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US4329418A
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US
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Organometallic semiconductor devices
Assignee: MISSOURI COLUMBIA MO 65211 AN EDUCATIONAL INSTITUTION OF, University of
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Filing: 1980-11-14
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Granted: 1982-05-11
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Expires: 2000-11-14
Abstract
Abstract Organotin semiconductor thin films are deposited on a substrate by plasma deposition of reactive organotin species. Conductivity can be increased by heat-treating organotin semiconductors in a reducing atmosphere at a temperature below the melting point of tin. Organotin semiconductors are rendered conductive by exposure to electron or particle beam.
Inventors
- 👤 Erich Kny
- 👤 William J. James
- 👤 Leonard L. Levenson
- 👤 Robert A. Auerbach
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 16:53
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/832; C; C23; C23C; C23C16/00; C23C16/22; H10K; H10K85/00; H10K85/30; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3412
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
18 words
A semiconductive element consisting essentially of a thin, continuous, solid film consisting essentially of carbon, hydrogen and tin.
Claim 2
Dependent Claim
18 words
A semiconductive element consisting essentially of a thin, continuous, solid film consisting essentially of carbon, hydrogen and tin.
Claim 3
Dependent Claim
19 words
A semiconductive element according to claim 1 wherein said film has a carbon:tin atomic ratio of 2:1 or less.
Claim 4
Independent Claim
55 words
A method for forming a semiconductor device comprising exposing at least one substrate to a glow discharge plasma comprising ionized fragments of at least one organotin monomer for a time sufficient to deposit on said at least one substrate a thin, continuous, solid semiconductive film having a composition consisting essentially of carbon, hydrogen and tin.
Claim 5
Independent Claim
55 words
A method for forming a semiconductor device comprising exposing at least one substrate to a glow discharge plasma comprising ionized fragments of at least one organotin monomer for a time sufficient to deposit on said at least one substrate a thin, continuous, solid semiconductive film having a composition consisting essentially of carbon, hydrogen and tin.
Claim 6
Dependent Claim
92 words
A method according to claim 3 comprising (a) Disposing within a reaction zone at least one substrate; (b) Introducing into such reaction zone a vaporized material consisting essentially of fragmentable organotin monomer; (c) Subjecting such vaporized fragmentable organotin monomer to an electrical glow discharge, whereby there is formed a plasma comprising reactive fragments of said organotin monomer; (d) Contacting said at least one substrate within said reaction zone with said reactive fragments; and (e) Depositing on said substrate a thin, solid, continuous amorphous semiconductive film consisting essentially of carbon, hydrogen and tin.
Claim 7
Independent Claim
79 words
A method for increasing conductivity of a thin film semiconductor device comprising exposing at least one substrate to a glow discharge plasma comprising ionized reactive fragments of at least one organotin monomer for a time sufficient to deposit on said at least one substrate a thin, solid, continuous semiconductive film having a composition consisting essentially of carbon, hydrogen and tin; and heating said semiconductive film at a temperature below 232° C., whereby the conductivity of said film is increased.
Claim 8
Independent Claim
79 words
A method for increasing conductivity of a thin film semiconductor device comprising exposing at least one substrate to a glow discharge plasma comprising ionized reactive fragments of at least one organotin monomer for a time sufficient to deposit on said at least one substrate a thin, solid, continuous semiconductive film having a composition consisting essentially of carbon, hydrogen and tin; and heating said semiconductive film at a temperature below 232° C., whereby the conductivity of said film is increased.
Claim 9
Independent Claim
78 words
A method for preparing a thin film conductor comprising, (1), exposing at least one substrate to a glow discharge plasma comprising ionized reactive fragments of at least one organotin monomer for a time sufficient to deposit on at least one substrate a thin, solid, continuous semiconductive film having a composition consisting essentially of carbon, hydrogen and tin; and, (2), contacting said semiconductive film with ionizing radiation to convert the tin moiety of said semiconductive film to conductive tin.
Claim 10
Independent Claim
78 words
A method for preparing a thin film conductor comprising, (1), exposing at least one substrate to a glow discharge plasma comprising ionized reactive fragments of at least one organotin monomer for a time sufficient to deposit on at least one substrate a thin, solid, continuous semiconductive film having a composition consisting essentially of carbon, hydrogen and tin; and, (2), contacting said semiconductive film with ionizing radiation to convert the tin moiety of said semiconductive film to conductive tin.
Claim 11
Independent Claim
76 words
A method for forming a device having at least one conductive element disposed within a semiconductor matrix comprising, (1), exposing at least one substrate to a glow discharge plasma comprising ionized reactive fragments of at least one organotin monomer to deposit on at least one substrate a thin, solid, continuous, semiconductive film; and, (2) exposing a selected portion of said semiconductive to focused ionizing radiation to convert tin moieties of said selected portion to conductive tin.
Claim 12
Independent Claim
76 words
A method for forming a device having at least one conductive element disposed within a semiconductor matrix comprising, (1), exposing at least one substrate to a glow discharge plasma comprising ionized reactive fragments of at least one organotin monomer to deposit on at least one substrate a thin, solid, continuous, semiconductive film; and, (2) exposing a selected portion of said semiconductive to focused ionizing radiation to convert tin moieties of said selected portion to conductive tin.
Claim 13
Independent Claim
12 words
A device comprising conductive tin element disposed within an organotin semiconductor matrix.
Claim 14
Independent Claim
12 words
A device comprising conductive tin element disposed within an organotin semiconductor matrix.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-05-10 | 1985-11-09 | 1986-05-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-05-10 | 1989-11-09 | 1990-05-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-05-10 | 1993-11-09 | 1994-05-11 | $7700.00 | Window Closed / Lapsed |