US3896473A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Gallium arsenide schottky barrier avalance diode array
Assignee: AT&T Inc
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Filing: 1973-12-04
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Granted: 1975-07-22
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Expires: 1993-12-04
Abstract
Abstract Gallium arsenide power dissipating devices are described, which comprise an array of mesas formed on a plated heat sink in order to reduce thermal effects. The array is connected in parallel with beam leads to permit thermocompression bonding to only one of the mesas and thus reduce the number of bonding operations. Bonding stresses to the device may be eliminated by rendering one of the mesas inactive.
Inventors
- 👤 James Vincent Dilorenzo
- 👤 William Charles Niehaus
- 👤 Daniel Leon Rode
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 13:48
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/40; H10D99/00; H10W; H10W40/00; H10W40/10; H10W90/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
32 words
A SEMICONDUCTOR POWER DISSIPATING DEVICE CONSISTING OF AT LEAST THREE SEMICONDUCTOR BODIES, ARRANGED SYMMETRICALLY AROUND A CENTRALLY LOCATED INERT SEMICONDUCTOR BODY, ALL OF WHICH SEMICONDUCTOR BODIES ARE FABRICATED ON A PLANAR HEAT
Claim 2
Dependent Claim
32 words
A SEMICONDUCTOR POWER DISSIPATING DEVICE CONSISTING OF AT LEAST THREE SEMICONDUCTOR BODIES, ARRANGED SYMMETRICALLY AROUND A CENTRALLY LOCATED INERT SEMICONDUCTOR BODY, ALL OF WHICH SEMICONDUCTOR BODIES ARE FABRICATED ON A PLANAR HEAT
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-07-21 | 1979-01-20 | 1979-07-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-07-21 | 1983-01-20 | 1983-07-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-07-21 | 1987-01-20 | 1987-07-22 | $7700.00 | Window Closed / Lapsed |