Patent US1942414A successfully refreshed from Google Patents.
US4615904A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Maskless growth of patterned films
Assignee: Massachusetts Institute of Technology
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Filing: 1985-04-01
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Granted: 1986-10-07
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Expires: 2005-04-01
Abstract
Abstract A method of growing patterned films on a substrate in a deposition chamber without masking, the method consisting of the following steps: pressurizing the chamber with a fluid medium to form a thin absorption layer on the substrate; evacuating the chamber to remove excess fluid medium; prenucleating portions of the substrate with a focused energy beam; repressurizing the chamber with a fluid medium; and inducing deposition of material from the fluid medium and thereby growing a patterned film with deposition occuring primarily on the prenucleated portions of the substrate.
Inventors
- 👤 Daniel J. Ehrlich
- 👤 Thomas F. Deutsch
- 👤 Richard M. Osgood
- 👤 Howard Schlossberg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 12:28
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/48; C23C16/483; C23C16/04; C23C16/047; H; H10; H10P; H10P34/00; H10P34/40; H10P34/42
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
123 words
A method for depositing a patterned film onto a substrate in a deposition chamber, the method comprising: a. introducing a dissociable fluid medium into said chamber and depositing therefrom an absorbed layer of the dissociable fluid medium onto said substrate; b. removing any excess amounts of said dissociable fluid medium from said chamber to render the chamber substantially free of said dissociable fluid medium except for said absorbed layer formed on said substrate; c. focusing a beam source of energy onto said substrate to dissociate portions of said absorbed layer to produce an initial distribution of deposited nuclei on the substrate and thereby define prenucleation regions for further deposition; and d. introducing atoms into said chamber for selective deposition onto said prenucleated regions.
Claim 2
Independent Claim
123 words
A method for depositing a patterned film onto a substrate in a deposition chamber, the method comprising: a. introducing a dissociable fluid medium into said chamber and depositing therefrom an absorbed layer of the dissociable fluid medium onto said substrate; b. removing any excess amounts of said dissociable fluid medium from said chamber to render the chamber substantially free of said dissociable fluid medium except for said absorbed layer formed on said substrate; c. focusing a beam source of energy onto said substrate to dissociate portions of said absorbed layer to produce an initial distribution of deposited nuclei on the substrate and thereby define prenucleation regions for further deposition; and d. introducing atoms into said chamber for selective deposition onto said prenucleated regions.
Claim 3
Dependent Claim
22 words
The method of claim 1 wherein the focusing step further includes focusing ultraviolet laser energy onto said substrate to define prenucleation regions.
Claim 4
Dependent Claim
28 words
The method of claim 1 wherein the focusing step further includes focusing a beam source of frequency doubled Ar-ion laser energy onto said substrate to define prenucleation regions.
Claim 5
Dependent Claim
22 words
The method of claim 1 wherein the focusing step further includes focusing a particle beam onto said substrate to define prenucleation regions.
Claim 6
Dependent Claim
22 words
The method of claim 1 wherein the focusing step further includes focusing an electron beam onto said substrate to define prenucleation regions.
Claim 7
Dependent Claim
19 words
The method of claim 1 wherein the step of depositing an absorbed layer further includes depositing gas-phase organometallic molecules.
Claim 8
Dependent Claim
20 words
The method of claim 1 wherein the step of depositing an absorbed layer further includes depositing gas-phase metallic halide molecules.
Claim 9
Dependent Claim
20 words
The method of claim 1 wherein the step of depositing an absorbed layer further includes depositing gas-phase metallic hydride molecules.
Claim 10
Dependent Claim
18 words
The method of claim 1 wherein the step of depositing an absorbed layer further includes depositing metallic alkyls.
Claim 11
Dependent Claim
18 words
The method of claim 1 wherein the step of depositing an absorbed layer further includes depositing semiconductor alkyls.
Claim 12
Dependent Claim
18 words
The method of claim 1 wherein the step of depositing an absorbed layer further includes depositing metallic carbonyls.
Claim 13
Dependent Claim
45 words
The method of claim 1 wherein the step of depositing an absorbed layer further includes depositing an alkyl compound of the formula: M.sub.n (CH.sub.3).sub.m where M is at least one metal or semiconductor chosen from the group of B, Cd, Zn, Ge, Bi or Al.
Claim 14
Dependent Claim
21 words
The method of claim 1 wherein the step of introducing atoms for selective deposition further comprises introducing atoms by vacuum deposition.
Claim 15
Dependent Claim
26 words
The method of claim 13 wherein the energy source is a laser source and the flood illumination means comprises a means of defocusing the laser source.
Claim 16
Dependent Claim
16 words
The method of claim 13 wherein the flood illumination means comprises a separate laser illuminating source.
Claim 17
Dependent Claim
16 words
The method of claim 13 wherein the flood illuminating means comprises a separate non-coherent illuminating source.
Claim 18
Dependent Claim
29 words
The method of claim 13 wherein said second dissociable fluid medium of said atom deposition means has the same composition as the absorbed layer initially deposited on said substrate.
Claim 19
Dependent Claim
37 words
The method of claim 13 wherein said second dissociable fluid medium of said atom deposition source is a fluid medium which is dissociable by said beam energy to deposit a pattern of catalyticly-active material on said substrate.
Claim 20
Dependent Claim
41 words
The method of claim 13 wherein said means for introducing a fluid medium into said chamber further comprises a means for introducing a fluid medium which is dissociable by a said beam energy to deposit a dopant pattern on said substrate.
Claim 21
Dependent Claim
57 words
The method of claim 1 wherein the step of introducing atoms for selective deposition further includes introducing a second dissociable fluid medium into said deposition chamber, and flood illuminating the substrate, whereby a pattern can be grown upon said substrate without masks by dissociation of said fluid medium and deposition of dissociated atoms onto said prenucleated regions.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-10-06 | 1990-04-07 | 1990-10-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-10-06 | 1994-04-07 | 1994-10-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-10-06 | 1998-04-07 | 1998-10-07 | $7700.00 | Window Closed / Lapsed |