Electronic-beam programmable semiconductor device structure

Claim 1

An integrated semiconductor device including an insulated gate field effect transistor capable of being selectively programmed by an electron beam for use in a memory array, said transistor comprising: an electrically isolated gate electrode overlying a gate insulator layer which overlies a semiconductor substrate of a first conductivity type and disposed spatially between a source region and a spaced apart drain region of opposite conductivity type which form a pair of PN junctions in said substrate; an insulator layer overlying said gate electrode and being of a thickness to allow penetration of electrons from an electron beam to said gate electrode; a region in said substrate underlying said gate electrode, positioned between said source and drain regions and having a conductive state responsive to electrons stored on said gate electrode from said electron beam; and means on said substrate for accurately positioning said electron beam with respect to said gate electrode.