTICLES TO A VALUE THAT WILL PERMIT THE PARTICLES TO PENTRATE INTO THE HOST MATERIAL AND CAUSE FUSION THEREOF IN A ZONE HAVING A DEPTH GREATER THAN ITS WIDTH, DEFLECTING THE BEAM OF CHARGED PARTICLES ACROSS THE BODY OF HOST MATERIAL IN ACCORDANCE WITH A DESIRED PATTERN TO FORM A FUSION AREA HAVING THE DESIRED SURFACE PATTERN, ADDING AN IMPURITY OF A SECOND CONDUCTIVE TYPE TO THE FUSED ZONE UNTIL IT BECOMES DEGENERATE, AND HEATING THE BODY OF SEMICONDUCTOR MATERIAL TO CAUSE SECOND TYPE IMPURITY ATOMS TO DIFFUSE OUT OF THE FUSION ZONE INTO THE HOST MATERIAL UNTIL A DIFFUSION JUNCTION HAS BEEN ACHIEVED IN A LIMITED REGION OF THE HOST MATERIAL SURROUNDING THE FUSION ZONE.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-09-11 | 1971-03-13 | 1971-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-09-11 | 1975-03-13 | 1975-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-09-11 | 1979-03-13 | 1979-09-12 | $7700.00 | Window Closed / Lapsed |