Patent US2421106A successfully refreshed from Google Patents.
US3179542A
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US
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Method of making semiconductor devices
Assignee: RCA Corp
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Filing: 1961-10-24
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Granted: 1965-04-20
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Expires: 1981-10-24
Abstract
No abstract record available.
Inventors
- 👤 Richard E Quinn
- 👤 Square Hamilton
- 👤 Joseph H Mccusker
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-22 21:55
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D8/00; H10D8/70; H10D84/00; H10D84/01; H10D86/00; H10D86/01; H10P; H10P34/00; H10P34/40; H10P50/00; H10P95/00; H10P95/50; Y; Y10; Y10S; Y10S148/00; Y10S148/02; Y10S148/071; Y10S148/134
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
110 words
THE METHOD OF FABRICATING A RECTIFYING CONTACT TO A GIVEN CONDUCTIVITY TYPE CRYSTALLINE SEMICONDUCTOR WAFER, COMPRISING THE STEPS OF POSITIONING SAID WAFER UPON A METALLIC PLATE, SAID PLATE INCLUDING AT LEAST ONE SUBSTANCE CAPABLE OF IMPARTING OPPOSITE TYPE CONDUCITIVITY TO SAID SEMICONDUCTOR WAFER; UTILIZING A PULSED ELECTRON BEAM TO DRILL A WELL TRANSVERSELY THROUGH SAID WAFER AND PARTLY THROUGH SAID PLATE TO VAPORIZE A PORTION OF SAID WAFER AND MELT A PORTION OF SAID PLATE SO THAT THE MOLTEN PORTION OF SAID PLATE RISES WITHIN SAID WELL; COOLING SAID MOLTEN PORTION TO SOLIDIFY SAID MOLTEN PORTION WITHIN SAID WELL IN SAID SEMICONDUCTIVE WAFER; AND REMOVING SAID WAFER FROM SAID PLATE.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1968-04-19 | 1968-10-19 | 1969-04-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1972-04-19 | 1972-10-19 | 1973-04-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1976-04-19 | 1976-10-19 | 1977-04-20 | $7700.00 | Window Closed / Lapsed |