US3408238A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Use of both silicon oxide and phosphorus oxide to mask against diffusion of indium or gallium into germanium semiconductor device
Assignee: Texas Instruments Inc
•
Filing: 1965-06-02
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Granted: 1968-10-29
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Expires: 1985-06-02
Abstract
No abstract record available.
Inventors
- 👤 Donald P Sanders
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 11:47
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/43; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; H10D; H10D99/00; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/05; Y10S148/106
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
US2823149A
Cited
US3041214A
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US3095332A
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US3200019A
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US3298879A
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US3303070A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-10-29 | 1972-04-29 | 1972-10-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-10-29 | 1976-04-29 | 1976-10-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-10-29 | 1980-04-29 | 1980-10-29 | $7700.00 | Window Closed / Lapsed |