US5445992A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for forming a silicon carbide film
Assignee: Canon Inc
•
Filing: 1994-05-05
•
Granted: 1995-08-29
•
Expires: 2014-05-05
Abstract
Abstract A semiconductor film having a very high light response of photoconductivity and good electrical characteristics such a wide band gap, for example, a non-monocrystalline silicon carbide film, is formed by decomposition reaction of a silicon-containing raw material gas and a hydrocarbon as a carbon raw material under light irradiation or high frequency, where the carbon raw material gas comprises at least one of tertiary and quaternary carbon atom-containing hydrocarbons of specific chemical formulae, and a semiconductor device using the thus formed semiconductor film is also provided.
Inventors
- 👤 Hiroyuki Tokunaga
- 👤 Tadashi Atoji
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 16:31
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/32; C23C16/325; H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; H10F71/1035; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S438/00; Y10S438/931
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
87 words
A chemical vapor deposition process for forming a semiconductor film containing silicon carbide, which comprises subjecting a silicon-containing raw material gas and a hydrocarbon as a carbon raw material to a decomposition reaction, the carbon raw material comprising at least one member selected from the group consisting of hydrocarbons comprising tertiary or quaternary carbon atom represented by the following general formulae (I) and (II): ##STR5## wherein R 1 to R 4 represent hydrocarbon groups selected from the group consisting of alkyl groups, aryl groups and aromatic groups.
Claim 2
Dependent Claim
87 words
A chemical vapor deposition process for forming a semiconductor film containing silicon carbide, which comprises subjecting a silicon-containing raw material gas and a hydrocarbon as a carbon raw material to a decomposition reaction, the carbon raw material comprising at least one member selected from the group consisting of hydrocarbons comprising tertiary or quaternary carbon atom represented by the following general formulae (I) and (II): ##STR5## wherein R 1 to R 4 represent hydrocarbon groups selected from the group consisting of alkyl groups, aryl groups and aromatic groups.
Claim 3
Dependent Claim
32 words
A process according to claim 1, wherein the decomposition reaction is carried out under at least one form of energy selected from the group consisting of light irradiation, high frequency and heat.
Claim 4
Dependent Claim
25 words
A process according to claim 1, wherein the selected hydrocarbon is a mixture of at least two of the tertiary and quaternary carbon atom-containing hydrocarbons.
Claim 5
Dependent Claim
16 words
A process according to claim 1, wherein the tertiary and quaternary carbon atom-containing hydrocarbons are isobutanes.
Claim 6
Dependent Claim
17 words
A process according to claim 1, wherein the tertiary and quaternary carbon atom-containing hydrocarbons are 2, 2-dimethylpropane.
Claim 7
Dependent Claim
16 words
A process according to claim 1, wherein the tertiary and quaternary carbon atom-containing hydrocarbons are isopentanes.
Claim 8
Dependent Claim
26 words
A process according to claim 1, wherein the tertiary and quaternary carbon atom-containing hydrocarbons take at least 90% by mole of the carbon raw material gas.
Claim 9
Dependent Claim
22 words
A process according to claim 1, wherein the semiconductor film containing the silicon atoms and the carbon atoms comprises non-monocrystalline silicon carbide.
Claim 10
Dependent Claim
15 words
A process according to claim 8, wherein the non-monocrystalline silicon carbide comprises amorphous silicon carbide.
Claim 11
Dependent Claim
21 words
A process according to claim 8, wherein the non-monocrystalline silicon carbide has an optical energy gap of at least 2.0 eV.
Claim 12
Dependent Claim
20 words
A process according to claim 1, wherein a hydrogen gas or an inert gas is used as a dilution gas.
References Cited (Backward Citations)
JPS57103311A
Cited
JPS59172275A
Cited
US4568626A
Cited
US4546008A
Cited
JPS62113482A
Cited
JPS63136514A
Cited
JPH023912A
Cited
US5151296A
Cited
US5011706A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-08-28 | 1999-02-27 | 1999-08-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-08-28 | 2003-02-27 | 2003-08-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-08-28 | 2007-02-27 | 2007-08-29 | $7700.00 | Window Closed / Lapsed |