US3080481A
Expired / Lapsed
US
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Method of making transistors
Assignee: Sprague Electric Co
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Filing: 1959-04-17
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Granted: 1963-03-05
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Expires: 1979-04-17
Abstract
No abstract record available.
Inventors
- 👤 Robinson Preston
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 16:25
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P95/00; H10W; H10W74/00; H10W74/40; H10W74/47; Y; Y10; Y10S; Y10S148/00; Y10S148/169
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
94 words
A PROCESS FOR FORMIMG A SEMI-CONDUCTIVE BODY COMPRISING THE STEPS OF PROJECTING A FOCUSED BEAM OF ELECTRONS AGAINST A PORTION OF THE BODY TO GENERATE X-RAYS AND CAUSE THE PORTION TO BECOME HEATED AND TO BE VOLATILIZED AWAY, INTRODUCING A POLYMERIZABLE VAPOR INTO THE REGION OF THE SEMICONDUCTIVE BODY, POLYMERIZING A FILM OF THE VAPOR ON THE REMAINING SURFACE BY SAID VOLATILIZATION, MEASURING THE INTERSITY OF THE X-RAYS THAT ARE GENERATED IN THE SAME DIRECTION THAT THE BEAM OF ELECTRONS IS PROJECTED, AND CONTROLLING THE BEAM PROJECTION BY THE MEASURED INTENSITY OF THE X-RAYS.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1966-03-04 | 1966-09-03 | 1967-03-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1970-03-04 | 1970-09-03 | 1971-03-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1974-03-04 | 1974-09-03 | 1975-03-05 | $7700.00 | Window Closed / Lapsed |