US3304430A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High frequency electro-optical device using photosensitive and photoemissive diodes
Assignee: Texas Instruments Inc
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Filing: 1963-11-29
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Granted: 1967-02-14
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Expires: 1983-11-29
Abstract
No abstract record available.
Inventors
- 👤 James R Biard
- 👤 Gary E Pittman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 09:52
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/02; H03K19/14; G; G05; G05F; G05F1/00; G05F1/10; G05F1/46; G05F1/56; G05F1/575; H03F; H03F3/00; H03F3/04; H03F3/08; H03F3/085; H03F3/34; H03F3/343; H03K17/00; H03K17/51; H03K17/78; H03K17/795; H03K17/7955; H10; H10D; H10D99/00; H10F; H10F55/00; H10F55/20; H10F55/25; Y; Y10; Y10S; Y10S323/00; Y10S323/902
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
298 words
A FOUR TERMINAL ELECTRO-OPTICAL ACTIVE DEVICE, COMPRISING: (A) A PHOTOSENSITIVE DIODE COMPRISED OF A FIRST SEMICONDUCTOR MATERIAL HAVING A P-TYPE CONDUCTIVITY REGION OF RELATIVELY HIGH ELECTRICAL CONDUCTIVITY AND AN N-TYPE CONDUCTIVITY REGION OF RELATIVELY HIGH ELECTRICAL CONDUCTIVITY SEPARATED FROM SAID P-TYPE REGION BY AN INTERMEDIATE REGION OF RELATIVELY LOW ELECTRICAL CONDUCTIVITY, (B) ELECTRICAL CONTACTS TO SAID P-TYPE REGION AND SAID N-TYPE REGION CONSTITUTING A PAIR OF OUTPUT TERMINALS, (C) POTENTIAL MEANS ELECTRICALLY COUPLED TO SAID PHOTOSENSITIVE DIODE CREATING AN ELECTRIC FIELD ACROSS SAID INTERMEDIATE REGION BETWEEN SAID P-TYPE REGION AND SAID N-TYPE REGION, TO REVERSE BIAS SAID DIODE, (D) SAID PHOTOSENSITIVE DIODE BEING CHARACTERIZED BY THE ABSORPTION OF OPTICAL RADIATION INCIDENT THEREON WHICH HAS A PHOTON ENERGY GREATER THAN THE BAND GAP ENERGY OF SAID FIRST SEMICONDUCTOR MATERIAL FOR GENERATING EXCESS MINORITY CARRIERS THEREIN AND BEING RESPONSIVE TO SAID EXCESS MINORITY CARRIERS TO ALTER THE REVERSE DIODE CHARACTERISTICS OF SAID PHOTOSENSITIVE DIODE WHEN SAID OPTICAL RADIATION IS ABSORBED WITHIN SAID INTERMEDIATE REGION, (E) A LIGHT EMITTING DIODE ELECTRICALLY ISOLATED FROM BUT OPTICALLY COUPLED TO SAID PHOTOSENSITIVE DIODE FOR GENERATING OPTICAL RADIATION WHICH IS DIRECTED ON SAID PHOTOSENSITIVE DIODE AND HAVING A FIRST REGION OF ONE CONDUCTIVITY TYPE AND A SECOND REGION OF AN OPPOSITE CONDUCTIVITY TYPE CONTIGUOUS TO AND FORMING A RECTIFYING JUNCTION WITH SAID FIRST REGION, (F) SAID LIGHT EMITTING DIODE BEING CHARACTERIZED BY THE GENERATION OF SAID OPTICAL RADIATION WHEN A FORWARD CURRENT IS CAUSED TO FLOW THROUGH THE RECTIFYING JUNCTION THEREOF, (G) SAID OPTICAL RADIATION GENERATED BY SAID LIGHT EMITTING DIODE BEING CHARACTERIZED BY A PHOTON ENERGY GREATER THAN THE BAND GAP ENERGY OF SAID FIRST SEMICONDUCTOR MATERIAL, AND (H) ELECTRICAL CONTACTS TO SAID FIRST AND SAID SECOND REGIONS OF SAID LIGHT EMITTING DIODE CONSTITUTING A PAIR OF INPUT TERMINALS FOR CONDUCTING SAID FORWARD CURRENT.
