Patent US3629018A successfully refreshed from Google Patents.
US3629018A
Expired / Lapsed
US
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Process for the fabrication of light-emitting semiconductor diodes
Assignee: Texas Instruments Inc
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Filing: 1969-01-23
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Granted: 1971-12-21
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Expires: 1989-01-23
Abstract
Abstract A light-emitting semiconductor diode is made from an N-type crystal of GaAsP or GaP by the selective diffusion of zinc therein to form a PN junction. A special diffusion mask system is employed, to obtain a combination of direct diffusion into an unmasked region, and lateral diffusion beneath a selected portion of the mask. The major, active portion of the junction is formed by lateral diffusion, whereas that portion of the P-region formed by direct diffusion serves primarily as a preferred location for contact metallization.
Inventors
- 👤 George A Henderson
- 👤 Gary E Pittman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 16:02
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H10; H10D; H10D99/00; H10H; H10H20/00; H10H20/80; H10P; H10P95/00; H10W; H10W74/00; H10W74/40; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/049; Y10S148/065; Y10S148/106; Y10S148/119; Y10S148/145
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
16 words
A method as defined by claim 1 wherein said first diffusion masking layer is silicon nitride.
Claim 2
Dependent Claim
17 words
A method as defined by claim 1 wherein said second diffusion masking layer is phosphorus-doped silicon dioxide.
Claim 3
Dependent Claim
19 words
A method as defined by claim 1 wherein said semiconductor crystal is selected from gallium phosphide and gallium arsenide-phosphide.
Claim 4
Dependent Claim
14 words
A method as defined by claim 1 wherein said selected acceptor impurity is zinc.
Claim 5
Independent Claim
189 words
A method for the fabrication of a light-emitting device comprising: a. forming a first diffusion masking layer on a III-V compound semIconductor crystal of N-type conductivity, said masking layer being substantially impermeable to a selected acceptor impurity and highly resistant to lateral diffusion thereof along the interface between the mask and the semiconductor crystal; b. patterning said first masking layer to provide therein a window defining an area of said crystal for conversion to P-type conductivity; c. forming on said crystal, within said window, a second masking layer which is also substantially impermeable to said acceptor impurity, but which is substantially less resistant to lateral diffusion along the interface between the mask and the semiconductor crystal; d. patterning said second masking layer to cover only the major portion of said window, leaving a small portion of said crystal exposed; e. exposing the masked crystal to said selected acceptor impurity, at diffusion conditions, for a time sufficient to cause conversion of a region of said crystal to P-type conductivity by a combination of direct diffusion into the exposed portion of said crystal, and lateral diffusion under said second masking layer.
Claim 6
Dependent Claim
16 words
A method as defined by claim 6 wherein said first diffusion masking layer is silicon nitride.
Claim 7
Dependent Claim
16 words
A method as defined by claim 6 wherein said second diffusion mask is phosphorus-doped silicon dioxide.
Claim 8
Dependent Claim
18 words
A method as defined by claim 6 wherein said crystal is selected from gallium phosphide and gallium arsenide-phosphide.
Claim 9
Dependent Claim
14 words
A method as defined by claim 6 wherein said selected acceptor impurity comprises zinc.
Claim 10
Independent Claim
95 words
A method for the fabrication of a semiconductor device comprising: a. depositing a silicon nitride masking layer on an N-type semiconductor crystal selected from gallium phosphide-comprising and indium phosphide-comprising compounds; b. patterning said masking layer to provide a window defining a region of said crystal to be converted to P-type conductivity; c. forming a silicon oxide layer on said crystal within the nitride window; and d. exposing said masked crystal to a vaporous impurity source comprising zinc atoms, at diffusion conditions, for a time sufficient to convert a portion of said crystal to P-type conductivity.
Claim 11
Dependent Claim
24 words
A method as defined by claim 11 wherein the area of said crystal defined by said nitride window is fully covered by silicon oxide.
Claim 12
Dependent Claim
41 words
A method as defined by claim 11 wherein only the major portion of the area of said crystal defined by the window is covered by silicon oxide, and a minor portion thereof is exposed directly to said source of zinc atoms.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-12-20 | 1975-06-21 | 1975-12-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-12-20 | 1979-06-21 | 1979-12-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-12-20 | 1983-06-21 | 1983-12-21 | $7700.00 | Window Closed / Lapsed |