US4129878A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Multi-element avalanche photodiode having reduced electrical noise
Assignee: RCA Inc
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Filing: 1977-10-17
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Granted: 1978-12-12
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Expires: 1997-10-17
Abstract
Abstract Avalanche photodiodes include a substrate of a high resistivity material having at least a first surface. The substrate is of a particular conductivity type. In the substrate and at the first surface are a plurality of spaced apart regions of the same conductivity type as the substrate and defining the individual photodiode elements of the avalanche photodiode. Occupying the area at the first surface of the substrate not occupied by the spaced regions and extending into the substrate is a discontinuous layer of the same conductivity type as the spaced regions but of a conductivity concentration much lower than the conductivity concentration of the spaced regions. On the first surface of the substrate covering the discontinuous layer and slightly overlapping the spaced regions is a patterned passivation layer. The improvement of the present invention over the prior art is the addition of the discontinuous layer which reduces the electrical noise in the output signal of the avalanche photodiode.
Inventors
- 👤 Paul P. Webb
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 08:10
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/225
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
193 words
A multi-element avalanche photodiode comprising: a substrate of a semiconductor material having a resistivity in the range of 500 to 20,000 ohm-cm, said substrate being of one conductivity type having first and second opposed surfaces; a plurality of spaced regions in said substrate and at said first surface, said spaced regions being of the same conductivity type as said substrate; a discontinuous layer in said substrate and substantially occupying that area at said first surface not occupied by said spaced regions, said discontinuous layer having a conductivity concentration lower than the lowest conductivity concentration of said spaced regions, a first layer in said substrate and at said second surface, said first layer of a conductivity type opposite that of said substrate; a second layer in said substrate spaced from said second surface and contiguous to said first layer, said second layer of the opposite conductivity type as said first layer thereby forming an avalanche junction therebetween; a first passivation region on said first surface covering said discontinuous layer and slightly overlapping said spaced regions; and a second passivation region extending along the periphery of said second surface and slightly overlapping said first layer.
Claim 2
Dependent Claim
193 words
A multi-element avalanche photodiode comprising: a substrate of a semiconductor material having a resistivity in the range of 500 to 20,000 ohm-cm, said substrate being of one conductivity type having first and second opposed surfaces; a plurality of spaced regions in said substrate and at said first surface, said spaced regions being of the same conductivity type as said substrate; a discontinuous layer in said substrate and substantially occupying that area at said first surface not occupied by said spaced regions, said discontinuous layer having a conductivity concentration lower than the lowest conductivity concentration of said spaced regions, a first layer in said substrate and at said second surface, said first layer of a conductivity type opposite that of said substrate; a second layer in said substrate spaced from said second surface and contiguous to said first layer, said second layer of the opposite conductivity type as said first layer thereby forming an avalanche junction therebetween; a first passivation region on said first surface covering said discontinuous layer and slightly overlapping said spaced regions; and a second passivation region extending along the periphery of said second surface and slightly overlapping said first layer.
Claim 3
Dependent Claim
23 words
The multi-element avalanche photodiode in accordance with claim 1 wherein said substrate has a resistivity in the range of 3,000 to 5,000 ohm-cm.
Claim 4
Dependent Claim
16 words
The multi-element photodiode in accordance with claim 1 wherein said spaced regions are quadrant in shape.
Claim 5
Dependent Claim
65 words
The multi-element avalanche photodiode in accordance with claim 1 wherein the conductivity concentration of said first layer is graded such that it is highest at said second surface and decreases toward said avalanche junction, and the conductivity concentration of said second layer is graded such that it is highest at said avalanche junction and decreases toward the interface of said second layer and said substrate.
Claim 6
Dependent Claim
35 words
The multi-element photodiode in accordance with claim 1 wherein said substrate, said spaced regions, said discontinuous layer and said second layer are of P type conductivity and said first layer is of N type conductivity.
Claim 7
Dependent Claim
38 words
The multi-element avalanche photodiode in accordance with claim 1 wherein said first passivation region includes a first layer of silicon dioxide contiguous to said first surface and a second layer of silicon nitride contiguous to said first layer.
Claim 8
Dependent Claim
38 words
The multi-element avalanche photodiode in accordance with claim 1 wherein said second passivation region includes a first layer of silicon dioxide contiguous to said second surface and a second layer of silicon nitride contiguous to said first layer.
Claim 9
Dependent Claim
36 words
The multi-element avalanche photodiode in accordance with claim 1 wherein said spaced regions have a conductivity concentration that is highest at said first surface and decreases toward the interface of said spaced regions and said substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-12-11 | 1982-06-12 | 1982-12-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-12-11 | 1986-06-12 | 1986-12-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-12-11 | 1990-06-12 | 1990-12-12 | $7700.00 | Window Closed / Lapsed |