US3886580A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Tantalum-gallium arsenide schottky barrier semiconductor device
Assignee: Cutler Hammer Inc
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Filing: 1973-10-09
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Granted: 1975-05-27
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Expires: 1993-10-09
Abstract
Abstract A schottky barrier semiconductor device wherein the semiconductor is gallium arsenide and the metal electrode is tantalum, passivated by formation of native oxides after the metal-semiconductor junction is made. Tantalum acts as a diffusion shield, enabling use of gold as a direct contact on the electrode.
Inventors
- 👤 Joseph A Calviello
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 12:38
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/60; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6738; H10D30/674; H10D30/675; H10D62/00; H10D62/80; H10D62/85; H10D64/00; H10D64/01; H10D64/012; H10D64/0124; H10D64/0125; H10D64/60; H10D64/64; H10D99/00; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69393; Y; Y10; Y10S; Y10S148/00; Y10S148/056; Y10S148/139
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
135 words
A SCHOTTKY BARRIER SEMICONDUCTOR DEVICE COMPRISING A BODY OF GALLIUM ARSENIDE, A METAL ELECTRODE IN CONTACT WITH SAID BODY TO FORM THEREWITH A SCHOTTKY BARRIER, AND A PASSIVATION FILM COVERING AT LEAST THE PARTS OF SAID BODY AND SAID ELECTRODE IN THE REGION OF THE PERIPHERY OF SAID BARRIER, CHARACTERIZED IN THAT A. SAID ELECTRODE IS OF TANTALUM, B. SAID PASSIVATION FILM THAT COVERS SAID BODY IS NATIVE OXIDE OF GALLIUM ARSENIDE, C. SAID PASSIVATION FILM THAT COVERS SAID ELECTRODE IS TANTALUM OXIDE IN CONTACT WITH SAID NATIVE OXIDE FILM IN CLOSE PROXIMITY TO THE EDGE OF SAID BARRIER, D. THE SURFACE REGION OF GALLIUM ARSENIDE ADJACENT THE PERIPHERY OF SAID BARRIER IS APPROXIMATELY PERPENDICULAR TO THE PLANE OF SAID BARRIER, AND E. SAID TANTALUM ELECTRODE EXTENDS ALONG SAID PLANE OUTWARDLY BEYOND SAID BARRIER PERIPHERY.
Claim 2
Dependent Claim
135 words
A SCHOTTKY BARRIER SEMICONDUCTOR DEVICE COMPRISING A BODY OF GALLIUM ARSENIDE, A METAL ELECTRODE IN CONTACT WITH SAID BODY TO FORM THEREWITH A SCHOTTKY BARRIER, AND A PASSIVATION FILM COVERING AT LEAST THE PARTS OF SAID BODY AND SAID ELECTRODE IN THE REGION OF THE PERIPHERY OF SAID BARRIER, CHARACTERIZED IN THAT A. SAID ELECTRODE IS OF TANTALUM, B. SAID PASSIVATION FILM THAT COVERS SAID BODY IS NATIVE OXIDE OF GALLIUM ARSENIDE, C. SAID PASSIVATION FILM THAT COVERS SAID ELECTRODE IS TANTALUM OXIDE IN CONTACT WITH SAID NATIVE OXIDE FILM IN CLOSE PROXIMITY TO THE EDGE OF SAID BARRIER, D. THE SURFACE REGION OF GALLIUM ARSENIDE ADJACENT THE PERIPHERY OF SAID BARRIER IS APPROXIMATELY PERPENDICULAR TO THE PLANE OF SAID BARRIER, AND E. SAID TANTALUM ELECTRODE EXTENDS ALONG SAID PLANE OUTWARDLY BEYOND SAID BARRIER PERIPHERY.
References Cited (Backward Citations)
US3244555A
Cited
US3615929A
Cited
US3672984A
Cited
US3663279A
Cited
US3756924A
Cited
US3701931A
Cited
US3717563A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-05-26 | 1978-11-25 | 1979-05-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-05-26 | 1982-11-25 | 1983-05-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-05-26 | 1986-11-25 | 1987-05-27 | $7700.00 | Window Closed / Lapsed |