US4359485A
Expired / Lapsed
US
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Radiation induced deposition of metal on semiconductor surfaces
Assignee: AT&T Inc
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Filing: 1981-05-01
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Granted: 1982-11-16
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Expires: 2001-05-01
Abstract
Abstract A metal layer is formed on a surface of a Group III-V compound semiconductor by placing the surface in contact with a metal-containing solution and directing laser radiation through the solution. The radiation has a wavelength which is absorbed in the surface, thereby thermally inducing a chemical reaction between the surface and the solution and causing metal from the solution to be deposited on the surface. Specific examples of the deposition of Pt, Au and Zn on InP and GaAs are described.
Inventors
- 👤 Vincent M. Donnelly
- 👤 Robert F. Karlicek, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 14:17
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/46; C; C23; C23C; C23C18/00; C23C18/14; C23C18/143; Y; Y10; Y10S; Y10S148/00; Y10S148/094; Y10S148/14
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
89 words
A method of forming a metal layer on a surface of a Group III-V compound semiconductor body comprising the steps of (a) placing the surface in contact with a metal-containing solution; and (b) directing optical radiation through the solution to the surface, the radiation having a wavelength which is absorbed in the surface and a power density sufficient to thermally decompose said surface, thereby to thermally induce a chemical reaction between the solution and the surface and to cause metal from the solution to be deposited on the surface.
Claim 2
Independent Claim
89 words
A method of forming a metal layer on a surface of a Group III-V compound semiconductor body comprising the steps of (a) placing the surface in contact with a metal-containing solution; and (b) directing optical radiation through the solution to the surface, the radiation having a wavelength which is absorbed in the surface and a power density sufficient to thermally decompose said surface, thereby to thermally induce a chemical reaction between the solution and the surface and to cause metal from the solution to be deposited on the surface.
Claim 3
Dependent Claim
18 words
The method of claim 1 wherein the radiation has a wavelength which is essentially transparent in the solution.
Claim 4
Dependent Claim
24 words
The method of claim 1 wherein the solution contains metals selected from the group consisting of platinum, gold, nickel and zinc and combinations thereof.
Claim 5
Independent Claim
24 words
The method of claims 1, 2 or 3 wherein the body comprises a semiconductor material selected from the group consisting of InP and GaAs.
Claim 6
Dependent Claim
26 words
The method of claim 1 wherein the solution comprises a solvent and a solute dissolved in the solvent and wherein the solute comprises a metal salt.
Claim 7
Dependent Claim
18 words
The method of claim 5 wherein the solvent is selected from the group consisting of water and methanol.
Claim 8
Dependent Claim
32 words
The method of claim 6 wherein the solute is selected from the group consisting of H 2 PtCl 6 , HAuCl 4 , NiSO 4 , and ZnCl 2 and combinations thereof.
Claim 9
Dependent Claim
22 words
The method of claim 7 wherein the metal salt has a concentration in the solution of approximately 0.01 M to 1.0 M.
Claim 10
Independent Claim
27 words
The method of claims 1, 2, 3, 5, 6, 7 or 8 wherein in step (b) pulsed laser radiation is directed through the solution to the surface.
Claim 11
Dependent Claim
21 words
The method of claim 9 wherein the radiation has a power which is greater than approximately 10 7 N/cm 2 .
Claim 12
Dependent Claim
19 words
The method of claim 10 wherein the wavelength of the laser radiation is between approximately 580 and 720 nm.
Claim 13
Independent Claim
27 words
The method of claims 1, 2, 3, 5, 6, 7 or 8 wherein the step (b) continuous wave-laser radiation is directed through the solution to the surface.
Claim 14
Independent Claim
113 words
A method of forming a metal layer on a surface of a Group III-V compound semiconductor body including the steps of placing the surface in contact with a solution comprising a solvent selected from the group consisting of water and methanol and a solute comprising a metal salt, and directing laser radiation through the solution to the surface, the radiation having a wavelength which is essentially transparent in the solution but is absorbed in the surface, and the intensity of the radiation being sufficient to thermally decompose said surface thereby to induce a chemical reaction between the solution and the surface and cause metal from the solute to be deposited on the surface.
Claim 15
Independent Claim
113 words
A method of forming a metal layer on a surface of a Group III-V compound semiconductor body including the steps of placing the surface in contact with a solution comprising a solvent selected from the group consisting of water and methanol and a solute comprising a metal salt, and directing laser radiation through the solution to the surface, the radiation having a wavelength which is essentially transparent in the solution but is absorbed in the surface, and the intensity of the radiation being sufficient to thermally decompose said surface thereby to induce a chemical reaction between the solution and the surface and cause metal from the solute to be deposited on the surface.
Claim 16
Independent Claim
101 words
A method of forming a metal layer on a surface of a Group III-V compound semiconductor body comprising the steps of (a) placing the surface in contact with a metal-containing solution which by itself causes essentially no deposition of metal on said surface, and (b) directing optical radiation through the solution to the surface, the radiation having a wavelength which is absorbed in the surface and a power density sufficient to thermally decompose said surface, thereby to thermally induce a chemical reaction between the solution and the surface and to cause metal from the solution to be deposited on the surface.
Claim 17
Independent Claim
101 words
A method of forming a metal layer on a surface of a Group III-V compound semiconductor body comprising the steps of (a) placing the surface in contact with a metal-containing solution which by itself causes essentially no deposition of metal on said surface, and (b) directing optical radiation through the solution to the surface, the radiation having a wavelength which is absorbed in the surface and a power density sufficient to thermally decompose said surface, thereby to thermally induce a chemical reaction between the solution and the surface and to cause metal from the solution to be deposited on the surface.
References Cited (Backward Citations)
US2723919A
Cited
US4009297A
Cited
US4239789A
Cited
US4264421A
Cited
US4273594A
Cited
US4321283A
Cited
US4297393A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-11-15 | 1986-05-17 | 1986-11-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-11-15 | 1990-05-17 | 1990-11-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-11-15 | 1994-05-17 | 1994-11-16 | $7700.00 | Window Closed / Lapsed |