Abstract The void-free pattern of isolation in a semiconductor substrate is described. There is contained within a semiconductor body a pattern of substantially vertically sided trenches. The pattern of isolation trenches isolate regions of monocrystalline semiconductor material which may contain active and passive semiconductor devices. The depth of the pattern of trenches is greater than about 3 micrometers. A first insulating layer is located upon the sidewalls of the trenches. The base or bottom of the trenches is open to the monocrystalline semiconductor body. An epitaxial layer extending from the base of the trenches fills the pattern of trenches up to between about 500 to 1500 nanometers from the upper surface of the trenches. A capping second insulating layer fills the additional portion of the pattern of trenches above the upper surfaces of the epitaxial layer for isolation of the pattern of trenches from the ambient. It is the dense epitaxial monocrystalline semiconductor which prevents the formation of voids within the pattern of trenches. The epitaxial layer must be grown in such a way so as no spurious growth occurs upon the principal surfaces of the substrate, because such growth would prevent the satisfactory chemical-mechanical polishing of the C.V.D. insulator layer.
Method for forming a void free, deep isolation structure in a monocrystalline silicon body comprising: providing a substantially vertically sided pattern of trenches greater than about 3 micrometers deep having an insulating layer sidewall and monocrystalline silicon bottom; epitaxially growing monocrystalline semiconductor in said pattern of trenches from said monocrystalline semiconductor bottom while preventing any spurious growth on the surfaces of the silicon body during the epitaxial deposition by using a SiCl 4 -H 2 -HCl gaseous reaction system at about one atmosphere pressure; continuing the epitaxial growth until the trenches are filled up to between about 300 to 1500 nanometers from the surface of the said body; forming a chemical vapor deposited insulator layer on the surface of the semiconductor body and filling the remaining portion of the pattern of trenches; and removing the portion of the said chemical vapor deposited insulator layer above the pattern of trenches by means of a chemical-mechanical polishing technique.
Claim 2
Dependent Claim
156 words
Method for forming a void free, deep isolation structure in a monocrystalline silicon body comprising: providing a substantially vertically sided pattern of trenches greater than about 3 micrometers deep having an insulating layer sidewall and monocrystalline silicon bottom; epitaxially growing monocrystalline semiconductor in said pattern of trenches from said monocrystalline semiconductor bottom while preventing any spurious growth on the surfaces of the silicon body during the epitaxial deposition by using a SiCl 4 -H 2 -HCl gaseous reaction system at about one atmosphere pressure; continuing the epitaxial growth until the trenches are filled up to between about 300 to 1500 nanometers from the surface of the said body; forming a chemical vapor deposited insulator layer on the surface of the semiconductor body and filling the remaining portion of the pattern of trenches; and removing the portion of the said chemical vapor deposited insulator layer above the pattern of trenches by means of a chemical-mechanical polishing technique.
Claim 3
Dependent Claim
19 words
The method of claim 1 wherein semiconductor body is monocrystalline silicon and said insulating layer sidewall is silicon nitride.
Claim 4
Dependent Claim
22 words
The method of claim 2 wherein a silicon dioxide layer is formed between said silicon nitride sidewall and said monocrystalline silicon body.
Claim 5
Dependent Claim
18 words
The method of claim 1 wherein the depth of said trenches is between about 3 to 10 micrometers.
Claim 6
Dependent Claim
18 words
The method of claim 4 wherein the width of said trenches is between about 1.0 to 300 micrometers.
Claim 7
Dependent Claim
23 words
The method of claim 1 wherein said epitaxially growing silicon is accomplished with the HCl component being between about 0.6 to 2.3 lmp.
Claim 8
Dependent Claim
30 words
The method of claim 6 wherein said growing is accomplished at a temperature between about 900° and 1100° C. With the HCl component being between about 1.0 and 1.4 lpm.
Claim 9
Dependent Claim
20 words
The method of claim 1 wherein said chemically vapor deposited insulator layer the surface of said body is silicon dioxide.
Claim 10
Dependent Claim
15 words
The method of claim 8 wherein the said silicon dioxide is deposited using the TEOS.
Claim 11
Dependent Claim
19 words
The method of claim 1 wherein said chemical-mechanical polishing uses a silica slurry with a PH of about 12.