US3661636A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for forming uniform and smooth surfaces
Assignee: International Business Machines Corp
•
Filing: 1970-04-22
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Granted: 1972-05-09
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Expires: 1990-04-22
Abstract
Abstract A method for forming uniform and smooth surfaces which can be used in any chemical vapor transport system and in general in any deposition system in which chemicals in a gas phase are reacted to cause deposition onto a substrate. A zone of operating conditions exists in which smooth uniform surfaces are obtained, while at the same time ridge growth and defect growth is minimized. By changing substrate temperature and the concentrations of input reactants, ridge growth and defect growth in deposited films are substantially reduced.
Inventors
- 👤 James M Green
- 👤 Thomas O Sedgwick
- 👤 Victor J Silvestri
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 15:16
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S148/049; Y10S148/05; Y10S148/051; Y10S148/115; Y10S148/145
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
11 words
The process of claim 1, wherein said depositing material is germanium.
Claim 2
Dependent Claim
11 words
The process of claim 1, wherein said deposited material is silicon.
Claim 3
Dependent Claim
16 words
The process of claim 1, wherein said substrate is different from the material to be deposited.
Claim 4
Dependent Claim
14 words
The process of claim 1, wherein said material to be deposited is a semiconductor.
Claim 5
Dependent Claim
19 words
The process of claim 1, wherein only said concentrations are changed, said temperature being held constant during said deposition.
Claim 6
Dependent Claim
20 words
The process of claim 1, wherein only said substrate temperature is changed, said concentrations being held constant during said deposition.
Claim 7
Dependent Claim
187 words
A process for epitaxially depositing material onto a substrate, wherein gaseous species containing said material and a carrier gas are reacted to deposit said material onto said substrate, said process being characterized by a surface rate limited region in which deposition rate is dependent on substrate temperature and a mass transport limited region in which deposition rate is temperature insensitive, comprising: reacting said gaseous species and said carrier gas at first concentrations and first substrate temperature such that said deposition occurs in said surface rate limited region, said deposited material exhibiting faceted growth structure; changing said substrate temperature and said concentrations in directions which cause said deposition to move into said mass transport limited region, said changes continuing until said deposited material exhibits defect growth thereon and said faceted growth ceases; reversing the direction of change of said substrate temperature and said concentrations and changing said substrate temperature and concentrations until final values are reached at which said deposited material does not exhibit said defect growth and said growth facets; continuing said epitaxial deposition at said final values until said deposited material has a desired final thickness.
Claim 8
Dependent Claim
19 words
The process of claim 8, wherein only said concentrations are changed, said temperature being held constant during said deposition.
Claim 9
Dependent Claim
20 words
The process of claim 8, wherein only said substrate temperature is changed, said concentrations being held constant during said deposition.
Claim 10
Dependent Claim
11 words
The process of claim 8, wherein said depositing material is germanium.
Claim 11
Dependent Claim
11 words
The process of claim 8, wherein said depositing material is silicon.
Claim 12
Dependent Claim
14 words
The process of claim 8, wherein said material to be deposited is a semiconductor.
Claim 13
Dependent Claim
16 words
The process of claim 8, wherein said substrate is different from the material to be deposited.
References Cited (Backward Citations)
US3301213A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-05-09 | 1975-11-08 | 1976-05-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-05-09 | 1979-11-08 | 1980-05-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-05-09 | 1983-11-08 | 1984-05-09 | $7700.00 | Window Closed / Lapsed |