Patent US3518115A successfully refreshed from Google Patents.
US3518115A
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Method of producing homogeneous oxide layers on semiconductor crystals
Assignee: Siemens AG
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Filing: 1966-06-30
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Granted: 1970-06-30
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Expires: 1986-06-30
Abstract
No abstract record available.
Inventors
- 👤 Erich Pammer
- 👤 Eduard Folkmann
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 13:39
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6502; H10P14/6504; H10P14/6512; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; Y; Y10; Y10S; Y10S438/00; Y10S438/903
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1973-06-29 | 1973-12-29 | 1974-06-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1977-06-29 | 1977-12-29 | 1978-06-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1981-06-29 | 1981-12-29 | 1982-06-30 | $7700.00 | Window Closed / Lapsed |