US2850414A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making single crystal semiconductor elements
Assignee: Individual
•
Filing: 1955-12-21
•
Granted: 1958-09-02
•
Expires: 1975-12-21
Abstract
No abstract record available.
Inventors
- 👤 Enomoto Masamichi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 03:33
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/0617; C23C14/02; C23C14/028; C23C14/58; C23C14/5806; C23C26/00; C23C26/02; C30; C30B; C30B19/00; C30B23/00; C30B23/02; H; H10; H10P; H10P95/00; Y; Y10; Y10S; Y10S252/00; Y10S252/95; Y10S252/951
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
172 words
A METHOD OF PRODUCING A SEMI-CONDUCTOR ELEMENT OF A TRANSISTOR, COMPRISING PREPARING A BASE PLATE HAVING A PLURALITY OF SPACED SMALL RECESSES IN ONE SURFACE OF SAID PLATE, PLACING SAID BASE PLATE, A QUANTITY OF SEMICONDUCTOR MATERIAL AND A QUANTITY OF IMPURITY MATERIAL IN A VACUUM, HEATING SAID SEMI-CONDUCTOR MATERIAL TO EVAPORATE IT, DEPOSITING THE EVAPORATED SEMI-CONDUCTOR MATERIAL IN A FILM ON SAID BASE PLATE, BEATING SAID IMPURITY MATERIAL TO EVAPORATE IT, DEPOSITING THE EVAPORATED IMPURITY MATERIAL IN A FILM ON SAID FILM OF SEMI-CONDUCTOR MATERIAL, REMOVING SAID BASE PLATE HAVING SAID FILMS OF DEPOSITED SEMI-CONDUCTOR MATERIAL AND IMPURITY MATERIAL FROM SAID VACUUM, CUTTING BOTH OF SAID FILMS BETWEEN SAID RECESSES TO FORM A PLURALITY OF ISOLATED AREAS ON SAID PLATE, HEATING SAID PLATE WITH SAID ISOLATED AREAS OF FILMS IN A VACUUM, WHEREBY THE FILMS OF EACH AREA ARE FUSED TOGETHER AND AGGREGATED INTO A SINGLE CRYSTAL ONE IN EACH OF SAID RECESSES, AND CUTTING SAID PLATE INTO SEPARATE UNITS, EACH OF SAID UNITS HAVING SAID SINGLE CRYSTAL IN SAID RECESS.
Claim 2
Independent Claim
172 words
A METHOD OF PRODUCING A SEMI-CONDUCTOR ELEMENT OF A TRANSISTOR, COMPRISING PREPARING A BASE PLATE HAVING A PLURALITY OF SPACED SMALL RECESSES IN ONE SURFACE OF SAID PLATE, PLACING SAID BASE PLATE, A QUANTITY OF SEMICONDUCTOR MATERIAL AND A QUANTITY OF IMPURITY MATERIAL IN A VACUUM, HEATING SAID SEMI-CONDUCTOR MATERIAL TO EVAPORATE IT, DEPOSITING THE EVAPORATED SEMI-CONDUCTOR MATERIAL IN A FILM ON SAID BASE PLATE, BEATING SAID IMPURITY MATERIAL TO EVAPORATE IT, DEPOSITING THE EVAPORATED IMPURITY MATERIAL IN A FILM ON SAID FILM OF SEMI-CONDUCTOR MATERIAL, REMOVING SAID BASE PLATE HAVING SAID FILMS OF DEPOSITED SEMI-CONDUCTOR MATERIAL AND IMPURITY MATERIAL FROM SAID VACUUM, CUTTING BOTH OF SAID FILMS BETWEEN SAID RECESSES TO FORM A PLURALITY OF ISOLATED AREAS ON SAID PLATE, HEATING SAID PLATE WITH SAID ISOLATED AREAS OF FILMS IN A VACUUM, WHEREBY THE FILMS OF EACH AREA ARE FUSED TOGETHER AND AGGREGATED INTO A SINGLE CRYSTAL ONE IN EACH OF SAID RECESSES, AND CUTTING SAID PLATE INTO SEPARATE UNITS, EACH OF SAID UNITS HAVING SAID SINGLE CRYSTAL IN SAID RECESS.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1961-09-01 | 1962-03-03 | 1962-09-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1965-09-01 | 1966-03-03 | 1966-09-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1969-09-01 | 1970-03-03 | 1970-09-02 | $7700.00 | Window Closed / Lapsed |