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US3145447A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of producing a semiconductor device

Assignee: Siemens and Halske AG
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Filing: 1961-02-01
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Granted: 1964-08-25
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Expires: 1981-02-01
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Abstract

No abstract record available.

Inventors

  • 👤 Rummel Theodor

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-23 12:33
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/12; H; H10; H10D; H10D99/00; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/017; Y10S148/026; Y10S148/118; Y10S148/142; Y10S228/00; Y10S228/903

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 100 words
THE METHOD OF PRODUCING A P-N JUNCTION SEMICONDUCTOR DEVICE, WHICH COMPRISES PLACING A NUMBER OF BODIES OF MONOCRYSTALLINE SEMICONDUCTOR MATERIAL UPON A COMMON METALLIC SUPPORT, HEATING THE BODIES ON SAID SUPPORT BY DIRECTLY HEATING SAID SUPPORT, PYROLYTICALLY PRECIPITATING SEMICONDUCTOR MATERIAL FROM A GASEOUS COMPOUND OF THE SAME SEMICONDUCTOR MATERIAL ON SAID BODIES AND SUPPORT THUS GROWING AT LEAST ONE STRATUM UPON EACH OF SAID BODIES AND SIMULTANEOUSLY BONDING SAID BODIES TO SAID SUPPORT, THEREAFTER SEVERING SAID SUPPORT INTO RESPECTIVE PARTS OF WHICH EACH REMAINS INTEGRAL WITH ONE OF THE THEN SEPARATED SEMICONDUCTOR DEVICES RESPECTIVELY AND FORMS AN ELECTRIC TERMINAL THEREOF.
Claim 2
Independent Claim 100 words
THE METHOD OF PRODUCING A P-N JUNCTION SEMICONDUCTOR DEVICE, WHICH COMPRISES PLACING A NUMBER OF BODIES OF MONOCRYSTALLINE SEMICONDUCTOR MATERIAL UPON A COMMON METALLIC SUPPORT, HEATING THE BODIES ON SAID SUPPORT BY DIRECTLY HEATING SAID SUPPORT, PYROLYTICALLY PRECIPITATING SEMICONDUCTOR MATERIAL FROM A GASEOUS COMPOUND OF THE SAME SEMICONDUCTOR MATERIAL ON SAID BODIES AND SUPPORT THUS GROWING AT LEAST ONE STRATUM UPON EACH OF SAID BODIES AND SIMULTANEOUSLY BONDING SAID BODIES TO SAID SUPPORT, THEREAFTER SEVERING SAID SUPPORT INTO RESPECTIVE PARTS OF WHICH EACH REMAINS INTEGRAL WITH ONE OF THE THEN SEPARATED SEMICONDUCTOR DEVICES RESPECTIVELY AND FORMS AN ELECTRIC TERMINAL THEREOF.

References Cited (Backward Citations)

US2692839A Cited
US2910394A Cited
US2850414A Cited
FR1151572A Cited
DE1029941B Cited
US3030704A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1967-08-25 1968-02-24 1968-08-25 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1971-08-25 1972-02-24 1972-08-25 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1975-08-25 1976-02-24 1976-08-25 $7700.00 Window Closed / Lapsed

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