US5141460A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a field emission electron source employing a diamond coating
Assignee: Motorola Solutions Inc
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Filing: 1991-08-20
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Granted: 1992-08-25
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Expires: 2011-08-20
Abstract
Abstract A field emission electron device employing an electron emitter comprised of a coating of diamond material disposed on a surface of a selectively formed conductive/semiconductive electrode and a method of forming the device including a step wherein carbon ions are implanted at a surface of a conductive/semiconductive electrode to function as nucleation sites for the diamond formation.
Inventors
- 👤 James E. Jaskie
- 👤 Robert C. Kane
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 07:01
CPC Classifications
B; B82; B82Y; B82Y15/00; H; H01; H01J; H01J9/00; H01J9/02; H01J9/022; H01J9/025; H01J1/00; H01J1/02; H01J1/30; H01J1/304; H01J1/3042; H01J2201/00; H01J2201/30; H01J2201/304; H01J2201/30446; H01J2201/30453; H01J2201/30457
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
82 words
A method for forming a field emission electron emitter comprising the steps of: providing a selectively shaped conductive/semiconductive electrode having a major surface; implanting ions, as nucleation sites, onto at least a part of the major surface of the conductive/semiconductive electrode; and growing diamond crystallites preferentially at at least some of the nucleation sites, such that an electron emitter comprising a coating of diamond disposed on at least a part of the major surface of the selectively shaped conductive/semiconductive electrode is formed.
Claim 2
Independent Claim
82 words
A method for forming a field emission electron emitter comprising the steps of: providing a selectively shaped conductive/semiconductive electrode having a major surface; implanting ions, as nucleation sites, onto at least a part of the major surface of the conductive/semiconductive electrode; and growing diamond crystallites preferentially at at least some of the nucleation sites, such that an electron emitter comprising a coating of diamond disposed on at least a part of the major surface of the selectively shaped conductive/semiconductive electrode is formed.
Claim 3
Dependent Claim
15 words
The method of claim 1 wherein the step of implanting ions includes implanting carbon ions.
Claim 4
Dependent Claim
19 words
The method of claim 1 wherein the step of providing a conductive/semiconductive electrode includes anisotropic etching of semiconductor material.
Claim 5
Independent Claim
117 words
A method for forming a field emission electron emitter comprising the steps of: providing a supporting substrate; depositing a layer of patternable material on the supporting substrate; patterning the layer of patternable material to provide an aperture therethrough; providing a selectively shaped conductive/semiconductive electrode disposed substantially within the aperture and on the supporting substrate; implanting ions, as nucleation sites, onto at least a part of the conductive/semiconductive electrode; removing substantially all of the layer of patternable material; and growing diamond crystallites preferentially at at least some of the nucleation sites, such that an electron emitter is formed comprising a coating of diamond disposed on at least a part of the surface of the selectively shaped conductive/semiconductive electrode.
Claim 6
Independent Claim
117 words
A method for forming a field emission electron emitter comprising the steps of: providing a supporting substrate; depositing a layer of patternable material on the supporting substrate; patterning the layer of patternable material to provide an aperture therethrough; providing a selectively shaped conductive/semiconductive electrode disposed substantially within the aperture and on the supporting substrate; implanting ions, as nucleation sites, onto at least a part of the conductive/semiconductive electrode; removing substantially all of the layer of patternable material; and growing diamond crystallites preferentially at at least some of the nucleation sites, such that an electron emitter is formed comprising a coating of diamond disposed on at least a part of the surface of the selectively shaped conductive/semiconductive electrode.
Claim 7
Dependent Claim
15 words
The method of claim 4 wherein the step of implanting ions includes implanting carbon ions.
Claim 8
Dependent Claim
28 words
The method of claim 4 wherein the step of providing a conductive/semiconductive electrode includes the step of forming the electrode by a substantially normal deposition of conductive/semiconductive material.
Claim 9
Independent Claim
176 words
A method for forming a field emission device comprising the steps of: providing a supporting substrate; depositing a layer of insulator material on the supporting substrate; depositing a conductive/semiconductive layer on the layer of insulator material; providing a layer of patternable material disposed on the conductive/semiconductive layer; patterning the layer of patternable material to provide a patterned aperture therethrough; selectively etching an etched aperture through the conductive/semiconductive layer and the layer of insulator material, which etched aperture substantially conforms to the patterned aperture in the patternable material; providing a selectively shaped conductive/semiconductive electrode, having a surface, disposed substantially within the etched aperture and on the supporting substrate; removing substantially all of the patternable material; implanting ions, as nucleation sites, onto at least a part of the surface of the conductive/semiconductive electrode; and growing diamond crystallites preferentially at at least some of the nucleation sites, such that a field emission device is formed having an electron emitter comprising a coating of diamond disposed on at least a part of the surface of the selectively shaped conductive/semiconductive electrode.
Claim 10
Independent Claim
176 words
A method for forming a field emission device comprising the steps of: providing a supporting substrate; depositing a layer of insulator material on the supporting substrate; depositing a conductive/semiconductive layer on the layer of insulator material; providing a layer of patternable material disposed on the conductive/semiconductive layer; patterning the layer of patternable material to provide a patterned aperture therethrough; selectively etching an etched aperture through the conductive/semiconductive layer and the layer of insulator material, which etched aperture substantially conforms to the patterned aperture in the patternable material; providing a selectively shaped conductive/semiconductive electrode, having a surface, disposed substantially within the etched aperture and on the supporting substrate; removing substantially all of the patternable material; implanting ions, as nucleation sites, onto at least a part of the surface of the conductive/semiconductive electrode; and growing diamond crystallites preferentially at at least some of the nucleation sites, such that a field emission device is formed having an electron emitter comprising a coating of diamond disposed on at least a part of the surface of the selectively shaped conductive/semiconductive electrode.
