Field effect device and method of manufacturing the same

Claim 1

A SEMICONDUCTOR DEVICE OF THE FIELD EFFECT TYPE INCLUDING IN COMBINATION, A SEMICONDUCTOR CRYSTAL ELEMENT OF A SELECTED CONDUCTIVITY TYPE AND HAVING A PREDETERMINED DOPING LEVEL, A FIRST EPITAXIAL SEMICONDUCTOR LAYER OF A CONDUCTIVITY TYPE OPPOSITE TO SAID SELECTED CONDUCTIVITY TYPE ON SAID CRYSTAL ELEMENT AND FORMING A CHANNEL REGION, SAID FIRST LAYER HAVING SUBSTANTIALLY UNIFORM DOPING AT SAID PREDETERMINED DOPING LEVEL AND HAVING A PARTICULAR THICKNESS AND SHEET RESISTIVITY, A SECOND SEMICONDUCTOR REGION OF SAID SELECTED CONDUCTIVITY TYPE AT THE SURFACE OF SAID FIRST LAYER AND FORMING A GATE REGION, SAID DEVICE HAVING DIFFUSED PORTIONS OF SAID OPOSITE CONDUCTIVITY TYPE EXTENDING INTO SAID FIRST LAYER AND COOPERATING THEREWITH TO PROVIDE SOURCE AND DRAIN SEMICONDUCTOR REGIONS FORMING EFFECTIVE OHMIC ELECTRICAL CONNECTIONS TO THE EXTREMITIES OF SAID CHANNEL REGION.