US4161701A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser
Assignee: Hitachi Ltd
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Filing: 1977-03-24
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Granted: 1979-07-17
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Expires: 1997-03-24
Abstract
Abstract A semiconductor layer for supporting a diode chip of a semiconductor laser is formed to be higher than a semiconductor layer containing a current-conducting region, whereby stresses acting on the diode chip by mounting the diode chip are relieved to prevent degradation of performance and reduced life of the semiconductor laser.
Inventors
- 👤 Yutaka Takeda
- 👤 Satoshi Nakamura
- 👤 Naoki Chinone
- 👤 Hisao Nakashima
- 👤 Kazuhiro Kurata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 10:30
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/02; H01S5/024; H01S5/022; H01S5/0233; H01S5/0234; H01S5/0235; H01S5/02355; H01S5/0237; H01S5/2054; H01S5/2059; H10; H10H; H10H20/00; H10H20/80; H10H20/85; H10H20/858; H10H20/8582
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
134 words
A semiconductor laser comprising: a semiconductor wafer having first and second principal surfaces, a first electrode provided at said first principal surface, a P-N junction formed with an active region at said second principal surface, a current conducting semiconductor region formed on said active region, at least one second semiconductor region formed into a mesa shape on said active region and separated from said current conducting semiconductor region by a groove, a dielectric layer covering said second semiconductor region and said groove, a second electrode formed on said dielectric layer and said current conducting semiconductor region, and a heat sink mounted at said second electrode and being supported by said second semiconductor region and dielectric layer thereon forming a mounting support which is closer to said heat sink than said current conducting semiconductor region.
Claim 2
Dependent Claim
134 words
A semiconductor laser comprising: a semiconductor wafer having first and second principal surfaces, a first electrode provided at said first principal surface, a P-N junction formed with an active region at said second principal surface, a current conducting semiconductor region formed on said active region, at least one second semiconductor region formed into a mesa shape on said active region and separated from said current conducting semiconductor region by a groove, a dielectric layer covering said second semiconductor region and said groove, a second electrode formed on said dielectric layer and said current conducting semiconductor region, and a heat sink mounted at said second electrode and being supported by said second semiconductor region and dielectric layer thereon forming a mounting support which is closer to said heat sink than said current conducting semiconductor region.
Claim 3
Dependent Claim
33 words
A semiconductor laser according to claim 1, wherein said current conducting semiconductor region is spaced from said heat sink by at least the thickness of said dielectric layer covering said second semiconductor region.
Claim 4
Dependent Claim
143 words
A mesa-stripe geometry semiconductor laser comprising: a semiconductor wafer having first and second principal surfaces, a first electrode provided at said first principal surface, a P-N junction formed with an active region at said second principal surface, a mesa-shaped current conducting semiconductor region formed on at least a part of said active region, at least one support mounting second semiconductor region formed into a mesa shape and separated from said current conducting semiconductor region by a groove, a dielectric layer covering said support mounting second semiconductor region and said groove, a second electrode formed on said dielectric layer and said current conducting semiconductor region, and a heat sink mounted at said second electrode and being supported by said support mounting semiconductor region and dielectric layer thereon forming a mounting support which is closer to said heat sink than said current conducting semiconductor region.
Claim 5
Dependent Claim
143 words
A mesa-stripe geometry semiconductor laser comprising: a semiconductor wafer having first and second principal surfaces, a first electrode provided at said first principal surface, a P-N junction formed with an active region at said second principal surface, a mesa-shaped current conducting semiconductor region formed on at least a part of said active region, at least one support mounting second semiconductor region formed into a mesa shape and separated from said current conducting semiconductor region by a groove, a dielectric layer covering said support mounting second semiconductor region and said groove, a second electrode formed on said dielectric layer and said current conducting semiconductor region, and a heat sink mounted at said second electrode and being supported by said support mounting semiconductor region and dielectric layer thereon forming a mounting support which is closer to said heat sink than said current conducting semiconductor region.
Claim 6
Dependent Claim
35 words
A mesa-stripe geometry semiconductor laser according to claim 3, wherein said current conducting semiconductor region is spaced from said heat sink by at least the thickness of said dielectric layer covering said second semiconductor region.
Claim 7
Dependent Claim
139 words
A planar-type semiconductor laser comprising: a semiconductor wafer having first and second principal surfaces, a first electrode provided at said first principal surface, a P-N junction formed with an active region at said second principal surface, a planar current conducting semiconductor region formed on said active region, at least one support mounting second semiconductor region formed into a mesa shape and separated from said current conducting semiconductor region by a groove, a dielectric layer covering said support mounting second semiconductor region and said groove, a second electrode formed on said dielectric layer and said planar current conducting semiconductor region, and a heat sink mounted at said second electrode and being supported by said support mounting semiconductor region and dielectric region thereon forming a mounting support which is closer to said heat sink than said planar current conducting semiconductor region.
Claim 8
Dependent Claim
139 words
A planar-type semiconductor laser comprising: a semiconductor wafer having first and second principal surfaces, a first electrode provided at said first principal surface, a P-N junction formed with an active region at said second principal surface, a planar current conducting semiconductor region formed on said active region, at least one support mounting second semiconductor region formed into a mesa shape and separated from said current conducting semiconductor region by a groove, a dielectric layer covering said support mounting second semiconductor region and said groove, a second electrode formed on said dielectric layer and said planar current conducting semiconductor region, and a heat sink mounted at said second electrode and being supported by said support mounting semiconductor region and dielectric region thereon forming a mounting support which is closer to said heat sink than said planar current conducting semiconductor region.
Claim 9
Dependent Claim
37 words
A planar-type semiconductor laser according to claim 5, wherein said planar current conducting semiconductor region is spaced from said heat sink by at least the thickness of said dielectric layer covering said support mounting second semiconductor region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-07-16 | 1983-01-15 | 1983-07-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-07-16 | 1987-01-15 | 1987-07-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-07-16 | 1991-01-15 | 1991-07-17 | $7700.00 | Window Closed / Lapsed |