Claim 11
Dependent Claim
15 words
The method of claim 7 wherein the step of implanting ions includes implanting carbon ions.
Claim 12
Dependent Claim
28 words
The method of claim 7 wherein the step of providing a selectively shaped conductive/semiconductive electrode includes forming a conductive/semiconductive electrode by a substantially normal deposition of conductive/semiconductive material.
Claim 13
Dependent Claim
134 words
The method of claim 7 wherein the step of implanting ions included the steps of: providing ion implantation apparatus; disposing the conductive/semiconductive electrode in the ion implantation apparatus and implanting ions, as nucleation sites, onto at least a part of the surface of the conductive/semiconductive electrode; providing a first voltage source operably coupled between the supporting substrate and the ion implantation apparatus such that an ion accelerating electric field is provided substantially between the ion implantation apparatus and the conductive/semiconductive electrode; and providing a second voltage source operably coupled between the supporting substrate and the conductive/semiconductive layer such that an ion repelling electric field is provided substantially between the conductive/semiconductive layer and the conductive/semiconductive electrode, such that at least some of the ions are preferentially directed to a preferred part of the conductive/semiconductive electrode.
Claim 14
Dependent Claim
78 words
The method of claim 7 and further including the steps of: depositing a layer of material, subsequent to the removal of the patternable material, onto the conductive/semiconductive layer by means of low angle deposition such that the etched aperture is selectively partially closed; and removing substantially all of the layer of material subsequent to the implantation of the ions, such that carbon ions are substantially selectively implanted onto a preferred part of the surface of the conductive/semiconductive electrode.
Claim 15
Independent Claim
180 words
A method for forming a field emission device comprising the steps of: providing a supporting substrate; depositing a layer of insulator material on the supporting substrate; depositing a conductive/semiconductive layer on the layer of insulator material; providing a layer of patternable material disposed on the conductive/semiconductive layer; patterning the layer of patternable material to provide at least one patterned aperture therethrough; selectively etching an etched aperture through the conductive/semiconductive layer and the layer of insulator material, which etched aperture substantially conforms to the patterned aperture in the patternable material; providing a selectively shaped conductive/semiconductive electrode, having a surface, disposed substantially within the etched aperture and on the supporting substrate; implanting ions, as nucleation sites, onto at least a part of the surface of the conductive/semiconductive electrode; removing substantially all of the layer of patternable material; and growing diamond crystallites preferentially at at least some of the nucleation sites, such that a field emission device is formed having an electron emitter comprising a coating of diamond disposed on at least a part of the surface of the selectively shaped conductive/semiconductive electrode.
Claim 16
Independent Claim
180 words
A method for forming a field emission device comprising the steps of: providing a supporting substrate; depositing a layer of insulator material on the supporting substrate; depositing a conductive/semiconductive layer on the layer of insulator material; providing a layer of patternable material disposed on the conductive/semiconductive layer; patterning the layer of patternable material to provide at least one patterned aperture therethrough; selectively etching an etched aperture through the conductive/semiconductive layer and the layer of insulator material, which etched aperture substantially conforms to the patterned aperture in the patternable material; providing a selectively shaped conductive/semiconductive electrode, having a surface, disposed substantially within the etched aperture and on the supporting substrate; implanting ions, as nucleation sites, onto at least a part of the surface of the conductive/semiconductive electrode; removing substantially all of the layer of patternable material; and growing diamond crystallites preferentially at at least some of the nucleation sites, such that a field emission device is formed having an electron emitter comprising a coating of diamond disposed on at least a part of the surface of the selectively shaped conductive/semiconductive electrode.
Claim 17
Dependent Claim
15 words
The method of claim 12 wherein the step of implanting ions includes implanting carbon ions.
Claim 18
Dependent Claim
27 words
The method of claim 12 wherein the step of providing a selectively shaped conductive/semiconductive electrode includes forming the electrode by a substantially normal deposition of conductive/semiconductive material.
Claim 19
Dependent Claim
134 words
The method of claim 12 wherein the step of implanting ions included the steps of: providing ion implantation apparatus; disposing the conductive/semiconductive electrode in the ion implantation apparatus and implanting ions, as nucleation sites, onto at least a part of the surface of the conductive/semiconductive electrode; providing a first voltage source operably coupled between the supporting substrate and the ion implantation apparatus such that an ion accelerating electric field is provided substantially between the ion implantation apparatus and the conductive/semiconductive electrode; and providing a second voltage source operably coupled between the supporting substrate and the conductive/semiconductive layer such that an ion repelling electric field is provided substantially between the conductive/semiconductive layer and the conductive/semiconductive electrode, such that at least some of the ions are preferentially directed to a preferred part of the conductive/semiconductive electrode.
Claim 20
Dependent Claim
77 words
The method of claim 12 and further including the steps of: depositing a layer of material, subsequent to the removal of the patternable material, onto the conductive/semiconductive layer by means of low angle deposition such that the at least one aperture is selectively partially closed; and removing substantially all of the layer of material subsequent to the implantation of the ions, such that carbon ions are substantially selectively implanted onto a preferred part of the conductive/semiconductive electrode.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-08-25 | 1996-02-24 | 1996-08-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-08-25 | 2000-02-24 | 2000-08-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-08-25 | 2004-02-24 | 2004-08-25 | $7700.00 | Window Closed / Lapsed |