Claim 2
Dependent Claim
298 words
A FOUR TERMINAL ELECTRO-OPTICAL ACTIVE DEVICE, COMPRISING: (A) A PHOTOSENSITIVE DIODE COMPRISED OF A FIRST SEMICONDUCTOR MATERIAL HAVING A P-TYPE CONDUCTIVITY REGION OF RELATIVELY HIGH ELECTRICAL CONDUCTIVITY AND AN N-TYPE CONDUCTIVITY REGION OF RELATIVELY HIGH ELECTRICAL CONDUCTIVITY SEPARATED FROM SAID P-TYPE REGION BY AN INTERMEDIATE REGION OF RELATIVELY LOW ELECTRICAL CONDUCTIVITY, (B) ELECTRICAL CONTACTS TO SAID P-TYPE REGION AND SAID N-TYPE REGION CONSTITUTING A PAIR OF OUTPUT TERMINALS, (C) POTENTIAL MEANS ELECTRICALLY COUPLED TO SAID PHOTOSENSITIVE DIODE CREATING AN ELECTRIC FIELD ACROSS SAID INTERMEDIATE REGION BETWEEN SAID P-TYPE REGION AND SAID N-TYPE REGION, TO REVERSE BIAS SAID DIODE, (D) SAID PHOTOSENSITIVE DIODE BEING CHARACTERIZED BY THE ABSORPTION OF OPTICAL RADIATION INCIDENT THEREON WHICH HAS A PHOTON ENERGY GREATER THAN THE BAND GAP ENERGY OF SAID FIRST SEMICONDUCTOR MATERIAL FOR GENERATING EXCESS MINORITY CARRIERS THEREIN AND BEING RESPONSIVE TO SAID EXCESS MINORITY CARRIERS TO ALTER THE REVERSE DIODE CHARACTERISTICS OF SAID PHOTOSENSITIVE DIODE WHEN SAID OPTICAL RADIATION IS ABSORBED WITHIN SAID INTERMEDIATE REGION, (E) A LIGHT EMITTING DIODE ELECTRICALLY ISOLATED FROM BUT OPTICALLY COUPLED TO SAID PHOTOSENSITIVE DIODE FOR GENERATING OPTICAL RADIATION WHICH IS DIRECTED ON SAID PHOTOSENSITIVE DIODE AND HAVING A FIRST REGION OF ONE CONDUCTIVITY TYPE AND A SECOND REGION OF AN OPPOSITE CONDUCTIVITY TYPE CONTIGUOUS TO AND FORMING A RECTIFYING JUNCTION WITH SAID FIRST REGION, (F) SAID LIGHT EMITTING DIODE BEING CHARACTERIZED BY THE GENERATION OF SAID OPTICAL RADIATION WHEN A FORWARD CURRENT IS CAUSED TO FLOW THROUGH THE RECTIFYING JUNCTION THEREOF, (G) SAID OPTICAL RADIATION GENERATED BY SAID LIGHT EMITTING DIODE BEING CHARACTERIZED BY A PHOTON ENERGY GREATER THAN THE BAND GAP ENERGY OF SAID FIRST SEMICONDUCTOR MATERIAL, AND (H) ELECTRICAL CONTACTS TO SAID FIRST AND SAID SECOND REGIONS OF SAID LIGHT EMITTING DIODE CONSTITUTING A PAIR OF INPUT TERMINALS FOR CONDUCTING SAID FORWARD CURRENT.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-02-13 | 1970-08-15 | 1971-02-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-02-13 | 1974-08-15 | 1975-02-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-02-13 | 1978-08-15 | 1979-02-14 | $7700.00 | Window Closed / Lapsed |