US4597844A — Coating film and method and apparatus for produci…

Claim 1

Independent Claim 111 words

An amorphous carbon coating film produced by sputtering a graphite target electrode in an atmosphere gas selected from the group consisting of hydrogen, fluorine and a mixture of hydrogen and fluorine having a pressure of 6.665 to 666.5 Pa (0.05 to 5.0 Torr) while maintaining a temperature of a deposition substrate between a room temperature and 100° C. and a relative current density which is a ratio of a plate current value to an area of target electrode for said graphite target electrode and an anode between 11.3 and 14.7 mA/cm 2 whereby the value of H/C or (H+F)/C in terms of an atomic ratio is made between 0.5 and 0.9.

Claim 2

Dependent Claim 111 words

An amorphous carbon coating film produced by sputtering a graphite target electrode in an atmosphere gas selected from the group consisting of hydrogen, fluorine and a mixture of hydrogen and fluorine having a pressure of 6.665 to 666.5 Pa (0.05 to 5.0 Torr) while maintaining a temperature of a deposition substrate between a room temperature and 100° C. and a relative current density which is a ratio of a plate current value to an area of target electrode for said graphite target electrode and an anode between 11.3 and 14.7 mA/cm 2 whereby the value of H/C or (H+F)/C in terms of an atomic ratio is made between 0.5 and 0.9.

Claim 3

Independent Claim 133 words

A method of producing a coating film comprising the steps of: selecting a gas from the group consisting of hydrogen, fluorine and a mixture of hydrogen and fluorine and maintaining a pressure of said gas within a vacuum chamber between 6.665 and 666.5 Pa (0.05 and 5.0 Torr); and sputtering a graphite target electrode in said vacuum chamber while maintaining a temperature of a deposition substrate between a room temperature and 100° C. and a relative current density which is a ratio of a plate current value to an area of target electrode for said graphite target electrode and an anode between 11.3 and 14.7 mA/cm 2 thereby producing an amorphous carbon coating film in which the value of H/C or (H+F)/C in terms of an atomic ratio is between 0.5 and 0.9.

Claim 4

Independent Claim 133 words

A method of producing a coating film comprising the steps of: selecting a gas from the group consisting of hydrogen, fluorine and a mixture of hydrogen and fluorine and maintaining a pressure of said gas within a vacuum chamber between 6.665 and 666.5 Pa (0.05 and 5.0 Torr); and sputtering a graphite target electrode in said vacuum chamber while maintaining a temperature of a deposition substrate between a room temperature and 100° C. and a relative current density which is a ratio of a plate current value to an area of target electrode for said graphite target electrode and an anode between 11.3 and 14.7 mA/cm 2 thereby producing an amorphous carbon coating film in which the value of H/C or (H+F)/C in terms of an atomic ratio is between 0.5 and 0.9.

Claim 5

Dependent Claim 37 words

A method of producing a coating film according to claim 2, wherein said temperature of the deposition substrate maintaining step includes the step of providing said substrate in a position which is not exposed to a plasma.

Claim 6

Dependent Claim 30 words

A method of producing a coating film according to claim 3, wherein said substrate providing step is performed by arranging said substrate on a wall portion of the vacuum chamber.

Claim 7

Dependent Claim 28 words

A method of producing a coating film according to claim 2, wherein said sputtering target electrode step includes the step of doping said target with a semiconducting material.

Claim 8

Dependent Claim 28 words

A method of producing a coating film according to claim 5, wherein said target doping step includes the step of selecting said semiconducting material from boron or phosphorous.

Claim 9

Dependent Claim 28 words

A method of producing a coating film according to claim 2, wherein said gas selecting step further comprises the step of mixing said gas with a semiconducting gas.

Claim 10

Dependent Claim 40 words

A method of producing a coating film according to claim 7, wherein said semiconducting gas mixing step includes the step of selecting said semiconducting gas from the group consisting of nitrogen, a gas containing boron and a gas containing phosphorous.

Claim 11

Dependent Claim 89 words

In a sputtering apparatus having a vacuum container including an atmosphere gas inlet pipe, an exhaust pipe, at least one deposition substrate, a grounded electron drawing electrode and a graphite target electrode connected to a power source, said electrodes being positioned opposite to each other, and using a magnetic field to provide a directionality for a plasma, the improvement wherein said deposition substrate is arranged on an inner wall portion of said vacuum container in a region which is within said container but not directly exposed to said plasma.

Claim 12

Dependent Claim 89 words

In a sputtering apparatus having a vacuum container including an atmosphere gas inlet pipe, an exhaust pipe, at least one deposition substrate, a grounded electron drawing electrode and a graphite target electrode connected to a power source, said electrodes being positioned opposite to each other, and using a magnetic field to provide a directionality for a plasma, the improvement wherein said deposition substrate is arranged on an inner wall portion of said vacuum container in a region which is within said container but not directly exposed to said plasma.

Claim 13

Dependent Claim 87 words

In a sputtering apparatus having a vacuum container including an atmosphere gas inlet pipe, an exhaust pipe, at least one deposition substrate, a grounded electron drawing electrode and a carbonaceous target electrode connected to a power source, said electrodes being positioned opposite to each other, and using a magnetic field to provide a directionality for a plasma, the improvement wherein an electrode having an innumerable number of holes for adjusting the amount of said plasma is arranged between said electron drawing electrode and said carbonaceous target electrode.

Claim 14

Dependent Claim 87 words

In a sputtering apparatus having a vacuum container including an atmosphere gas inlet pipe, an exhaust pipe, at least one deposition substrate, a grounded electron drawing electrode and a carbonaceous target electrode connected to a power source, said electrodes being positioned opposite to each other, and using a magnetic field to provide a directionality for a plasma, the improvement wherein an electrode having an innumerable number of holes for adjusting the amount of said plasma is arranged between said electron drawing electrode and said carbonaceous target electrode.

Claim 15

Dependent Claim 13 words

An apparatus according to claim 10, wherein said plasma adjusting electrode is grounded.

Claim 16

Dependent Claim 17 words

An apparatus according to claim 10, wherein said plasma adjusting electrode is connected to another power source.

Claim 17

Dependent Claim 15 words

An apparatus according to claim 10, wherein said plasma adjusting electrode is a mesh electrode.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1989-06-30	1989-12-30	1990-07-01	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	1993-06-30	1993-12-30	1994-07-01	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	1997-06-30	1997-12-30	1998-07-01	$7700.00	Window Closed / Lapsed

Coating film and method and apparatus for producing the same

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