Patent US4404233A successfully refreshed from Google Patents.
US4404233A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ion implanting method
Assignee: Hitachi Ltd
•
Filing: 1981-01-13
•
Granted: 1983-09-13
•
Expires: 2001-01-13
Abstract
Abstract The ion implantation is performed in a manner to vary the angle between an ion beam and an article to be implanted with ions, whereby it can be accomplished with remarkable ease while providing the impurity distribution which is flattened in the depthwise direction.
Inventors
- 👤 Tadashi Ikeda
- 👤 Norikazu Tsumita
- 👤 Yutaka Sugita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 19:52
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/48; C30; C30B; C30B31/00; C30B31/20; C30B31/22; G; G11; G11C; G11C19/00; G11C19/02; G11C19/08; G11C19/0808; H; H01; H01F; H01F41/00; H01F41/14; H01J; H01J37/00; H01J37/30; H01J37/317; H01J37/3171; H10; H10P; H10P30/00; H10P30/20
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
76 words
An ion implanting method of forming an ion-implanted region in a magnetic film to be ion-implanted by irradiating a desired portion of said film with an ion beam directed at an angle to said film, wherein the improvement resides in that the irradiation of said ion beam is performed in a manner to vary the angle between said ion beam and the desired portion of said film whereby the peak of the ion concentration is flattened.
Claim 2
Dependent Claim
76 words
An ion implanting method of forming an ion-implanted region in a magnetic film to be ion-implanted by irradiating a desired portion of said film with an ion beam directed at an angle to said film, wherein the improvement resides in that the irradiation of said ion beam is performed in a manner to vary the angle between said ion beam and the desired portion of said film whereby the peak of the ion concentration is flattened.
Claim 3
Dependent Claim
19 words
An ion implanting method according to claim 1, wherein said film is a magnetic film for a contiguous element.
Claim 4
Dependent Claim
26 words
An ion implanting method according to claim 1 or 2, wherein the angle between said ion beam and said film is varied either continuously or intermittently.
Claim 5
Dependent Claim
24 words
An ion implanting method according to claim 3, wherein the angle between said ion beam and said film is varied either automatically or manually.
Claim 6
Dependent Claim
52 words
An ion implanting method according to claim 1, wherein said ion beam is directed onto said portion of said film so that an angle θ between the normal of the surface of the film and the direction of the ion beam is varied gradually in a range of from 0° to 90°.
Claim 7
Dependent Claim
36 words
An ion-implanting method according to claim 1, wherein said ion beam is directed at an angle to said film in such a manner as to gradually vary the angle between said ion beam and said film.
References Cited (Backward Citations)
US3792452A
Cited
US3873371A
Cited
US3914857A
Cited
US4030997A
Cited
US4108751A
Cited
US4274935A
Cited
US4275286A
Cited
US4250009A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-09-12 | 1987-03-14 | 1987-09-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-09-12 | 1991-03-14 | 1991-09-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-09-12 | 1995-03-14 | 1995-09-13 | $7700.00 | Window Closed / Lapsed |