Dual sensitivity optical sensor

Claim 2

An integrated dual sensitivity photodetector implemented in a semiconductor material substrate comprising a central region comprising a relatively high sensitivity photodetector device and a surrounding region comprising a relatively lower sensitivity photodector device.

Claim 3

The photodetector of claim 1 wherein the photodetectors are photoconductors.

Claim 4

The photodetector of claim 1 wherein the central region and the surrounding region are substantially symmetrically arrayed about a central point.

Claim 5

The photodetector of claim 2 wherein the relatively high sensitivity photodetector device comprises a reach through avalanche photodiode (RAPD).

Claim 6

The photodetector of claim 2 wherein the relatively lower sensitivity photodetector device comprises a P-type, intrinsic, N-type photodiode (PIN).

Claim 7

The photodetector of claim 3 wherein the regions are each radially separated into a plurality of segments.

Claim 8

The photodetector of claim 6 wherein there are four substantially equal area segments in each region.

Claim 9

The photoconductors of claim 2 wherein the photoconductors comprise semiconductors.

Claim 10

The semiconductors of claim 8 wherein the semiconductors are implemented with silicon technology.

Claim 11

A solid state semiconductor dual sensitivity photodetector device comprising an intrinsic substrate having disposed on a first side a plurality of P+-type radial segments in an inner area substantially symmetrically surrounding a central point surrounded by a further plurality of P+-type radial segments in an outer symmetrically surrounding area, the outer area being isolated from the inner area by a moat, and having disposed on an opposite side of the device a first P-type area located directly opposite to and having substantially the same area as the inner area of the first side and a second N+-type area symmetrically located upon and completely covering the first P-type area, the N+-type area having substantially the same perimeter as the outer perimeter of the symmetrically surrounding outer area on the first side.

Claim 12

A solid state semiconductor dual sensitivity photodetector device comprising an intrinsic substrate having disposed on a first side a plurality of P+-type radial segments in an inner area substantially symmetrically surrounding a central point surrounded by a further plurality of P+-type radial segments in an outer symmetrically surrounding area, the outer area being isolated from the inner area by a moat, and having disposed on an opposite side of the device a first P-type area located directly opposite to and having substantially the same area as the inner area of the first side and a second N+-type area symmetrically located upon and completely covering the first P-type area, the N+-type area having substantially the same perimeter as the outer perimeter of the symmetrically surrounding outer area on the first side.

Claim 13

A solid state semiconductor dual sensitivity photodetector device comprising an intrinsic substrate having disposed on a first side a first P-type area in an inner area substantially symmetrically surrounding a central axis and a second N+-type area symmetrically located upon and completely covering the first P-type area, the effective radius of the N+-type area being greater than about 1.5 times the effective radius of the P-type area, and having disposed on an opposite side of the device a plurality of P+-type radial segments in an area symmetrically surrounding the central axis, the outer perimeter of the P+-type area being substantially the same as the outer perimeter of the N+-type area on the first side.

Claim 14

A solid state semiconductor dual sensitivity photodetector device comprising an intrinsic substrate having disposed on a first side a first P-type area in an inner area substantially symmetrically surrounding a central axis and a second N+-type area symmetrically located upon and completely covering the first P-type area, the effective radius of the N+-type area being greater than about 1.5 times the effective radius of the P-type area, and having disposed on an opposite side of the device a plurality of P+-type radial segments in an area symmetrically surrounding the central axis, the outer perimeter of the P+-type area being substantially the same as the outer perimeter of the N+-type area on the first side.

Claim 15

A photodetector circuit comprising: an integrated dual sensitivity photodetector implemented in a planar semiconductor material comprising a central region comprising a relatively high sensitivity photodiode device and a surrounding region comprising a relatively lower sensitivity photodiode device wherein the central region and the surrounding region are substantially symmetrically arrayed about a central point and the two regions are radially separated into matching segments, and bias voltage means wherein a bias voltage is applied across the photodetector such that a response to a quantum of illumination by one of the central segments is substantially equal to the response of one of the surrounding region segments for the same quantum of illumination.

