US2930722A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of treating silicon
Assignee: AT&T Inc
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Filing: 1959-02-03
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Granted: 1960-03-29
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Expires: 1979-02-03
Abstract
No abstract record available.
Inventors
- 👤 Joseph R Ligenza
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 04:55
CPC Classifications
H; H10; H10P; H10P95/00; H10P14/00; H10P14/60; H10P14/65; H10P14/6502; H10P14/6508; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; Y; Y10; Y10S; Y10S134/00; Y10S134/902; Y10S438/00; Y10S438/974
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
130 words
THE METHOD OF FABRICATING A SEMICONDUCTOR DEVICE, WHICH METHOD COMPRISES DIFFUSING AT LEAST ONE SIGNIFICANT IMPURITY INTO A SINGLE CRYSTAL BODY OF SILICON, WASHING SAID BODY IN A MIXTURE OF NITRIC ACID AND HYDROFLUORIC ACID, RINSING SAID BODY IN DEIONIZED WATER, WASHING SAID BODY IN A HOT HYDROCARBON SOLVENT, WASHING SAID BODY IN HOT DEIONIZED WATER, IMMERSING SAID BODY IN HOT NITRIC SAID, RINSING SAID BODY IN HOT DEIONIZED WATER AND THEN IN DEIONIZED WATER AT A LOWER TEMPERATURE, AND THEN OXIDIZING SAID BODY IN STEAM AT A TEMPERATURE BETWEEN 500* CENTIGRADE OF 850* CENTIGRADE AND BELOW A MAXIMUM PRESSURE OF BETWEEN 475 ATMOSPHERES AT 500* CENTIGRADE AND 105 ATMOSPHERES AT 850* CENTIGRADE FOR A PERIOD SUFFICIENT TO PRODUCE AN OXIDE LAYER HAVING A THICKNESS OF AT LEAST 300 ANGSTROMS.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1963-03-29 | 1963-09-28 | 1964-03-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1967-03-29 | 1967-09-28 | 1968-03-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1971-03-29 | 1971-09-28 | 1972-03-29 | $7700.00 | Window Closed / Lapsed |