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US3822467A
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Method of manufacturing a semiconductor device having a pattern of conductors and device manufactured by using said method
Assignee: US Philips Corp
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Filing: 1973-04-25
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Granted: 1974-07-09
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Expires: 1993-04-25
Abstract
Abstract A method of providing patterns of conductors on semiconductor device, in particular patterns which consist of layers of different materials. A metal auxiliary layer is used in which a negative reproduction of the desired pattern of conductors is provided. After providing the conductive layers necessary for the pattern, the excessive parts thereof are removed by the selective dissolution of the metal auxiliary layer. The method is of particular importance which patterns of conductors are used having one or more materials which cannot be etched or can be etched with difficulty only.
Inventors
- 👤 B Symersky
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 04:47
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/069; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; H05; H05K; H05K3/00; H05K3/22; H05K3/24; H10P; H10P95/00; H10W20/056; H10W20/058; H10W20/40; H10W20/41; H10W20/425; H10W20/44; H10W20/4403; H10W20/4432; H10W20/482; H10W20/484; H10W70/00; H10W70/01; H10W70/05; H10W70/60; H10W70/62; H10W70/66; C; C09; C09K; C09K2323/00; C09K2323/04; H05K2201/00; H05K2201/03; H05K2201/032; H05K2201/0326; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/944; Y10S438/948; Y10S438/951; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/49155; Y10T29/49156; Y10T428/00; Y10T428/24; Y10T428/24802; Y10T428/24917
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
257 words
A method of manufacturing a semiconductor device comprising aconductor pattern, said method comprising the steps of: a. providing a semiconductor body comprising at a surface thereof an insulating layer that comprises an aperture, said semiconductor body comprising a surface portion tHat comprises a semiconductor zone and said surface portion being accessible through said aperture; b. providing on the surface of said insulating layer an auxiliary layer consisting essentially of material differing from that of said conductor pattern, said auxiliary layer comprising at least one recess having a predetermined configuration substantially corresponding to that of said pattern of conductors that is subsequently provided, said auxiliary layer comprising first and second sub-layers of mutually different material, said first sub-layer consisting essentially of a metal layer which is preferentially soluble in a predetermined reagent with respect to said conductor pattern and being present between said insulating layer and said second sub-layer, a first part of the recess defined by said first sub-layer being larger, due to underetching, than a second part of said recess defined by second sub-layer; c. providing on said semiconductor body a layer of electrically conductive material, said layer comprising a first portion disposed over said auxiliary layer and a second portion that is disposed at said recess and extends over said insulating layer and is connected to said semiconductor zone; and d. removing said auxiliary layer and said first portion of said conductive layer so as to leave on said semiconductor body said second portion of said conductive layer, which second portion comprises said conductor pattern.
Claim 2
Independent Claim
257 words
A method of manufacturing a semiconductor device comprising aconductor pattern, said method comprising the steps of: a. providing a semiconductor body comprising at a surface thereof an insulating layer that comprises an aperture, said semiconductor body comprising a surface portion tHat comprises a semiconductor zone and said surface portion being accessible through said aperture; b. providing on the surface of said insulating layer an auxiliary layer consisting essentially of material differing from that of said conductor pattern, said auxiliary layer comprising at least one recess having a predetermined configuration substantially corresponding to that of said pattern of conductors that is subsequently provided, said auxiliary layer comprising first and second sub-layers of mutually different material, said first sub-layer consisting essentially of a metal layer which is preferentially soluble in a predetermined reagent with respect to said conductor pattern and being present between said insulating layer and said second sub-layer, a first part of the recess defined by said first sub-layer being larger, due to underetching, than a second part of said recess defined by second sub-layer; c. providing on said semiconductor body a layer of electrically conductive material, said layer comprising a first portion disposed over said auxiliary layer and a second portion that is disposed at said recess and extends over said insulating layer and is connected to said semiconductor zone; and d. removing said auxiliary layer and said first portion of said conductive layer so as to leave on said semiconductor body said second portion of said conductive layer, which second portion comprises said conductor pattern.
Claim 3
Dependent Claim
29 words
A method as claimed in claim 1, wherein said surface portions of said semiconductor body accessible through said aperture are exposed prior to the provision of said first sub-layer.
Claim 4
Dependent Claim
34 words
A method as claimed in claim 1, wherein said conductive layer is produced by successively providing at least first and second layers of mutually different conductive materials, so as to form a composite layer.
Claim 5
Dependent Claim
43 words
A method as claimed in claim 3, wherein said first layer constitutes the lowermost layer of said composite conductive layer and is disposed nearest to said semiconductor body surface, said first layer consisting essentially of one of titanium, chromium, rhodium, tantalum, and tungsten.
Claim 6
Dependent Claim
25 words
A method as claimed in claim 3, wherein said second layer constitutes the uppermost layer of said composite conductive layer and consists essentially of gold.
Claim 7
Dependent Claim
53 words
A method as claimed in claim 5, wherein said first layer consists essentially of one of chromium and titanium and said method comprises the further step of providing a third layer on said first layer before the provision of said second layer, said third layer consisting essentially of one of platinum and rhodium.
Claim 8
Dependent Claim
60 words
A method as claimed in claim 1, comprising the step of providing said conductive layer from the gaseous phase and under reduced pressure, said step utilizing a local source of material and being carried out such that the transport of material for said conductive layer takes place mainly in a direction substantially perpendicular to the surface of said semiconductor body.
Claim 9
Dependent Claim
50 words
A method as claimed in claim 3, wherein said step of providing said composite conductive layer includes providing a local source of material and maintaining said source at substantially equal distance from the surface of said auxiliary layer during the provision of the component layers of said composite conductive layer.
Claim 10
Dependent Claim
25 words
A method as claimed in claim 1, wherein said auxiliary layer has a thickness which is at least equal to that of said conductive layer.
Claim 11
Dependent Claim
72 words
A method as claimed in claim 1, wherein said second sub-layer of said auxiliary comprises a metal layer which consists of a material differing from that of said first sub-layer, said second sub-layer comprising said recess second part, said method comprising the step of etching said recess first part in said first sub-layer with the use of said second sub-layer as an etching mask for said first-sub-layer that underlies said second sub-layer.
Claim 12
Dependent Claim
23 words
A method as claimed in claim 1, comprising the step of producing said first sub-layer of a greaTer thickness than said second sub-layer.
Claim 13
Dependent Claim
24 words
A method as claimed in claim 1, comprising the step of producing said first sub-layer essentially from one of aluminum, copper, silver and magnesium.
Claim 14
Dependent Claim
26 words
A method as claimed in claim 12, comprising the step of producing said second sub-layer essentially from one of chromium, palladium, molybdenum, tungsten, tantalum and nickel.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-07-08 | 1978-01-07 | 1978-07-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-07-08 | 1982-01-07 | 1982-07-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-07-08 | 1986-01-07 | 1986-07-09 | $7700.00 | Window Closed / Lapsed |