Claim 16

A photodetector circuit comprising: an integrated dual sensitivity photodetector implemented in a planar semiconductor material comprising a central region comprising a relatively high sensitivity photodiode device and a surrounding region comprising a relatively lower sensitivity photodiode device wherein the central region and the surrounding region are substantially symmetrically arrayed about a central point and the two regions are radially separated into matching segments, and bias voltage means wherein a bias voltage is applied across the photodetector such that a response to a quantum of illumination by one of the central segments is substantially equal to the response of one of the surrounding region segments for the same quantum of illumination.

Claim 17

A photodetector circuit comprising: a solid state semiconductor dual sensitivity photodiode device comprising an intrinsic substrate having disposed on a first side a plurality of P+-type radial segments in an inner area substantially symmetrically surrounding a central point with the inner area surrounded by a further plurality of P+-type radial segments in an outer symmetrically surrounding area, the outer area being isolated from the inner area by a moat, and having disposed on an opposite side of the device a first P-type area located directly opposite to and having substantially the same area as the inner area of the first side and a second N+-type area symmetrically located upon and completely covering the first P-type area, the N+-type area having substantially the same perimeter as the outer perimeter of the symmetrically surrounding outer area on the first side, and bias voltage means wherein a bias voltage is applied across the photodiode device such that a response to a quantum of illumination by one of the radial segments in the inner area is substantially equal to the response of one of the radial segments of the outer area for the same quantum of illumination.

Claim 18

A photodetector circuit comprising: a solid state semiconductor dual sensitivity photodiode device comprising an intrinsic substrate having disposed on a first side a plurality of P+-type radial segments in an inner area substantially symmetrically surrounding a central point with the inner area surrounded by a further plurality of P+-type radial segments in an outer symmetrically surrounding area, the outer area being isolated from the inner area by a moat, and having disposed on an opposite side of the device a first P-type area located directly opposite to and having substantially the same area as the inner area of the first side and a second N+-type area symmetrically located upon and completely covering the first P-type area, the N+-type area having substantially the same perimeter as the outer perimeter of the symmetrically surrounding outer area on the first side, and bias voltage means wherein a bias voltage is applied across the photodiode device such that a response to a quantum of illumination by one of the radial segments in the inner area is substantially equal to the response of one of the radial segments of the outer area for the same quantum of illumination.

Claim 19

A photodetector circuit comprising: a solid state semiconductor dual sensitivity photodiode device comprising an intrinsic substrate having disposed on a a first side a first P-type area in an inner area substantially symmetrically surrounding a central axis and a second N+-type area symmetrically located upon and completely covering the first P-type area, the effective radius of the N+-type area being greater than about 1.5 times the effective radius of the P-type area, and having disposed on an opposite side of the device a plurality of P+-type radial segments in an area symmetrically surrounding the central axis, the outer perimeter of the P+-type area being substantially the same as the outer perimeter of the N+-type area on the first side, and bias voltage means wherein a bias voltage is applied across the photodiode device such that a response to a quantum of illumination by one of the radial segments in the inner area is substantially equal to the response of one of the radial segments of the outer area for the same quantum of illumination.

Claim 20

A photodetector circuit comprising: a solid state semiconductor dual sensitivity photodiode device comprising an intrinsic substrate having disposed on a a first side a first P-type area in an inner area substantially symmetrically surrounding a central axis and a second N+-type area symmetrically located upon and completely covering the first P-type area, the effective radius of the N+-type area being greater than about 1.5 times the effective radius of the P-type area, and having disposed on an opposite side of the device a plurality of P+-type radial segments in an area symmetrically surrounding the central axis, the outer perimeter of the P+-type area being substantially the same as the outer perimeter of the N+-type area on the first side, and bias voltage means wherein a bias voltage is applied across the photodiode device such that a response to a quantum of illumination by one of the radial segments in the inner area is substantially equal to the response of one of the radial segments of the outer area for the same quantum of illumination.